INFINEON BTS650P

Data Sheet BTS650P
Smart Highside High Current Power Switch
Features
Reversave
Product Summary
Overvoltage protection
Output clamp
Operating voltage
On-state resistance
Load current (ISO)
Short circuit current limitation
Current sense ratio
• Overload protection
• Current limitation
• Short circuit protection
• Over temperature protection
• Over voltage protection (including load dump)
• Clamp of negative voltage at output
• Fast deenergizing of inductive loads 1)
• Low ohmic inverse current operation
• Reversave (Reverse battery protection)
• Diagnostic feedback with load current sense
• Open load detection via current sense
• Loss of Vbb protection 2)
• Electrostatic discharge (ESD) protection
Vbb(AZ)
62
VON(CL)
42
Vbb(on) 5.0 ... 34
RON
IL(ISO)
IL(SC)
IL : IIS
V
V
V
6.0 mΩ
70
A
130
A
14 000
TO-220-7
Application
• Power switch with current sense diagnostic
feedback for 12 V and 24 V DC grounded loads
• Most suitable for loads with high inrush current
like lamps and motors; all types of resistive and
inductive loads
• Replaces electromechanical relays, fuses and
discrete circuits
7
1
7
1
SMD
Standard
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
4 & Tab
Voltage
source
Voltage
sensor
Overvoltage
Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
3
IN
Logic
ESD
I IN
Limit for
unclamped
ind. loads
Output
Voltage
detection
+ V bb
R bb
OUT
1,2,6,7
IL
Current
Sense
Load
Temperature
sensor

PROFET
I IS
IS
Load GND
5
VIN
V IS
R
IS
Logic GND
1
)
2)
With additional external diode.
Additional external diode required for energized inductive loads (see page 9).
Infineon Technologies AG
Page 1of 16
2003-Oct-01
Data Sheet BTS650P
Pin
Symbol
Function
1
OUT
O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
3
each other especially in high current applications. )
2
OUT
O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
3
IN
I
Input; has an internal pull up; activates the power switch in case of short to
ground
4
Vbb
+
Supply voltage; positive power supply voltage; tab and pin 4 are internally
4
shorted; in high current applications use the tab ).
5
IS
S
Sense Output; Diagnostic feedback; provides a sense current proportional
to the load current; zero current on failure (see Truth Table on page 7)
6
OUT
O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
7
OUT
O
Output; output to the load; pin 1, 2, 6 and 7 must be externally shorted with
each other especially in high current applications. 3)
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (over voltage protection see page 4)
Supply voltage for short circuit protection,
Tj,start =-40 ...+150°C: (see diagram on page 10)
Load current (short circuit current, see page 5)
Load dump protection VLoadDump = VA + Vs, VA = 13.5 V
RI5) = 2 Ω, RL = 0.54 Ω, td = 200 ms,
IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C
Inductive load switch-off energy dissipation, single pulse
Vbb = 12V, Tj,start = 150°C, TC = 150°C const.,
IL = 20 A, ZL = 7.5 mH, 0 Ω, see diagrams on page 10
Electrostatic discharge capability (ESD)
Symbol
Vbb
Vbb
Values
42
34
Unit
V
V
self-limited
A
75
V
Tj
Tstg
Ptot
-40 ...+150
-55 ...+150
170
°C
EAS
1.5
J
4
kV
+15 , -250
+15 , -250
mA
IL
VLoad dump6)
VESD
W
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ
Current through input pin (DC)
Current through current sense status pin (DC)
IIN
IIS
see internal circuit diagrams on page 8 and 9
3)
4)
5)
6)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Otherwise add up to 0.7 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the
tab.
RI = internal resistance of the load dump test pulse generator.
VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
Infineon Technologies AG
Page 2
2003-Oct-01
Data Sheet BTS650P
Thermal Characteristics
Parameter and Conditions
Symbol
7
chip - case: RthJC )
junction - ambient (free air): RthJA
SMD version, device on PCB 8):
Thermal resistance
min
----
Values
typ
max
-- 0.75
60
-33
40
Unit
K/W
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Load Switching Capabilities and Characteristics
On-state resistance (Tab to pins 1,2,6,7, see
measurement circuit page 7)
IL = 20 A, Tj = 25 °C: RON
VIN = 0, IL = 20 A, Tj = 150 °C:
9
IL = 90 A, Tj = 150 °C:
), IL = 20 A, Tj = 150 °C:
Vbb = 6V
Nominal load current 10) (Tab to pins 1, 2, 6, 7)
ISO 10483-1/6.7: VON = 0.5 V, Tc = 85 °C 11)
Nominal load current 10), device on PCB 8)
TA = 85 °C, Tj ≤ 150 °C VON ≤ 0.5 V,
Maximum load current in resistive range
(Tab to pins 1, 2, 6, 7)
VON = 1.8 V, Tc = 25 °C:
see diagram on page 13
VON = 1.8 V, Tc = 150 °C:
12)
Turn-on time
IIN
to 90% VOUT:
to 10% VOUT:
Turn-off time
IIN
RL = 1 Ω , Tj =-40...+150°C
Slew rate on 12) (10 to 30% VOUT )
RL = 1 Ω , TJ = 25 °C
Slew rate off 12) (70 to 40% VOUT )
RL = 1 Ω , TJ = 25 °C
Values
min
typ
max
6.0
10.5
10.7
17
--
mΩ
-55
4.4
7.9
-10
70
IL(NOM)
13.6
17
--
A
IL(Max)
250
150
100
30
-----
--420
110
dV/dton
--
0.7
--
V/µs
-dV/dtoff
--
1.1
--
V/µs
RON(Static)
IL(ISO)
ton
toff
--
Unit
A
A
µs
7)
Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
9)
Decrease of Vbb below 10 V causes slowly a dynamic increase of RON to a higher value of RON(Static). As
long as VbIN > VbIN(u) max, RON increase is less than 10 % per second for TJ < 85 °C.
10)
not subject to production test, specified by design
11)
TJ is about 105°C under these conditions.
12)
See timing diagram on page 14.
)
8
Infineon Technologies AG
Page 3
2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Inverse Load Current Operation
On-state resistance (Pins 1, 2, 6, 7 to pin 4)
VbIN = 12 V, IL = - 20 A
Tj = 25 °C: RON(inv)
see diagram on page 10
Tj = 150 °C:
Nominal inverse load current (Pins 1, 2, 6, 7 to Tab)
IL(inv)
11
VON = -0.5 V, Tc = 85 °C
-VON
Drain-source diode voltage (Vout > Vbb)
IL = - 20 A, IIN = 0, Tj = +150°C
Values
min
typ
max
--
Unit
6.0
10.5
--
mΩ
55
4.4
7.9
70
--
0.6
--
V
Vbb(on)
VbIN(u)
5.0
1.5
-3.0
34
4.5
V
V
VbIN(ucp)
VZ,IN
3.0
60
62
---
4.5
-66
15
25
6.0
--25
50
V
V
A
Operating Parameters
Operating voltage (VIN = 0V) 13)
14
Under voltage shutdown )
Under voltage start of charge pump
see diagram page 15
Over voltage protection 15)
Tj =-40°C:
Ibb = 15 mA
Tj = 25...+150°C:
Standby current
Tj =-40...+25°C:
IIN = 0
Tj = 150°C:
Ibb(off)
µA
) If the device is turned on before a V -decrease, the operating voltage range is extended down to VbIN(u).
bb
For all voltages 0 ... 34 V the device is fully protected against overtemperature and short circuit.
14)
VbIN = Vbb - VIN see diagram on page 7. When VbIN increases from less than VbIN(u) up to VbIN(ucp) = 5 V
(typ.) the charge pump is not active and VOUT ≈Vbb - 3 V.
15)
See also VON(CL) in circuit diagram on page 9.
13
Infineon Technologies AG
Page 4
2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Protection Functions 16)
Short circuit current limit (Tab to pins 1, 2, 6, 7)
VON = 12 V, time until shutdown max. 350 µs Tc =-40°C:
Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current
positive slope, VON > VON(SC)
--65
110
130
115
td(SC)
80
--
350
µs
14
16.5
20
V
VON(CL)
39
42
47
V
VON(SC)
Tjt
∆Tjt
-150
--
6
-10
----
V
°C
K
--
--
16
V
--
5.4
8.9
7.0
12.3
mΩ
--
120
--
Ω
IL= 40 mA: -VOUT(CL)
-180
--
Unit
IL(SC)
IL(SC)
IL(SC)
min. value valid only if input "off-signal" time exceeds 30 µs
Output clamp 17)
(inductive load switch off)
Values
min
typ
max
A
see diagram Ind. and overvolt. output clamp page 8
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. over voltage)
IL= 40 mA
Short circuit shutdown detection voltage
(pin 4 to pins 1,2,6,7)
Thermal overload trip temperature
Thermal hysteresis
Reverse Battery
Reverse battery voltage 18)
-Vbb
On-state resistance (Pins 1 ,2 ,6 ,7 to pin 4) Tj = 25 °C: RON(rev)
Vbb = -12V, VIN = 0, IL = - 20 A, RIS = 1 kΩ Tj = 150 °C:
Integrated resistor in Vbb line
Rbb
16
) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.
17)
This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, VOUT is clamped to Vbb- VON(CL) at inductive load switch off.
18)
The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as
it is done with all polarity symmetric loads). Note that under off-conditions (IIN = IIS = 0) the power transistor
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.
Infineon Technologies AG
Page 5
2003-Oct-01
Data Sheet BTS650P
Parameter and Conditions
Symbol
at Tj = -40 ... +150 °C, Vbb = 12 V unless otherwise specified
Diagnostic Characteristics
Current sense ratio,
static on-condition,
kILIS = IL : IIS,19
VON < 1.5 V ),
VIS <VOUT - 5V,
VbIN > 4.0 V
see diagram on page 12
IL = 90 A,Tj =-40°C: kILIS
Tj =25°C:
Tj =150°C:
IL = 20 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 10 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IL = 4 A,Tj =-40°C:
Tj =25°C:
Tj =150°C:
IIS=0 by IIN =0 (e.g. during deenergizing of inductive loads):
Values
min
typ
max
Unit
12 500
12 500
11 500
12 500
12 000
11 500
12 500
11 500
11 500
11 000
11 000
11 200
14 200
13 700
13 000
14 500
14 000
13 400
15 000
14 300
13 500
18 000
15 400
14 000
16 000
16 000
14 500
17 500
16 500
15 000
19 000
17 500
15 500
28 500
22 000
19 000
IIS,lim
6.5
--
--
IIN = 0: IIS(LL)
--
--
0.5
VIN = 0, IL ≤ 0: IIS(LH)
Current sense over voltage protection Tj =-40°C: VZ,IS
Tj = 25...+150°C:
Ibb = 15 mA
20)
Current sense settling time
ts(IS)
--
2
65
60
62
--
-66
--
--500
µs
Input
Input and operating current (see diagram page 13) IIN(on)
--
0.8
1.5
mA
--
--
80
µA
Sense current saturation
Current sense leakage current
mA
µA
V
IN grounded (VIN = 0)
Input current for turn-off 21)
IIN(off)
19)
If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see IIS,lim .
20)
not subject to production test, specified by design
21)
We recommend the resistance between IN and GND to be less than 0.5 kΩ for turn-on and more than
500kΩ for turn-off. Consider that when the device is switched off (IIN = 0) the voltage between IN and GND
reaches almost Vbb.
Infineon Technologies AG
Page 6
2003-Oct-01
Data Sheet BTS650P
Truth Table
Input
current
Output
Current
Sense
level
level
L
H
L
H
IIS
0
nominal
H
H
IIS, lim
H
H
0
L
H
L
H
L
H
L
H
L
L
L
L
L
H
H
23
Z )
H
L
0
0
0
0
0
22
<nominal )
0
0
0
L
H
H
H
0
0
Normal
operation
Very high
load current
Currentlimitation
Short circuit to
GND
Over
temperature
Short circuit to
Vbb
Open load
Negative output
voltage clamp
Inverse load
current
Remark
=IL / kilis, up to IIS=IIS,lim
up to VON=VON(Fold back)
IIS no longer proportional to IL
VON > VON(Fold back)
if VON>VON(SC), shutdown will occur
L = "Low" Level; H = "High" Level
Over temperature reset by cooling: Tj < Tjt (see diagram on page 15)
Short circuit to GND: Shutdown remains latched until next reset via input (see diagram on page 14)
Terms
RON measurement layout
I bb
4
VbIN
l ≤
5.5mm
VON
Vbb
IL
V
3
bb
IN
RIN
V
OUT
PROFET
IS
5
IN
I IN
1,2,6,7
VbIS
V IS
I IS
Vbb force
Out Force Sense
contacts
contacts
(both out
pins parallel)
VOUT
DS
R IS
Typical RON for SMD version is about 0.2 mΩ less
than straight leads due to l ≈ 2 mm
Two or more devices can easily be connected in
parallel to increase load current capability.
) Low ohmic short to Vbb may reduce the output current IL and can thus be detected via the sense current IIS.
) Power Transistor "OFF", potential defined by external impedance.
22
23
Infineon Technologies AG
Page 7
2003-Oct-01
Data Sheet BTS650P
Current sense status output
Input circuit (ESD protection)
V bb
ZD
V
Vbb
R bb
V
Z,IS
ZD
R bb
Z,IN
V bIN
IS
IIS
IN
I
R
IN
V IN
When the device is switched off (IIN = 0) the voltage
between IN and GND reaches almost Vbb. Use a
mechanical switch, a bipolar or MOS transistor with
appropriate breakdown voltage as driver.
VZ,IN = 66 V (typ).
VIS
IS
VZ,IS = 66 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
driven only by the internal circuit as long as Vout - VIS >
5 V. If you want measure load currents up to IL(M), RIS
Vbb - 5 V
.
should be less than
IL(M) / Kilis
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also over voltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Short circuit detection
Fault Condition: VON > VON(SC) (6 V typ.) and t> td(SC)
(80 ...350 µs).
Inductive and over voltage output clamp
+ Vbb
VZ1
+ Vbb
VON
VON
VZG
OUT
OUT
Logic
unit
PROFET
Short circuit
detection
DS
IS
VOUT
VON is clamped to VON(Cl) = 42 V typ. At inductive load
switch-off without DS, VOUT is clamped to VOUT(CL) =
-19 V typ. via VZG. With DS, VOUT is clamped to Vbb VON(CL) via VZ1. Using DS gives faster deenergizing of
the inductive load, but higher peak power dissipation in
the PROFET. In case of a floating ground with a
potential higher than 19V referring to the OUT –
potential the device will switch on, if diode DS is not
used.
Infineon Technologies AG
Page 8
2003-Oct-01
Data Sheet BTS650P
Over voltage protection of logic part
+ Vbb
V
R IN
Z,IN
V
IN
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 72 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
R bb
Z,IS
Vbb disconnect with energized inductive
load
Logic
V OUT
Version a:
PROFET
IS
R IS
V
bb
V
V Z,VIS
RV
IN
bb
PROFET
OUT
Signal GND
Rbb = 120 Ω typ., VZ,IN = VZ,IS = 66 V typ., RIS = 1 kΩ
nominal. Note that when over voltage exceeds 71 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
Reverse battery protection
IS
V ZL
Version b:
- Vbb
R bb
V
IN
Vbb
bb
OUT
R IN
IN
PROFET
OUT
Power
Transistor
Logic
IS
IS
DS
D
RIS
V Zb
RL
RV
Signal GND
Power GND
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
RV ≥ 1 kΩ, RIS = 1 kΩ nominal. Add RIN for reverse
battery protection in applications with Vbb above
16 V18); recommended value:
Version c: Sometimes a necessary voltage clamp is
given by non inductive loads RL connected to the same
switch and eliminates the need of clamping circuit:
1
1
1
0.1A
+
+
=
if DS is not used (or
RIN RIS RV |Vbb| - 12V
1
0.1A
=
if DS is used).
RIN |Vbb| - 12V
To minimize power dissipation at reverse battery
operation, the summarized current into the IN and IS
pin should be about 120mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
proper adjusting the current through RIS and RV.
Infineon Technologies AG
Page 9
V
Vbb
bb
IN
PROFET
RL
OUT
IS
2003-Oct-01
Data Sheet BTS650P
Inverse load current operation
Maximum allowable load inductance for
a single switch off
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
Vbb
V bb
L [µH]
- IL
IN
+
PROFET
OUT
1000000
V OUT +
IS
-
100000
IIS
V IN
V IS
-
R IS
10000
The device is specified for inverse load current
operation (VOUT > Vbb > 0V). The current sense feature
is not available during this kind of operation (IIS = 0).
With IIN = 0 (e.g. input open) only the intrinsic drain
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (VIN = 0), this power dissipation is decreased to the
much lower value RON(INV) * I2 (specifications see page
4).
Note: Temperature protection during inverse load
current operation is not possible!
1000
100
10
1
1A
Inductive load switch-off energy
dissipation
10 A
100 A
IL [A]
E bb
Externally adjustable current limit
E AS
V
ELoad
bb
i L(t)
V bb
IN
PROFET
OUT
IS
I
IN
ZL
RIS
L
{
RL
EL
ER
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by IS*RIS . After a delay time defined by
RV*CV T1 will be reset. The device is turned on again,
the short circuit current is defined by IL(SC) and the
device is shut down after td(SC) with latch function.
Vbb
Energy stored in load inductance:
V bb
2
EL = 1/2·L·I L
IN
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for RL > 0 Ω:
Infineon Technologies AG
OUT
IS
Rload
IN
Signal
ln (1+ |V
PROFET
RV
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
IL· L
EAS=
(V + |VOUT(CL)|)
2·RL bb
1000 A
IL·RL
OUT(CL)|
)
Page 10
T1
Signal
GND
CV
T2
R IS
Power
GND
2003-Oct-01
Data Sheet BTS650P
Options Overview
Type
BTS
6510 550P 555
650P
Over temperature protection with hysteresis
Tj >150 °C, latch function24)
Tj >150 °C, with auto-restart on cooling
Short circuit to GND protection
X
with over temperature shutdown
X
X
X
X
X
X
X
-
-
-
X
X25)
X
25
X )
X
X25)
switches off when VON>6 V typ.
(when first turned on after approx. 180 µs)
Over voltage shutdown
X
Output negative voltage transient limit
to Vbb - VON(CL)
to VOUT = -19 V typ
) Latch except when V -V
bb
OUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT ≠
0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 5). No latch
between turn on and td(SC).
25)
Can be "switched off" by using a diode DS (see page 8) or leaving open the current sense output.
24
Infineon Technologies AG
Page 11
2003-Oct-01
Data Sheet BTS650P
Characteristics
Current sense ratio:
IIS = f(IL), TJ= 25 °C
Current sense versus load current:
IIS = f(IL), TJ= -40 ... +150 °C
7
22000
6
20000
5
18000
max
max
4
16000
min
3
typ
14000
2
12000
1
min
10000
0
0
20
40
60
0
80
20
40
60
80
kILIS
IIS [mA]
IL [A]
IL [A]
Current sense ratio:
KILIS = f(IL),TJ = 150°C
Current sense ratio:
KILIS = f(IL),TJ = -40°C
kilis
22000
30000
28000
20000
26000
18000
24000
22000
16000
max
20000
max
18000
16000
14000
typ
typ
12000
14000
min
12000
min
10000
10000
0
0
20
40
60
IL [A]
Infineon Technologies AG
20
40
60
80
80
kilis
Page 12
IL [A]
2003-Oct-01
Data Sheet BTS650P
Typ. current limitation characteristic
IL = f (VON, Tj )
Typ. input current
IIN = f (VbIN), VbIN = Vbb - VIN
IIN [mA]
IL [A]
450
1.6
400
1.4
350
1.2
300
VON > VON(SC) only for t < td(SC)
(otherwise immediate shutdown)
250
1.0
0.8
200
TJ = 25°C
0.6
150
0.4
100
TJ = 150°C
TJ = - 40°C
50
0.2
0
0 VON(FB) 5
10
15
20
0
0
20
40
60
80
VON [V]
In case of VON > VON(SC) (typ. 6 V) the device will be
switched off by internal short circuit detection.
VbIN [V]
Typ. on-state resistance
RON = f (Vbb, Tj ); IL = 20 A; VIN = 0
RON [mOhm]
14
static
dynamic
12
10
Tj = 150°C
8
85°C
6
25°C
4
-40°C
2
0
0
5
10
15
40
Vbb [V]
Infineon Technologies AG
Page 13
2003-Oct-01
Data Sheet BTS650P
Timing diagrams
Figure 1a: Switching a resistive load,
change of load current in on-condition:
Figure 2c: Switching an inductive load:
IIN
IIN
VOUT
90%
dV/dtoff
VOUT
t on
dV/dton
t off
10%
IL
tslc(IS)
Load 1
IIS
t slc(IS)
IL
Load 2
IIS
tson(IS)
t
t
t soff(IS)
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
Figure 3d: Short circuit:
shut down by short circuit detection, reset by IIN = 0.
Figure 2b: Switching motors and lamps:
IIN
IIN
IL
IL(SCp)
VOUT
td(SC)
IIL
IIS
VOUT>>0
VOUT=0
IIS
t
t
Sense current saturation can occur at very high
inrush currents (see IIS,lim on page 6).
Infineon Technologies AG
Shut down remains latched until next reset via input.
Page 14
2003-Oct-01
Data Sheet BTS650P
Figure 4e: Over temperature
Reset if Tj<Tjt
IIN
IIS
Auto Restart
VOUT
Tj
t
Figure 6f: Under voltage restart of charge pump,
over voltage clamp
VOUT
VIN = 0
VON(CL)
dynamic, short
Undervoltage
not below
VbIN(u)
6
4
IIN = 0
2
V ON(CL)
0
0
VbIN(u)
VbIN(ucp)
Infineon Technologies AG
Page 15
2003-Oct-01
Data Sheet BTS650P
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Package and Ordering Code
All dimensions in mm
Standard: TO-220-7-3
BTS650P
Ordering code
Q67060-S6308-A002
Attention please!
The information herein is given to describe certain
components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not
limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon
Technologies Representatives worldwide (see address list).
Warnings
SMD: TO220-7-180
BTS650P E3180A
T&R:
Ordering code
Q67060-S6308-A004
Due to technical requirements components may contain
dangerous substances. For information on the types in
question please contact your nearest Infineon Technologies
Office.
Infineon Technologies Components may only be used in lifesupport devices or systems with the express written
approval of Infineon Technologies, if a failure of such
components can reasonably be expected to cause the
failure of that life-support device or system, or to affect the
safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the
human body, or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to
assume that the health of the user or other persons may be
endangered.
Footprint:
10.8
9.4
16.15
4.6
0.47
0.8
8.42
Infineon Technologies AG
Page 16
2003-Oct-01