TN16 and TYNx16 Series ® 16A SCRs STANDARD MAIN FEATURES: A Symbol Value Unit IT(RMS) 16 A VDRM/VRRM 600 to 1000 V IGT 25 mA G K A A K A G DESCRIPTION K 2 The TYN / TN16 SCR Series is suitable for general purpose applications. Using clip assembly technology, they provide a superior performance in surge current capabilities. D PAK (TN16-G) A G TO-220AB (TYN) ABSOLUTE RATINGS (limiting values) Symbol Parameter Value Unit RMS on-state current (180° conduction angle) Tc = 110°C 16 A T(AV) Average on-state current (180° conduction angle) Tc = 110°C 10 A ITSM Non repetitive surge peak on-state current tp = 8.3 ms I²t Value for fusing tp = 10 ms Tj = 25°C 180 A2S dI/dt Critical rate of rise of on-state current IG = 2 x IGT , tr ≤ 100 ns F = 60 Hz Tj = 125°C 50 A/µs IGM Peak gate current tp = 20 µs Tj = 125°C 4 A Tj = 125°C 1 W IT(RMS) I ²t PG(AV) Average gate power dissipation 200 Tj = 25°C tp = 10 ms A 190 Tstg Tj Storage junction temperature range Operating junction temperature range - 40 to + 150 - 40 to + 125 °C VRGM Maximum peak reverse gate voltage 5 V April 2002 - Ed: 4A 1/7 TN16 and TYNx16 Series ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol Test Conditions Value IGT RL = 33 Ω VD = 12 V VGT VGD Tj = 125°C VD = VDRM RL = 3.3 kΩ IH IT = 500 mA Gate open IL IG = 1.2 x IGT Unit MIN. 2 MAX. 25 MAX. 1.3 V MIN. 0.2 V MAX. 40 mA MAX. 60 mA mA dV/dt VD = 67 % VDRM Gate open Tj = 125°C MIN. 500 V/µs VTM ITM = 32 A Tj = 25°C MAX. 1.6 V Vt0 Threshold voltage Tj = 125°C MAX. 0.77 V Rd Dynamic resistance Tj = 125°C MAX. 23 mΩ Tj = 25°C MAX. 5 µA 2 mA IDRM IRRM tp = 380 µs VDRM = VRRM Tj = 125°C THERMAL RESISTANCES Symbol Parameter Rth(j-c) Junction to case (DC) Rth(j-a) Junction to ambient (DC) TO-220AB S = 1 cm ² ² D PAK Value Unit 1.1 °C/W 60 °C/W 45 S = Copper surface under tab PRODUCT SELECTOR Voltage (xxx) Sensitivity Package X 25 mA D²PAK X 25 mA TO-220AB Part Number 600 V 800 V 1000 V TN1625-xxxG X X TYNx16 X X 2/7 TN16 and TYNx16 Series ORDERING INFORMATION TN 16 25 - 600 G (-TR) STANDARD SCR SERIES CURRENT: 16A SENSITIVITY: 25: 25mA TYN STANDARD SCR SERIES 6 VOLTAGE: 600: 600V 800: 800V 1000: 1000V 16 PACKAGE: 2 G: D PAK PACKING MODE: Blank: Tube -TR: Tape & Reel (RG) PACKING MODE Blank: Bulk RG: Tube CURRENT: 16A VOLTAGE: 6: 600V 8: 800V 10: 1000V OTHER INFORMATION Part Number Marking Weight Base Quantity Packing mode TN1625-x00G TN1625x00G 1.5 g 50 Tube TN1625-x00G-TR TN1625x00G 1.5 g 1000 Tape & reel TYNx16 TYNx16 2.3 g 250 Bulk TYNx16RG TYNx16 2.3 g 50 Tube Note: x = voltage 3/7 TN16 and TYNx16 Series Fig. 1: Maximum average power dissipation versus average on-state current. Fig. 2-1: Average and D.C. on-state current versus case temperature. IT(av)(A) P(W) 16 α = 180° 14 12 10 8 6 360° 4 2 0 α IT(av)(A) 0 2 4 6 8 10 12 Fig. 2-2: Average and D.C. on-state current versus ambient temperature (copper surface under tab: S = 1 cm² (for D²PAK). 18 16 14 12 10 8 6 4 2 0 D.C. α =180° Tcase(°C) 0 25 50 75 100 125 Fig. 3: Relative variation of thermal impedance versus pulse duration. K = [Zth/Rth] IT(av)(A) 4.0 1.00 3.5 Zth(j-c) D.C. 3.0 2.5 α = 180° 2.0 0.10 Zth(j-a) 1.5 1.0 0.5 0.0 tp(s) Tamb(°C) 0 25 50 75 100 125 Fig. 4: Relative variation of gate trigger current, holding current and latching current versus junction temperature. 0.01 1E-3 IGT 1.5 IH & IL 0.5 Tj(°C) 4/7 -20 0 20 40 60 80 1E+0 1E+1 1E+2 5E+2 ITSM(A) 2.0 0.0 -40 1E-1 Fig. 5: Surge peak on-state current versus number of cycles. IGT,IH,IL [Tj] / IGR,IH,IL [Tj = 25 °C] 2.5 1.0 1E-2 100 120 140 200 180 160 140 120 100 80 60 40 20 0 tp = 10ms One cycle Non repetitiv e Tj initial = 25 °C Repetitive Tcase = 110 °C Number of cycles 1 10 100 1000 TN16 and TYNx16 Series Fig. 6: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding value of I²t. Fig. 7: values). On-state characteristics (maximum ITM(A) ITSM(A),I 2t(A2s) 200 2000 Tj max.: Vto = 0.77V Rd = 23m Ω Tj initial = 25 °C 1000 100 ITSM Tj = Tjmax. dI/dt limitattion 2 It 100 10 Tj = 25°C VTM(V) tp(ms) 10 0.01 0.10 1.00 10.00 1 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 Fig. 8: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35 µm) (for D²PAK). Rth(j-a) ( °C/W) 80 70 60 50 40 30 20 10 0 S (cm 2) 0 4 8 12 16 20 24 28 32 36 40 5/7 TN16 and TYNx16 Series PACKAGE MECHANICAL DATA D²PAK (Plastic) DIMENSIONS REF. A E Min. C2 L2 D L L3 A1 B2 R C B G A2 2.0 MIN. FLAT ZONE V2 FOOTPRINT DIMENSIONS (in millimeters) D²PAK (Plastic) 16.90 10.30 5.08 1.30 3.70 8.90 6/7 Millimeters A A1 A2 B B2 C C2 D E G L L2 L3 R V2 4.30 2.49 0.03 0.70 1.25 0.45 1.21 8.95 10.00 4.88 15.00 1.27 1.40 Typ. 4.60 2.69 0.23 0.93 1.40 0.40 0° Max. Inches Min. Typ. Max. 0.169 0.181 0.098 0.106 0.001 0.009 0.027 0.037 0.048 0.055 0.60 0.017 0.024 1.36 0.047 0.054 9.35 0.352 0.368 10.28 0.393 0.405 5.28 0.192 0.208 15.85 0.590 0.624 1.40 0.050 0.055 1.75 0.055 0.069 0.016 8° 0° 8° TN16 and TYNx16 Series PACKAGE MECHANICAL DATA TO-220AB (Plastic) DIMENSIONS REF. B b2 Min. L F I A l4 c2 a1 l3 l2 a2 b1 M c1 e Millimeters Inches C A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M Typ. 15.20 Max. Min. Typ. 15.90 0.598 3.75 Max. 0.625 0.147 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 15.80 16.40 16.80 0.622 0.646 0.661 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. 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