INFINEON BTS443P

PROFET® Data Sheet BTS 443 P
Smart Highside Power Switch
Product Summary
Operating voltage
On-state resistance
Load current (ISO)
Current limitation
Package
Reversave
• Reverse battery protection by self turn on of
power MOSFET
Features
Vbb(on)
5.0 ... 36
RON
IL(ISO)
IL(SCr)
• Short circuit protection
• Current limitation
• Overload protection
• Thermal shutdown
TO-252-5-1
• Overvoltage protection (including load dump)
• Loss of ground protection
• Loss of Vbb protection (with external diode for
charged inductive loads)
• Very low standby current
• Fast demagnetisation of inductive loads
• Electrostatic discharge (ESD) protection
• Optimized static electromagnetic compatibility (EMC)
V
16 mΩ
25
A
65
A
Diagnostic Function
• Proportional load current sense (with defined fault signal during thermal shutdown)
Application
• Power switch with current sense diagnostic feedback for 12V and 24 V DC grounded loads
• All types of resistive, capacitive and inductive loads (no PWM with inductive loads)
• Replaces electromechanical relays, fuses and discrete circuits
General Description
N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load

current sense, integrated in Smart SIPMOS chip on chip technology. Providing embedded protective functions.
3 & Tab
Voltage
source
Voltage
sensor
Overvoltage
Current
Gate
protection
limit
protection
Charge pump
Level shifter
Rectifier
2
IN
Logic
ESD
I IN
Limit for
unclamped
ind. loads
Output
Voltage
detection
+ V bb
R bb
OUT
1, 5
IL
Current
Sense
Load
Temperature
sensor
IS

PROFET
I IS
Load GND
4
VIN
V IS
R
IS
Logic GND
Infineon Technologies AG
Page 1 of 13
2003-Oct-01
Data Sheet BTS 443 P
Pin
Symbol
1
OUT
Function
O
Output to the load. The pin 1 and 5 must be shorted with each
other especially in high current applications!*)
2
IN
I
Input, activates the power switch in case of short to ground
Tab/(3)
Vbb
+
Positive power supply voltage, the tab is shorted to this pin.
4
IS
S
Diagnostic feedback providing a sense current proportional to the load
current; high current on failure (see Truth Table on page 6)
5
OUT
O
Output to the load. The pin 1 and 5 must be shorted with each
other especially in high current applications!*)
*) Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter
Supply voltage (overvoltage protection see page 4)
Supply voltage for full short circuit protection
(see also diagram on page 9)
Tj=-40...150 °C:
Load dump protection VLoadDump = UA + Vs, UA = 13.5 V
RI= 2 Ω, RL= 2.7 Ω, td= 200 ms, IN= low or high
Load current (Short-circuit current, see page 4)
Operating temperature range
Storage temperature range
Power dissipation (DC) TC ≤ 25°C
Inductive load switch-off energy dissipation,
single pulse U=12V, I=10A, L=3mH
Tj=150 °C:
Electrostatic discharge capability (ESD)
(Human Body Model)
acc. ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
Current through input pin (DC)
Current through current sense pin (DC)
Symbol
Vbb
Vbb
Values
36
241)
Unit
V
V
60
V
self-limited
-40 ...+150
-55 ...+150
42
A
°C
0.15
4.0
J
kV
+15, -100
+15, -100
mA
VLoad dump2)
IL
Tj
Tstg
Ptot
EAS
VESD
IIN
IIS
W
see internal circuit diagrams page 7
1)
Short circuit is tested with 100mΩ and 20µH
2)
VLoad dump is set-up without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Infineon Technologies AG
Page 2 of 13
2003-Oct-01
Data Sheet BTS 443 P
Thermal Characteristics
Parameter and Conditions
Thermal resistance
Symbol
chip - case: RthJC3)
junction - ambient (free air): RthJA
SMD version, device on PCB4):
min
----
Values
typ
max
-1.5
80
-45
--
Unit
K/W
Electrical Characteristics
Parameter and Conditions
Symbol
at Tj= -40°C...150°C, Vbb = 12 V unless otherwise specified
Values
min
typ
max
Unit
Load Switching Capabilities and Characteristics
On-state resistance (pin 3 to pin 1,5)
VIN= 0, IL = 5 A
Tj=25 °C: RON
Tj=150 °C:
Output voltage drop limitation at small load
currents (Tab to pin 1,5)
Tj=-40...150 °C:
Nominal load current (Tab to pin 1,5)
ISO Proposal: TC=85°C, VON≤0.5V, Tj≤150°C
SMD 4): TA=85°C, VON≤0.5V, Tj≤150°C
Turn-on time
IIN
to 90% VOUT:
Turn-off time
IIN
to 10% VOUT:
RL = 2,5Ω, Tj=-40...150 °C
Slew rate on
10 to 30% VOUT, RL = 2.5 Ω, Tj=-40...150 °C
Slew rate off
70 to 40% VOUT, RL = 2.5 Ω, Tj=-40...150 °C
3)
4)
VON(NL)
--
13
16
mΩ
--
25
50
31
--
mV
A
IL(ISO)
IL(nom)
ton
toff
21
6.2
25
7.6
---
150
70
---
410
410
µs
dV /dton
0.1
--
1
V/µs
-dV/dtoff
0.1
--
1
V/µs
Thermal resistance RthCH case to heatsink (about 0.5 ... 0.9 K/W with silicone paste) not included!
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb
connection. PCB is vertical without blown air.
Infineon Technologies AG
Page 3 of 13
2003-Oct-01
Data Sheet BTS 443 P
Parameter and Conditions
Symbol
Values
min
typ
max
Vbb(on)
VbIN(u)
Vbb(ucp)
5.0
1.5
3.0
-3.0
4.5
36
4.5
6.0
V
V
V
VZ,IN
61
68
--
V
Tj=-40...+25°C: Ibb(off)
Tj=150°C:
---
2
4
5
8
µA
75
65
65
65
110
110
125
--
A
IL(SCr)
35
35
35
--
VON(CL)
38
42
48
V
Tjt
∆Tjt
150
--
-10
---
°C
K
-Vbb
--
--
20
V
---
-16
25
22
19
32
mΩ
--
200
--
Ω
at Tj= -40°C...150°C, Vbb = 12 V unless otherwise specified
Operating Parameters
Operating voltage (VIN=0V)
Undervoltage shutdown 5)
Undervoltage restart of charge pump (VIN=0V)
Overvoltage protection 6)
Ibb=15 mA
Standby current
IIN=0
Protection Functions 7)
Short circuit current limit (Tab to pin 1,5)
VON=8V, time until limitation max. 300µs
Tj =-40°C:
Tj =25°C:
=+150°C:
Tj
Repetitive short circuit current limit,
Tj = Tjt
Output clamp (inductive load switch off)
at VOUT = Vbb - VON(CL) (e.g. overvoltage)
IL= 40 mA 8)
Thermal overload trip temperature
Thermal hysteresis
IL(SC)
Unit
A
Reverse Battery
Reverse battery voltage
On-state resistance (pin 1,5 to pin 3)
Vbb= - 8V, VIN= 0, IL = -5 A, RIS = 1 kΩ, Tj=25 °C: RON(rev)
Vbb= -12V, VIN= 0, IL = -5 A, RIS = 1 kΩ, Tj=25 °C:
Tj=150 °C:
Integrated resistor in Vbb line
Rbb
5)
6)
7)
8)
VbIN=Vbb-VIN see diagram on page 11.
see also VON(CL) in circuit diagram on page 7.
Integrated protection functions are designed to prevent IC destruction under fault condition described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
for continuous repetitive operation.
see also page 12.
Infineon Technologies AG
Page 4 of 13
2003-Oct-01
Data Sheet BTS 443 P
Diagnostic Characteristics
Current sense ratio, static on-condition
kILIS = IL : IIS
VON<1.5 V, VIS<VOUT- 5 V, VbIN>4.5 V 9)
kILIS
IL = 20A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IL = 5A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IL = 2.5A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IL = 1A, Tj = -40°C:
Tj = +25°C:
Tj = +150°C:
IIN = 0 (e.g. during de-energising of inductive loads):
Sense current under fault conditions;
VDS>1.5V, typ.
Tj= -40...+150°C: IIS,fault
--
7400
7500
7500
6800
7200
7200
6800
6800
6800
6800
6800
6800
-2.5
8200
8300
8300
8200
8300
8300
8200
8500
8500
8100
8600
8600
8600
--
9100
9100
8800
9700
9300
9000
10000
9800
9200
10500
10500
10500
n.a.
--
4
--
mA
0.8
ms
µA
Fault-Sense signal delay after negative input slope tdelay(fault)
Current sense leakage current
IIN = 0: IIS(LL)
--
--
0.5
VIN = 0, IL = 0: IIS(LH)
--
4
12
--
--
400
µs
61
68
--
V
--
0.7
1.2
mA
--
--
50
µA
Current sense settling time to IIS static±10% after
tson(IS)
20 A 10)
positive input slope, IL = 0
Tj= -40...+150°C:
Overvoltage protection
Tj = -40...+150°C: VbIS(Z)
Ibb = 15 mA
Input
Required current capability of input switch
IIN(on)
Tj =-40..+150°C:
Maximum input current for turn-off Tj =-40..+150°C: IIN(off)
9)
If VON is higher, the sense current is no longer proportional to the load current due to sense current
saturation.
10) not subject to production test, specified by design
Infineon Technologies AG
Page 5 of 13
2003-Oct-01
Data Sheet BTS 443 P
Truth Table
Input
Current
level
L
H
L
H
L
H
L
H
L
H
L
H
Normal
operation
Overload
Short circuit to GND
Overtemperature
Short circuit to Vbb
Open load
L = "Low" Level
H = "High" Level
Output
level
L
H
L
H
L
L
L
L
H
H
Z
H
Current
Sense
IIS
0
nominal
0
IISfault
0
IISfault
0
IISfault
0
<nominal11
0
0
Z = high impedance, potential depends on external circuit
Terms
I bb
3
VbIN
VON
Vbb
I
V
IN
2
bb
OUT
PROFET
RIN
V
IN
I
L
1,5
IS
VbIS
4
I IS
V
DS
IN
V
IS
OUT
R IS
Two or more devices can easily be connected in
parallel to increase load current capability.
11)
Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
Infineon Technologies AG
Page 6 of 13
2003-Oct-01
Data Sheet BTS 443 P
Inductive and overvoltage output clamp
Input circuit (ESD protection)
+ Vbb
V bb
V
R bb
ZD
V
VZ1
ON
Z,IN
V bIN
OUT
IN
I
PROFET
IN
VON is clamped to VON(Cl) = 42 V typ.
V IN
ESD-Zener diode: 68 V typ., max 15 mA;
Overvoltage protection of logic part
Current sense output
Normal operation
Vbb
Rbb
+ Vbb
ZD
V
R IN
IS
IIS
V
R
IN
Logic
IS
R
Vbb − 5V
.
I L ( M ) / K ilis
V OUT
PROFET
IS
IS
VZ,IS = 68 V (typ.), RIS = 1 kΩ nominal (or 1 kΩ /n, if n
devices are connected in parallel). IS = IL/kilis can be
only driven by the internal circuit as long as
Vout - VIS > 5V. If you want to measure load currents
up to IL(M), RIS should be less than
R bb
V Z,IN V
Z,IS
Z,IS
IIS,fault
IS
R
V
V
Z,VIS
Signal GND
Rbb = 200 Ω typ., VZ,IN = VZ,IS = 68 V typ., RIS = 1 kΩ
nominal. Note that when overvoltage exceeds 73 V typ.
a voltage above 5V can occur between IS and GND, if
RV, VZ,VIS are not used.
Note: For large values of RIS the voltage VIS can reach
almost Vbb. See also overvoltage protection.
If you don't use the current sense output in your
application, you can leave it open.
Infineon Technologies AG
Page 7 of 13
2003-Oct-01
Data Sheet BTS 443 P
Reversave (Reverse battery protection)
Version b:
-Vbb
V
R bb
Vbb
bb
IN
PROFET
OUT
IN
OUT
R IN
IS
Power
Transistor
Logic
VZb
IS
RL
D
R IS
Note that there is no reverse battery protection when
using a diode without additional Z-diode VZL, VZb.
RV
Signal
Power
RV≥1kΩ, R IS = 1 kΩ nominal. Add RIN for reverse
battery protection in applications with Vbb above 16V;
0.05 A,
1
1
1
recommended value:
+
+
=
RIN RIS RV | V | −12V
bb
To minimise power dissipation at reverse battery
operation, the summarised current into the IN and IS
pin should be about 50mA. The current can be
provided by using a small signal diode D in parallel to
the input switch, by using a MOSFET input switch or by
proper adjusting the current through RIS and RV.
Since the current through Rbb generates additional
heat in the device, this has to be taken into account in
the overall thermal considerations.
Version c:
Sometimes a necessary voltage clamp is given by non
inductive loads RL connected to the same switch and
eliminates the need of clamping circuit:
V
Vbb
bb
IN
PROFET
RL
OUT
IS
Vbb disconnect with energised inductive
load
Provide a current path with load current capability by
using a diode, a Z-diode, or a varistor. (VZL < 73 V or
VZb < 30 V if RIN=0). For higher clamp voltages
currents at IN and IS have to be limited to 250 mA.
Version a:
V
bb
V
IN
bb
PROFET
OUT
IS
VZL
Infineon Technologies AG
Page 8 of 13
2003-Oct-01
Data Sheet BTS 443 P
Maximum allowable load inductance for
a single switch off
Inductive load switch-off energy
dissipation
L = f (IL ); Tj,start = 150°C, Vbb = 12 V, RL = 0 Ω
E bb
E AS
V
L[mH]
ELoad
100
bb
i L(t)
V bb
IN
PROFET
OUT
IS
I
IN
ZL
RIS
EL
L
{
10
ER
RL
1
Energy stored in load inductance:
2
EL = 1/2·L·I L
While demagnetising load inductance, the energy
dissipated in PROFET is
0.1
EAS= Ebb + EL - ER= VON(CL)·iL(t) dt,
with an approximate solution for RL > 0 Ω:
EAS=
IL· L
(V + |VOUT(CL)|)
2·RL bb
ln (1+ |V
IL·RL
OUT(CL)|
)
0.01
0
The device is not suitable for permanent PWM with
inductive loads if active clamping occurs every cycle.
Infineon Technologies AG
Page 9 of 13
25
50
75
100
IL [A]
2003-Oct-01
Data Sheet BTS 443 P
Timing diagrams
Figure 1a: Switching a resistive load,
change of load current in on-condition:
Figure 2a: Switching motors and lamps:
IIN
IIN
VOUT
90%
dV/dtoff
t on
VOUT
dV/dton
t off
10%
IL
tslc(IS)
Load 1
IIS
t slc(IS)
IIL
Load 2
IIS
tson(IS)
t
t soff(IS)
The sense signal is not valid during a settling time
after turn-on/off and after change of load current.
t
Sense current above IIS,fault can occur at very high
inrush currents.
Figure 2b: Switching an inductive load:
Figure 1b: typical behaviour of sense output:
IIN
IS
IIS,fault >= 2.5mA
VOUT
IL(lim) = 20A
IL
IL
IIS
t
Infineon Technologies AG
Page 10 of 13
2003-Oct-01
Data Sheet BTS 443 P
Figure 3a: Short circuit:
Figure 5a: Undervoltage restart of charge pump,
overvoltage clamp
IN
VOUT
12
10
I
VIN = 0
L
8
I
V
L(SCp)
I
6
L(SCr)
4
IIS
ON(CL)
dynamic, short
Undervoltage
not below
VbIN(u)
IIN = 0
2
IISfault
t
VON(CL)
0
0
VbIN(u)
2
4
V6bIN(ucp)8
10
V12
bb
Figure 4a: Overtemperature
Reset if Tj<Tjt
IIN
IIS
VOUT
IIS,fault
Auto Restart
Tj
t
Infineon Technologies AG
Page 11 of 13
2003-Oct-01
Data Sheet BTS 443 P
Figure 7a: Output voltage drop versus load current:
Figure 6a: Current sense versus load current:
[mA]
I IS
VON
[V]
0.1
R
2.0
ON
V
ON(NL)
0.05
1.0
IL
0
0
5
10
15
20
[A]
IL
0.0
0
1
2
3
4
5
6
7 [A] 8
Figure 6b: Current sense ratio12 :
)
kILIS
8200
[A] IL
0
0
12
)
2.5 5
10
20
This range for the current sense ratio refers to all
devices. The accuracy of the kILIS can be raised by
means of calibration the value of kILIS for every
single device.
Infineon Technologies AG
Page 12 of 13
2003-Oct-01
Data Sheet BTS 443 P
Package and Ordering Code
All dimensions in mm
D-Pak-5 Pin: TO-252-5-1
Sales Code
BTS443P
Ordering code
Q67060-S7404-A 2
2.3 +0.05
-0.10
B
5.4 ±0.1
1 ±0.1
0...0.15
0.5 +0.08
-0.04
5x0.6 ±0.1
1.14
4.56
0.9 +0.08
-0.04
0.51 min
0.15 max
per side
A
0.8 ±0.15
(4.17)
9.9 ±0.5
6.22 -0.2
1 ±0.1
6.5 +0.15
-0.10
0.1
0.25
M
A B
GPT09161
All metal surfaces tin plated, except area of cut.
Published by
Infineon Technologies AG,
St.-Martin-Strasse 53,
D-81669 München
© Infineon Technologies AG 2001
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval
of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that lifesupport device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems
are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Infineon Technologies AG
Page 13 of 13
2003-Oct-01