Preliminary Data Sheet μPD166020T1F R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 MOS INTEGRATED CIRCUIT 1. Overview 1.1 Description The μPD166020T1F is a single N-channel high-side switch with charge pump, diagnostic feedback with load current sense and embedded protection functions. 1.2 Features • Built-in charge pump • Low on-state resistance • Short circuit protection - Shutdown by over current detection and over load detection • Over temperature protection - Shutdown with auto-restart on cooling • Built-in diagnostic function - Proportional load current sensing - Defined fault signal in case of abnormal load condition • Under voltage lock out • Reverse battery protection by self turn on of N-ch MOSFET • Small multi-chip package: JEDEC 5-pin TO-252 (MSL: 3, profile acc. J-STD-20C) • AEC Qualified 1.3 Applications • Light bulb (to 65 W) switching • Switching of all types of 14 V DC grounded loads, such as LED, inductor, resistor and capacitor • Replacement for fuse and relay 2. Ordering Information Part No. μ PD166020T1F-E1-AY ∗1 Lead plating Sn Packing Tape 2500 p/reel Package 5-pin TO-252 (MP-3ZK) Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.) R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 1 of 23 μPD166020T1F Chapter Title 3. Specification 3.1 Block Diagram 3 & Tab ICC VCC VCC - VIN Internal power supply Charge pump Power supply voltage sense Current detector Dynamic clamp Output voltage sense Current sense Output voltage clamp IIN IN 2 ESD protection VIN Control logic VCC VON 1&5 IL OUT Fault signal output Load IIS IS ESD protection VOUT 4 Temperature Sensor VIS RIS 3.2 Pin Configuration Pin No. 1 2 3/Tab 4 5 Terminal Name OUT IN VCC IS OUT Tab 1 2 3 4 5 Pin Function Terminal Name OUT IN VCC IS Pin function Output to load Activates the output, if it shorted to ground Supply Voltage; tab and pin 3 are internally shorted Sense output, diagnostic feedback R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Recommended connections Pin 1 and Pin 5 must be externally shorted If reverse battery protection feature is used, refer to 3.6.3 Power Dissipation Under Reverse Battery Condition. Connected to battery voltage with small 100 nF capacitor in parallel If current sense and diagnostic feature are not used, connected to GND via resistor Page 2 of 23 μPD166020T1F Chapter Title 3.3 Absolute Maximum Ratings TA = 25°C, unless otherwise specified Parameter VCC Voltage Symbol VCC1 VCC2 Rating 28 42 Unit V V VCC voltage under Load Dump condition VCC Voltage at reverse battery condition −VCC −16 V Load Current (Short circuit current) Power dissipation (DC) IL(SC) Self limited A PD 1.2 W Voltage of IN pin VIN V Voltage of IS pin VIS Inductive load switch-off energy dissipation single pulse EAS1 VCC − 28 VCC + 14 VCC − 28 VCC + 14 50 mJ Maximum allowable energy dissipation at shutdown operation EAS2 105 mJ Channel Temperature Tch Dynamic temperature increase while switching Storage Temperature ESD susceptibility ΔTch −40 to +150 60 °C °C Tstg VESD −55 to +150 2000 °C V HBM 400 V MM V Test Conditions RI = 1 Ω, RL = 1.5 Ω, RIS = 1 kΩ, td = 400 ms RL = 2.2 Ω, 1 min. TA = 85°C, Device on 50 mm x 50 mm x 1.5 mm epoxy PCB 2 FR4 with 6 cm of 70 μm copper area DC At reverse battery condition, t < 1 min. DC At reverse battery condition, t < 1 min. VCC = 12 V, IL = 10 A, Tch,start ≤ 150°C refer to 3.6.8 Inductive Load Switch Off Energy Dissipation for a Single Pulse VCC = 18 V, Tch,star ≤ 150°C, Lsupply = 5 μH, Lshort = 15 μH refer to 3.6.9 Maximum Allowable Switch off Energy (Single Pulse) AEC-Q100-002 std. R = 1.5 kΩ, C = 100 pF AEC-Q100-003 std. R = 0 Ω, C = 200 pF 3.4 Thermal Characteristics Parameter Thermal characteristics Symbol Rth(ch-a) Rth(ch-c) R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 MIN. TYP. 45 MAX. 3.17 Unit °C/W Test Conditions Device on 50 mm x 50mm x 1.5 mm epoxy PCB FR4 with 6 cm2 of 70 μm copper area °C/W Page 3 of 23 μPD166020T1F Chapter Title 3.5 Electrical Characteristics Operation Function Tch = 25°C, VCC = 12 V, unless otherwise specified Parameter Required current capability of Input switch Input current for turn-off Standby Current Symbol IIH IIL ICC(off) MIN. TYP. 1.0 MAX. 2.2 Unit mA 2.5 50 5.0 μA μA 2.5 15.0 μA 10 18 65 Test Conditions Tch = −40 to 150°C RL = 2.2 Ω, Iin = 0 A, Tch = 25°C RL = 2.2 Ω, Iin = 0 A, Tch = −40 to 150°C On State Resistance Ron Output voltage drop limitation at small load current Von(NL) 8 14 30 Turn On Time ton 120 360 μs Turn Off Time toff 250 500 μs Slew rate on *1 dv/dton 0.2 0.8 V/μs 25 to 50 % VOUT, RL = 2.2 Ω, Tch = −40 to 150°C, refer to 3.6.6 Measurement Condition −dv/dtoff 0.2 0.6 V/μs 50 to 25 % VOUT, RL = 2.2 Ω, Tch = −40 to 150°C, refer to 3.6.6 Measurement Condition Slew rate off *1 mΩ mV IL = 7.5 A, Tch = 25°C IL = 7.5 A, Tch = 150°C Tch = −40 to 150°C RL = 2.2 Ω, Tch = −40 to 150°C, refer to 3.6.6 Measurement Condition Note: ∗1. Not tested, specified by design R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 4 of 23 μPD166020T1F Chapter Title Protection Function Tch = 25°C, VCC = 12 V, unless otherwise specified Parameter On-state resistance at reverse battery conditon Symbol MIN. Ron(rev) *1 Short circuit detection current IL6,3(SC) *1 MAX. 9.5 13 Unit mΩ 16 22 mΩ 120 A td(OC) 5 0.9 50 50 45 35 35 35 110 105 95 90 85 80 55 50 45 130 125 110 110 110 110 75 70 65 50 50 45 2.1 td(OC)−ton 0.65 1.6 Von(OvL) 0.65 1 3.2 2.7 20 IL6,6(SC) *1 10 IL12,3(SC) 76 50 IL12,6(SC) *1 40 IL12,12(SC) *1 10 IL18,3(SC) *1 60 IL18,6(SC) *1 50 IL18,12(SC) *1 30 IL18,18(SC) *1 Turn-on check delay after input current positive slope *1 Remaining Turn-on check delay after turn-on time *1 Over load detection voltage Under voltage shutdown TYP. VCIN(CPr) Output clamp voltage (inductive load switch off) Thermal shutdown temperature *1 Thermal hysteresis *1 Von(CL) 3.6 3.2 30 Tth 150 ΔTth Note: 1. Not tested, specified by design 180 160 120 200 170 120 90 3.8 ms Tch = −40°C Tch = 25°C Tch = 150°C Tch = −40°C Tch = 25°C Tch = 150°C Tch = −40°C Tch = 25°C Tch = 150°C Tch = −40°C Tch = 25°C Tch = 150°C Tch = −40°C Tch = 25°C Tch = 150°C Tch = −40°C Tch = 25°C Tch = 150°C Tch = −40°C Tch = 25°C Tch = 150°C Tch = −40°C Tch = 25°C Tch = 150°C Tch = −40°C Tch = 25°C Tch = 150°C Tch = -40 to 150°C VCC − VIN = 6 V, Von = 3 V VCC − VIN = 6 V, Von = 6 V VCC − VIN = 12 V, Von = 3 V VCC − VIN = 12 V, Von = 6 V VCC − VIN = 12 V, Von = 12 V VCC − VIN = 18 V, Von = 3 V VCC − VIN = 18 V, Von = 6 V VCC − VIN = 18 V, Von = 12 V VCC − VIN = 18 V, Von = 18 V ms RL = 2.2 Ω, Tch = −40 to 150°C 1.45 V Tch = −40 to 150°C 4.0 5.5 5.35 4.5 6.3 6.2 34 40 V V V V V V V Tch = −40°C Tch = 25°C Tch = 150°C Tch = −40°C Tch = 25°C Tch = 150°C IL = 40 mA, Tch = −40 to 150°C 175 °C 10 °C VCIN(Uv) Under voltage restart of charge pump 110 Test Conditions Tch = 25°C VCC = −12 V, IL = −7.5 A, Tch = 150°C RIS = 1 kΩ ∗ R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 5 of 23 μPD166020T1F Chapter Title Diagnosis Function Tch = 25°C, VCC = 12 V, unless otherwise specified Parameter Current sense ratio Symbol MIN. TYP. MAX. Unit 8300 8300 8400 7500 8000 8300 7100 7700 8000 5000 5500 9200 9200 9300 9200 9300 9300 10200 10000 9800 12000 11500 11000 10600 10200 11400 10800 10400 13400 12500 12000 21000 17000 6000 11500 0.1 16000 1 μA KILIS Test Conditions KILIS = IL/IIS, IIS < IIS,lim Tch = −40°C IL = 30A Tch = 25°C Tch = 150°C IL = 7.5 A Tch = −40°C Tch = 25°C Tch = 150°C Tch = −40°C IL = 2.5 A Tch = 25°C Tch = 150°C Tch = −40°C IL = 0.5 A Tch = 25°C Tch = 150°C VIN = 0 V, IL = 0 A Sense current offset current IIS,offset Sense current under fault condition IIS,fault 3.5 6.0 12.0 mA Sense current saturation current IIS,lim 3.5 7.0 12.0 mA 2 6 μs Under fault conditions 8 V < VCC − VIS < 12 V, Tch = −40 to 150°C VIS < VOUT − 6 V , Tch = −40 to 150°C Tch = −40 to 150°C 0.1 0.5 μA IIN = 0 A 700 μs 100 μs Tch = −40 to 150°C, IIN = 0 A IIH, RL = 2.2 Ω Tch = −40 to 150°C, IL = 10A 20 A tsdelay(fault) Fault Sense Signal delay *1 after short circuit detection Sense current leakage current IIS(LL) Current sense settling time to IIS(static) after input current positive slope *1 tson(IS) Current sense settling time during on condition *1 Tsic(IS) 50 Note: ∗1. Not tested, specified by design R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 6 of 23 μPD166020T1F Chapter Title 3.6 Feature Description 3.6.1 Driving Circuit The high-side output is turned on, if the input pin is shorted to ground. The input current is below IIH. The high-side output is turned off, if the input pin is open or the input current is below IIL. RCC is 100 Ω TYP. ESD protection diode: 46 V TYP. VCC IIN RCC VZ,IN 0 Logic VOUT ZD IN IIN VCC OFF ON OFF ON 0 t Switching a resistive load Switching lamps IIN IIN 0 0 IL IL 0 0 VOUT VOUT VCC 0 0 IIS IIS 0 R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 t 0 IIS,lim t Page 7 of 23 μPD166020T1F Chapter Title Switching an inductive load IIN VCC 0 IL 0 SW1 IS VOUT ESD Ris Control Logic OUT 0 VON(CL) IIS 0 t Dynamic clamp operation at inductive load switch off The dynamic clamp circuit works only when the inductive load is switched off. When the inductive load is switched off, the voltage of OUT falls below 0 V. The gate voltage of SW1 is then nearly equal to GND because the IS terminal is connected to GND via an external resister. Next, the voltage at the source of SW1 (= gate of output MOS) falls below the GND voltage. SW1 is turned on, and the clamp diode is connected to the gate of the output MOS, activating the dynamic clamp circuit. When the over-voltage is applied to VCC, the gate voltage and source voltage of SW1 are both nearly equal to GND. SW1 is not turned on, the clamp diode is not connected to the gate of the output MOS, and the dynamic clamp circuit is not activated. R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 8 of 23 μPD166020T1F Chapter Title 3.6.2 Short Circuit Protection Case 1:IIN pin is shorted to ground in an overload condition, which includes a short circuit condition. The device shuts down automatically when either or both of following conditions (a, b) is detected. The sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input. (a) IL > IL(SC) (b) Von > Von(OvL) after td(OC) Case 1-(a) IL > IL(SC) Short circuit detection IIN 0 IL(SC) IL (Evaluation circuit) 0 VOUT/VCC VCC VCC VBAT IIN Von OUT IN IIS VON IS VOUT 0 VBAT VIN VIS VOUT RIS IL RL t sdelay(fault) IIS : Cable impedance IIS,fault t 0 tsdelay(fault): Fault sense signal delay after short circuit detection Depending on the external impedance IL(SC): Short circuit detection current Typical Short circuit detection current characteristics The short circuit detection current changes according VCC voltage and Von voltage for the purpose of to be strength of the robustness under short circuit condition. 160 150 Von = 3 V 120 IL(SC) - Load Current - A IL(SC) - Load Current - A 140 100 VCC − VIN = 18 V 80 60 12 V 40 6V 20 120 6V 90 60 12 V 30 0 0 0 5 10 15 Von - Output Voltage - V R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 20 5 10 15 20 VCC − VIN - V Page 9 of 23 μPD166020T1F Chapter Title Case 1-(b) Von > Von(OvL) after td(OC) Short circuit detection IIN 0 (Evaluation circuit) IL IL(SC) 0 VCC IIN VOUT/VCC OUT IN IIS IS VCC Von(OvL) VBAT 0 Von VBAT VIN VIS RL Von VOUT VOUT RIS IL : Cable impedance td(oc) IIS IIS,fault t 0 Depending on the external impedance R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 td(oc):Turn-on check delay after input current positive slope Page 10 of 23 μPD166020T1F Chapter Title Case 2:Short circuit during on-condition The device shuts down automatically when following conditions (a) is detected. The sense current is fixed at IIS,fault. Shutdown is latched until the next reset via input. In the case of Von(NL) works such open load condition at onstate, td(OC) is expired. (a) Von > Von(OvL) after td(OC) Case 2-(a) Von > Von(OvL) after td(OC) Short circuit Short circuit detection VIN 0 IL(SC) (Evaluation circuit) IL 0 VCC VOUT IIN VCC Von OUT IN IIS IS VOUT Von(OvL) VBAT VIN VIS RL 0 VIS VOUT RIS IL : Cable impedance td(OC) IIS,fault 0 t Depending on the external impedance td(oc):Turn-on check delay after input current positive slope IL(SC): Short circuit detection current R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 11 of 23 μPD166020T1F Chapter Title Over-temperature protection The output is switched off if over-temperature is detected. The device switches on again after it cools down. IIN 0 Tch Tth Tth VOUT 0 IIS IIS,fault 0 R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 t Page 12 of 23 μPD166020T1F Chapter Title 3.6.3 Power Dissipation under Reverse Battery Condition In case of reverse battery condition, internal N-ch MOSFET is turned on to reduce the power dissipation by body diode. Additional power is dissipated by the internal resister. Following is the formula for estimation of total power dissipation Pd(rev) in reverse battery condition. PD(rev) = Ron(rev) x IL(rev)2 −VCC + (VCC − Vf − Iin(rev) x RIN) x Iin(rev) IL(rev) + (VCC − Iis(rev) x RIS) x Iis(rev) R CC Iin(rev) = (VCC − 2 x Vf)/(RCC + RIN) Iis(rev) = (VCC − Vf)/(RCC + Ris0 + RIS) Ris0 IN N-ch MOSFET RIN IS The reverse current through the N-ch MOSFET has to be limited by the connected load. OUT RIS RIN < (|VCC - 8 V|)/0.08 A RL IIN(rev) IIS(rev) 3.6.4 Device Behavior at Low Voltage Condition If the supply voltage (VCC – VIN) goes down under VCIN(Uv), the device shuts down the output. If supply voltage (VCC − VIN) increase over VCIN(CPr), the device turns on the output automatically. The device keeps off state if supply voltage (VCC – VIN) does not increase over VCIN(CPr) after under voltage shutdown. It is assumed that VIN = 0 V when IIN is activated. IIN 0 IL 0 VOUT/VCC − VIN VCC − VIN VBAT VOUT VCIN(Uv) VCIN(CPr) 0 Remark t It is assumed that VIN = 0 V when IIN is activated. R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 13 of 23 μPD166020T1F Chapter Title 3.6.5 Current Sense Output VCC VZ,IS RCC RCC and Ris0 are 100 Ω (TYP.). Vz,IS = 46 V (TYP.), RIS = 1 kΩ nominal. ZD IS Iis Ris0 Ris IIS Von IIS,lim Ron KILIS = IL/IIS VIS < Vout - 6 V, IIS < IIS,lim Von(NL) 30 mV TYP. IIS,offset IL IL Current sense ratio 22000 20000 KILIS - Current Sense Ration 18000 16000 14000 T ch = -40°C 12000 10000 150°C 8000 6000 4000 0 5 10 15 20 25 30 35 IL - Load Current - A R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 14 of 23 μPD166020T1F Chapter Title 3.6.6 Measurement Condition Switching waveform of OUT Terminal IIN ton toff 50% dV/dton VOUT 50% −dV/dtoff 25% 25% 10% Switching waveform of IS terminal IIN tson(IS) tSIC(IS) tSIC(IS) IIS 3.6.7 Truth Table Input Current L H State – Normal Operation Over-temperature or Short circuit Open Load R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Output OFF ON OFF ON Sense Current IIS(LL) IL/KILIS IIS,fault IIS,offset Page 15 of 23 μPD166020T1F Chapter Title 3.6.8 Inductive Load Switch Off Energy Dissipation for a Single Pulse MAXIMUM ALLOWABLE LOAD INDUCTANCE for a SINGLE SWITCH OFF IAS - Current Sense Ration - A 100 10 1 0.01 0.1 1 10 IL - Load Current - mH The energy dissipation for an inductive load switch-off single pulse in device (EAS1) is estimated by the following formula as RL = 0 Ω. EAS1 = 1 I2 L 2 Von(CL) Von(CL) − VCC 3.6.9 Maximum Allowable Switch off Energy (Single Pulse) The harness connecting the power supply, the load and the device has a small inductance and resistance. When the device turns off, the energy stored in the harness inductance is dissipated by the device, the harness resistance and the internal resistance of power supply. If the current is abnormally high due to a load short, the energy stored in the harness can be large. This energy has to be taken into consideration for the safe operation. The following figure shows the condition for EAS2, the maximum switch-off energy (single pulse) for abnormally high current. VCC OUT Lsupply Rsupply Lshort IN IS VBAT Rsc RIS RL RSW VBAT = 18 V, Rsupply = 10 mΩ, Rshort = Rsc + RSW(on) = 50 mΩ, Lsupply = 5 μH, Lshort = 15 μH, Tch,start 150°C : Cable resistance : Cable inductance R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 16 of 23 μPD166020T1F Chapter Title 3.7 Package Drawing (unit: mm) 4.0 MIN. (4.4 TYP.) 6.5±0.2 5.0 TYP. 4.3 MIN. 1.0 TYP. 5-pin TO-252 (MP-3ZK) 2.3±0.1 0.5±0.1 1.14 0.6±0.1 0 to 0.25 0.5±0.1 Note No Plating area R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 GAUGE PLANE SEATING PLANE 0.508 1.52±0.12 0.8 1 2 3 4 5 6.1±0.2 10.3 MAX. (9.8 TYP.) 6 Page 17 of 23 μPD166020T1F Chapter Title 3.8 Taping Information This is one type (E1) of direction of the device in the career tape. Draw-out side 3.9 Marking Information This figure indicates the marking items and arrangement. However, details of the letterform, the size and the position aren’t indicated. 6 6 0 2 0 Pb-free plating marking Lot code *1 Internal administrative code Note: *1. Composition of the lot code Week code (2 digit number) Year code (last 1 digit number) R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 18 of 23 μPD166020T1F Chapter Title REQUIRED CURRENT CAPABILITY OF INPUT INPUT CURRENT FOR TURN OFF SWITCH vs. AMBIENT TEMPERATURE vs. AMBIENT TEMPERATURE 500 2.5 IIL - Input current for turn-off - μA IIH - Required current capability of Input switch - mA 4. Typical Characteristics 2 1.5 1 0.5 0 300 200 100 0 -50 0 50 100 150 200 -50 TA - Ambient Temperature - °C 0 100 150 STANDBY CURRENT ON STATE RESISTENCE vs. AMBIENT TEMPERATURE vs. VCC − VIN voltage 200 14 12 12 8 4 -50 0 50 100 150 200 Ron - On-state Resistance - mΩ 16 0 10 8 6 4 2 TA = 25°C 0 0 5 TA - Ambient Temperature - °C 10 15 20 VCC − VIN - V ON STATE RESISTENCE vs. AMBIENT ON STATE RESISTENCE AT REVERSE BATTERY TEMPERATURE CONDITION vs. AMBIENT TEMPERATURE Ron(rev) - On-state resistance at reverse battery conditon - mΩ 14 12 Ron - On-state Resistance - mΩ 50 TA - Ambient Temperature - °C 20 ICC(off) - Standby Current - μA 400 10 8 6 4 2 0 -50 0 50 100 150 200 TA - Ambient Temperature - °C R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 14 12 10 8 6 4 2 0 -50 0 50 100 150 200 TA - Ambient Temperature - °C Page 19 of 23 μPD166020T1F Chapter Title OUTPUT CLAMP VOLTAGE (INDUCTIVE LOAD TURN ON TIME SWITCH OFF) vs. AMBIENT TEMPERATURE vs. AMBIENT TEMPERATURE 42 500 400 VCC − VIN = 6 V 38 ton - Turn On Time - μs (inductive load switch off) - V Von (CL) - Output clamp voltage 40 36 34 32 30 28 300 12 V 18 V 200 100 0 -50 0 50 100 150 200 -50 TA - Ambient Temperature - °C 50 100 150 200 TA - Ambient Temperature - °C TURN OFF TIME SLEW RATE ON vs. AMBIENT TEMPERATURE vs. AMBIENT TEMPERATURE 500 0.6 VCC − VIN = 6 V 400 0.5 12 V dV/dton - Slew rate on - V/μs toff - Turn Off Time - μs 0 300 18 V 200 100 0 -50 0 50 100 150 200 TA - Ambient Temperature - °C 0.4 0.3 0.2 0.1 0 -50 0 50 100 150 200 TA - Ambient Temperature - °C SLEW RATE OFF vs. AMBIENT TEMPERATURE 0.6 −dV/dtoff - Slew rate off - V/μs 0.5 0.4 0.3 0.2 0.1 0 -50 0 50 100 150 200 TA - Ambient Temperature - °C R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 20 of 23 Chapter Title SENSE CURRENT OFFSET CURRENT SENSE CURRENT UNDER FAULT CONDITION vs. AMBIENT TEMPERATURE vs. AMBIENT TEMPERATURE 1 0.8 0.6 0.4 0.2 0 -50 0 50 100 150 200 IIS,fault - Sense current under fault condition - mA IIS,offset - Sense current offset current - μA μPD166020T1F 12 10 8 6 4 2 0 -50 0 100 150 200 TA - Ambient Temperature - °C SENSE CURRENT SATURATION CURRENT SENSE CURRENT LEAKAGE CURRENT vs. AMBIENT TEMPERATURE vs. AMBIENT TEMPERATURE IIS(LL) - Sense current leakage current - μA IIS,lim - Sense current saturation current - mA TA - Ambient Temperature - °C 50 12 10 8 6 4 2 0 -50 0 50 100 150 0.1 0.08 0.06 0.04 0.02 0 -50 0 50 100 150 200 200 TA - Ambient Temperature - °C TA - Ambient Temperature - °C UNDER VOLTAGE RESTART OF CHARGE PUMP vs. AMBIENT TEMPERATURE vs. AMBIENT TEMPERATUR VCIN(Uv) - Under voltage shutdown - V 6 5 4 3 2 1 0 -50 0 50 100 150 TA - Ambient Temperature - °C R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 200 VCIN(CPr) - Under voltage restart of charge pump - V UNDER VOLTAGE SHUTDOWN 6 5 4 3 2 1 0 -50 0 50 100 150 200 TA - Ambient Temperature - °C Page 21 of 23 μPD166020T1F Chapter Title 5. Thermal Characteristics TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH rth(t) - Transient Thermal Resistance - °C/W 1000 Device on 50 mm×50 mm×1.5 mm epoxy PCB FR4 with 6 cm2 of 70 μm copper area Rth(ch-A) = 55°C/W 100 10 Rth(ch-C) = 3.17°C/W 1 0.1 0.001 0.01 0.1 1 10 100 1000 PW - Pulse Width - s R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 22 of 23 μPD166020T1F Chapter Title 6. Application Example in Principle 5V VBAT μPD166020 Micro. VCC IN OUT *1 OUTPUT PORT *2 R R OUT IS Load ADC PORT GND RIS Notes: *1. If output current is over the maximum allowable current for inductive load at a single switch off, or if energy at a single switch off is over EAS1/EAS2, then a free wheeling diode must be connected in parallel the load. *2. If current sense and diagnostic features are not used, IS terminal has to be connected to GND via resistor. R07DS0441EJ0100 Rev.1.00 Aug 15, 2011 Page 23 of 23 μ PD166020T1F Data Sheet Revision History Rev. 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(Note 1) "Renesas Electronics" as used in this document means Renesas Electronics Corporation and also includes its majority-owned subsidiaries. (Note 2) "Renesas Electronics product(s)" means any product developed or manufactured by or for Renesas Electronics. http://www.renesas.com SALES OFFICES Refer to "http://www.renesas.com/" for the latest and detailed information. Renesas Electronics America Inc. 2880 Scott Boulevard Santa Clara, CA 95050-2554, U.S.A. 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