HW101A

Hall element
SMD Type
High-sensitivity InSb Hall element
HW101A
■ Features
Unit: mm
● High-sensitivity InSb Hall element
2.9±0.1
1.9
0.5
0.5
● Mini-mold SMT package
0.35
0.4
2
1
N
2.9±0.2
1.55±0.1
0 to 0.1
5˚
5˚
3
4
0.1
1. Input(±)
2. Output(±)
3. Input
4. Output
0.8
(±)
1.1
+0.2
–0.1
0.3
3˚
10˚
(±)
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Rating
Unit
IC
20
mA
Operating Temp. Range
Topr
–40 to +110
℃
Storage Temp. Range
Tstg
–40 to +125
℃
Input Current
Note: 1. Part mounted on FR-4 PC board with recommended pad layout
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Output Hall Voltage
VH
Test conditions
Const. Voltage Drive B=50mT, Vc=IV
Min
Typ
122
Max
Unit
370
mV
Input Resistance
Rin
B=0mT, Ic=0.1mA
240
550
Ω
Output Resistance
Rout
B=0mT, Ic=0.1mA
240
550
Ω
Offset Voltage
Vos
B=0mT, Vc=IV
-7
+7
V
Temp. Coefficient of VH
αVH
B=50mT, Ic=5mA
-1.8
%/℃
Temp. Coefficient of Rin
αRin
B=0mT, Ic=0.1mA
-1.8
%/℃
Dielectric Strength
100V D.C
1.0
MΩ
Notes : 1. VH = VHM – Vos (VHM:meter indication)
1
3) – VH (T2)
2. VH = VH (T1) X VH (T
X 100
(T3 – T2)
1
Rin (T3) – Rin (T2)
X 100
3. Rin = R (T1) X
(T – T )
in
3
2
T1 = 20˚C, T2 = 0˚C, T3 = 40˚C
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Hall element
SMD Type
HW101A
Classification of Output Hall Voltage (VH)
Rank
VH [ mV ]
A
122 to 150
B
144 to 174
C
168 to 204
D
196 to 236
E
228 to 274
F
266 to 320
G
310 to 370
Conditions
B=50mT, Vc=IV
Constant Voltage Drive
Note : When ordering, specify 3-rank or wider range(e·g·,BCD).
■ Typlacl Characteristics
•Input Current Derating Curve
Input Resistance
Rin : 240 to 550
10
0
– 40
– 20
0
20
40
60
80
Ambient Temperature.(˚C)
100
1.0
0
120
Note : Rin of Hall element decreases rapidly as ambient temperature
increases. Ensure compliance with input current derating curve envelope,
throughout the operating temperature range.
Rin-T
– 40
– 20
0
20
40
60
80
Ambient Temperature.(˚C)
100
120
Note : For constant-voltage drive, stay within this input voltage derating
curve envelope.
VH-B
2000
600.0
1800
500.0
1600
Output Voltage:VH(mV)
Input Resistance:Rin( )
Input Resistance
Rin : 240 to 550
2.0
Input Voltage(V)
20
Input Current(mA)
•Input Voltage Derating Curve
1400
1200
1000
800
600
400
400.0
Ic const
Vc const
Ic = 5 (mA)
Vc = 1 (V)
Ta = 25 (C)
Ic
300.0
Vc
200.0
100.0
200
0
–50
0
50
100
Ambient Temperature(˚C)
150
0.0
0
10
20
30
Magnetic Flux Density B (mT)
40
50
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Hall element
SMD Type
HW101A
VH-T
VH-Vc, VH-Ic
1200
2000
Output Voltage:VH(mV)
1750
Ic = 5 (mA)
Vc = 1 (V)
B = 50 (mT)
1500
Ic
1250
1000
750
500
Output Voltage:V H(mV)
Ic const
Vc const
Vc
Ic
B = 50 (mT)
Ta = 25 (˚C)
800
600
Vc
400
200
250
0
–50
0
50
100
Ambient Temperature(˚C)
0
0.0
150
VOS-T
5
10
15
0.5
1.0
Ic (mA) Input Current
Vc (V) Input Voltage
1.5
20 Ic:(mA)
2.0 Vc:(V)
VOS-Vc, VOS-Ic
40
20
Ic const
Vc const
Ic = 5 (mA)
Vc = 1 (V)
B = 0 (mT)
30
Ic
20
10
Ic const
Vc const
18
Offset Voltage:Vos(mV)
Offset Voltage:Vos(mV)
Ic const
Vc const
1000
16
Ic
B = 0 (mT)
Ta = 25 (˚C)
14
12
10
8
Vc
6
4
Vc
2
0
–50
0
50
100
Ambient Temperature(˚C)
150
*Magnetic Flux Density
1(mT)=10(G)
0
0.0
5
10
15
20 Ic:(mA)
0.5
1.0
Ic (mA) Input Current
Vc (V) Input Voltage
1.5
2.0 Vc:(V)
In This Example : Rin=350( ), Vos=4.7(mV), Vc=1(V)
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