ETC STYN810

STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
Dim.
Dimensions TO-220AB
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
G
A
K
A
G
K
Dimensions TO-263(D2PAK)
A
G
K
1.
2.
3.
4.
Gate
Collector
Emitter
Collector
Botton Side
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Dim.
Millimeter
Min.
Max.
Inches
Min.
Max.
A
A1
4.06
2.03
4.83
2.79
.160
.080
.190
.110
b
b2
0.51
1.14
0.99
1.40
.020
.045
.039
.055
c
c2
0.46
1.14
0.74
1.40
.018
.045
.029
.055
D
D1
8.64
8.00
9.65
8.89
.340
.315
.380
.350
E
E1
e
9.65
10.29
6.22
8.13
2.54 BSC
L
L1
L2
L3
L4
.380
.405
.245
.320
.100 BSC
14.61
2.29
1.02
1.27
0
15.88
2.79
1.40
1.78
0.20
.575
.090
.040
.050
0
.625
.110
.055
.070
.008
0.46
0.74
.018
.029
R
ABSOLUTE RATINGS (limiting values)
Symbol
Parameter
Value
Unit
RMS on-state current (180° conduction angle)
Tc = 100°C
10
A
IT(AV)
Average on-state current (180° conduction angle)
Tc = 100°C
6.4
A
ITSM
Non repetitive surge peak on-state
current
tp = 8.3 ms
105
tp = 10 ms
100
I²t Value
tp = 10 ms
50
A2S
50
A/µs
- 40 to + 150
- 40 to + 125
°C
IT(RMS)
I ²t
dI/dt
Critical rate of rise of on-state current
Gate supply:IG = 100mA dIG/dt = 1A/µs
Tstg
Tj
Storage junction temperature range
Operating junction temperature range
Tl
A
260
Maximum lead soldering temperature during 10s at 4.5mm from case
°C
TYN
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 125°C
210
410
610
810
1010
200
400
600
800
1000
V
STYN210(S) thru STYN1010(S)
Discrete Thyristors(SCRs)
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified)
■
STANDARD
Symbol
IGT
VGT
VGD
Test Conditions
VD = 12 V
VD = VDRM
RL = 33 W
RL = 3.3 kW
TYNx08(S)
Unit
Tj = 25°C
MAX.
15
mA
Tj = 25°C
MAX.
1.5
V
Tj = 110°C
MIN.
0.2
V
tgt
VD = VDRM IG =40mA dIG/dt = 0.5 A/µs
Tj = 25°C
TYP
2
µs
IH
IT = 100 mA
Tj = 25°C
MAX.
30
mA
IL
IG = 1.2 IGT
Tj = 25°C
TYP
50
mA
Tj = 110°C
MIN.
200
V/µs
Tj = 25°C
MAX.
1.6
V
Tj = 110°C
TYP
70
µs
0.01
mA
mA
Gate open
dV/dt
VD = 67 % VDRM
VTM
ITM = 20 A
Gate open
µs
tp = 380 µs
VD = 67 % VDRM I T M=20A V R =25V
tq
dI T M/dt=30 A/µs dV D /dt=50V /µs
IDRM
VDRM rated
Tj = 25°C
IRRM
VRRM rated
Tj = 110°C
MAX.
2
THERMAL RESISTANCES
Symbol
Parameter
Rth(j-c)
J unction to case (DC)
Rth(j-a)
Junction to ambient (DC)
S =1.0 cm ²
Value
Unit
2.5
°C/W
TO-220AB
60
°C/W
TO-263
45
S= copper surface under tab
PRODUCT SELECTOR
Voltage (xxx)
Part Number
Sensitivity
Package
STYN x10S
200~~1000
15 mA
TO-263
S T Y N x10
200~~1000
15 mA
TO-220AB
OTHER INFORMATION
Part Number
Marking
Weight
Base Quantity
Packing mode
STYN x10S
STYN x10S
1.5 g
50
Tube
S T Y N x10
S T Y N x10
2.3 g
250
B ulk
Note: x = voltage