HW109A

Hall element
SMD Type
High-sensitivity InSb Hall element
HW109A
Unit: mm
■ Features
● High-sensitivity InSb Hall element
● SMT package with sensing area leaned 45°
1. Input(±)
2. Output
3. Input
4. Output(±)
(±)
(±)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Input Current
Rating
Unit
IC
20
mA
Operating Temp. Range
Topr
–40 to +110
℃
Storage Temp. Range
Tstg
–40 to +125
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Output Hall Voltage
Symbol
VH
Test conditions
Const. Voltage Drive B=50mT, Vc=IV
Min
Typ
122
Max
Unit
320
mV
Input Resistance
Rin
B=0mT, Ic=0.1mA
250
450
Ω
Output Resistance
Rout
B=0mT, Ic=0.1mA
250
450
Ω
Offset Voltage
Vos
B=0mT, Vc=IV
Temp. Coefficient of VH
αVH
B=50mT, Ic=5mA
Temp. Coefficient of Rin
αRin
B=0mT, Ic=0.1mA
Dielectric Strength
100V D.C
-7
+7
1.0
V
-1.8
%/℃
-1.8
%/℃
MΩ
Notes : 1. VH = VHM – Vos (VHM:meter indication)
1
V (T ) – V (T )
2. VH = VH (T1) X H (T3 – T H) 2 X 100
3
2
1
3) – Rin (T2)
X 100
3. Rin = Rin (T1) X Rin (T
(T3 – T2)
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
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Hall element
SMD Type
HW109A
■ Classification of Output Hall Voltage (VH)
Rank
VH [ mV ]
A
122 to 150
B
144 to 174
C
168 to 204
D
196 to 236
E
228 to 274
F
266 to 320
Conditions
B=50mT, Vc=IV
Constant Voltage Drive
Note : When ordering, specify 3-rank or wider range(e·g·,BCD).
■ Typical Characteristics
•Input Current Derating Curve
•Input Voltage Derating Curve
Input Resistance
Input Resistance
Rin : 250 to 450
10
0
–60
–40
– 20
0
20
40
60
80
100
Rin : 250 to 450
2.0
Input Voltage(V)
Input Current(mA)
20
1.0
0
–60
120
–40
– 20
Ambient Temperature.(˚C)
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
Rin-T
20
40
60
80
100
120
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
VH-B
2000
600.0
1800
500.0
1600
Output Voltage:VH(mV)
Input Resistance:Rin( )
0
Ambient Temperature.(˚C)
1400
1200
1000
800
600
400
400.0
Ic const
Vc const
Ic = 5 (mA)
Vc = 1 (V)
Ta = 25 (˚C)
Ic
300.0
Vin
200.0
100.0
200
0
-50
0
50
Ambient Temperature(˚C)
100
150
0.0
0
10
20
30
40
50
Magnetic Flux Density B (mT)
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Hall element
SMD Type
HW109A
VH-Vc, VH-Ic
2000
1200
Ic const
Vc const
Output Voltage:VH (mV)
1750
1500
Ic = 5 (mA)
Vc = 1 (V)
B = 50 (mT)
Ic
1250
1000
750
500
250
Output Voltage:VH (mV)
VH-T
Vin
Ic const
Vc const
1000
Ic
B = 50 (mT)
Ta = 25 (˚C)
800
600
Vin
400
200
0
–50
0
50
100
0
0.0
150
5
10
15
20 Ic:(mA)
0.5
1.0
1.5
2.0 Vc:(V)
20 Ic:(mA)
2.0 Vc:(V)
Ic (mA) Input Current
Vc (V) Input Voltage
Ambient Temperature(˚C)
VOS-T
VOS-Vc, VOS-Ic
40
20
30
Ic = 5 (mA)
Vc = 1 (V)
B = 0 (mT)
Ic
20
10
Ic const
Vc const
18
Offset Voltage:Vos(mV)
Offset Voltage:Vos(mV)
Ic const
Vc const
16
Ic
B = 0 (mT)
Ta = 25 (˚C)
14
12
10
8
Vin
6
4
Vin
2
0
–50
0
50
100
150
Ambient Temperature(˚C)
*Magnetic Flux Density
1(mT)=10(G)
0
0.0
5
10
15
0.5
1.0
1.5
Ic (mA) Input Current
Vc (V) Input Voltage
In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V)
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