ETC 5962R9563801QQYX

Standard Products
UT69RH051 Radiation-Hardened MicroController
Data Sheet
February 2000
FEATURES
q Three 16-bit timer/counters
- High speed output
- Compare/capture
- Pulse width modulator
- Watchdog timer capabilities
q Flexible clock operation
- 1Hz to 20MHz with external clock
- 2MHz to 20MHz using internal oscillator with external
crystal
q 7 interrupt sources
q Radiation-hardened process and design; total dose irradiation testing MIL-STD-883 Method 1019
- Total dose: 1.0E6 rads(Si)
- Latchup immune
q Programmable serial channel with:
- Framing error detection
- Automatic address recognition
q Packaging options:
- 40-pin 100-mil center DIP (0.600 x 2.00)
- 44-lead 25-mil center Flatpack (0.670 x 0.800)
q 256 bytes of on-chip data RAM
q 32 programmable I/O lines
q TTL and CMOS compatible logic levels
q Standard Microcircuit Drawing 5962-95638 available
- QML Q & V compliant
q 64K external data and program memory space
RAM ADDRESS
REGISTER
q MCS-51 fully compatible instruction set
B
REGISTER
PORT 0
DRIVERS
PORT 0
LATCH
RAM
ACC
TMP2
TMP1
ALE
EA
RST
INSTRUCTION
REGISTER
MICROSEQUENCER
ALU
PSEN
OSC.
XTAL1
PSW
TMP3
PORT 2
DRIVERS
PORT 2
LATCH
PROGRAM
ADDRESS
REGISTER
STACK
POINTER
SPECIAL FUNCTION
REGISTERS,
TIMERS,
PCA,
SERIAL PORT
BUFFER
PC
INCREMENTER
PROGRAM
COUNTER
DPTR
PORT 1
LATCH
PORT 3
LATCH
PORT 1
DRIVERS
PORT 3
DRIVERS
XTAL2
P1.0 - P1.7
Figure 1. UT69RH051 MicroController Block Diagram
P3.0 - P3.7
Table 1. Port 1 Alternate Functions
1.0 INTRODUCTION
The UT69RH051 is a radiation-tolerant 8-bit microcontroller
that is pin equivalent to the MCS-51 industry standard
microcontroller when in a 40-pin DIP. The UT69RH051’s static
design allows operation from 1Hz to 20MHz. This data sheet
describes hardware and software interfaces to the UT69RH051.
Port
Pin
Alternate
Name
P1.0
T2
P1.1
T2EX
P1.2
ECI
P1.3
CEX0
External I/O for PCA capture/
compare Module 0
P1.4
CEX1
External I/O for PCA capture/
compare Module 1
P1.5
CEX2
External I/O for PCA capture/
compare Module 2
P1.6
CEX3
External I/O for PCA capture/
compare Module 3
P1.7
CEX4
External I/O for PCA capture/
compare Module 4
2.0 SIGNAL DESCRIPTION
VDD: +5V Supply voltage
VSS: Circuit Ground
Port 0 (P0.0 - P0.7): Port 0 is an 8-bit port. Port 0 pins are used
as the low-order multiplexed address and data bus during
accesses to external program and data memory. Port 0 pins use
internal pullups when emitting 1’s and are TTL compatible.
Port 1 (P1.0 - P1.7): Port 1 is an 8-bit bidirectional I/O port with
internal pullups. The output buffers can drive TTL loads. When
the Port 1 pins have 1’s written to them, they are pulled high by
the internal pullups and can be used as inputs in this state. As
inputs, any pins that are externally pulled low sources current
because of the pullups. In addition, Port 1 pins have the alternate
uses shown in table 1.
Port 2 (P2.0 - P2.7): Port 2 is an 8-bit port. Port 2 pins are used
as the high-order address bus during accesses to external Program
Memory and during accesses to external Data Memory that uses
16-bit addresses (i.e., MOVX@DPTR). Port 2 uses internal
pullups when emitting 1’s in this mode. During operations that
do not require a 16-bit address, Port 2 emits the contents of the
P2 Special Function Registers (SFR). The pins have internal
pullups and drives TTL loads.
Port 3 (P3.0 - P3.7): Port 3 is an 8-bit bidirectional I/O port with
internal pullups. The output buffers can drive TTL loads. When
the Port 3 pins have 1’s written to them, they are pulled high by
the internal pullups and can be used as inputs in this state. As
inputs, any pins that are externally pulled low sources current
because of the pullups. In addition, Port 3 pins have the alternate
uses shown in table 2.
2
Alternate Function
External clock input to Timer/
Counter 2
Timer/Counter 2 Capture/Reload
trigger and direction control
External count input to PCA
Table 2. Port 3 Alternate Functions
Port
Pin
Alternate
Name
Alternate Function
P3.0
RXD
Serial port input
P3.1
TXD
Serial port output
P3.2
INT0
External interrupt 0
P3.3
INT1
External interrupt 1
P3.4
T0
External clock input for Timer 0
P3.5
T1
External clock input for Timer 1
P3.6
WR
External Data Memory write
strobe
P3.7
RD
External Data Memory read strobe
RST: Reset Input. A high on this input for 24 oscillator periods
while the oscillator is running resets the device. All ports and
SFRs reset to their default conditions. Internal data memory is
undefined after reset. Program execution begins within 12
oscillator periods (one machine cycle) after the RST signal is
brought low. RST contains an internal pulldown resistor to allow
implementing power-up reset with only an external capacitor.
2.1 Hardware/Software Interface
ALE: Address Latch Enable. The ALE output is a pulse for
latching the low byte of the address during accesses to external
memory. In normal operation, the ALE pulse is output every sixth
oscillator cycle and may be used for external timing or clocking.
However, during each access to external Data Memory (MOVX
instruction), one ALE pulse is skipped.
2.1.1.1 Program Memory
There is no internal program memory in the UT69RH051. All
program memory is accessed as external through ports P0 and
P2. The EA pin must be tied to VSS (ground) to enable access to
external locations 0000H through 7FFFH. Following reset, the
UT69RH051 fetches the first instruction at address 0000h.
PSEN: Program Store Enable. This active low signal is the read
strobe to the external program memory. PSEN activates every
sixth oscillator cycle except that two PSEN activations are
skipped during external data memory accesses.
2.1.1.2 Data Memory
The UT69RH051 implements 256 bytes of internal data RAM.
The upper 128 bytes of this RAM occupy a parallel address space
to the SFRs. The CPU determines if the internal access to an
address above 7F H is to the upper 128 bytes of RAM or to the
SFR space by the addressing mode of the instruction. If direct
addressing is used, the access is to the SFR space. If indirect
addressing is used, the access is to the internal RAM. Stack
operations are indirectly addressed so the upper portion of RAM
can be used as stack space. Figure 3 shows the organization of
the internal Data Memory.
EA: External Access Enable. This pin should be strapped to V SS
(Ground) for the UT69RH051.
XTAL1: Input to the inverting oscillator amplifier.
XTAL2: Output from the inverting oscillator amplifier.
2.1.1 Memory
The UT69RH051 has a separate address space for Program and
Data Memory. Internally, the UT69RH051 contains 256 bytes of
Data Memory. It addresses up to 64Kbytes of external Data
Memory and 64Kbytes of external Program Memory.
The first 32 bytes are reserved for four register banks of eight
bytes each. The processor uses one of the four banks as its
working registers depending on the RS1 and RS0 bits in the PSW
SFR. At reset, bank 0 is selected. If four register banks are not
required, use the unused banks as general purpose scratch pad
memory. The next 16 bytes (128 bits) are individually bit
addressable. The remaining bytes are byte addressable and can
be used as general purpose scratch pad memory. For addresses 0
- 7F H, use either direct or indirect addressing. For addresses
larger than 7FH, use only indirect addressing.
In addition to the internal Data Memory, the processor can access
64Kbytes of external Data Memory. The MOVX instruction
accesses external Data Memory.
2.1.2 Special Function Registers
Table 3 contains the SFR memory map. Unoccupied addresses
are not implemented on the device. Read accesses to these
addresses will return unknown values and write accesses will
have no effect.
3
(T2)
(T2EX)
(ECI)
(CEX0)
(CEX1)
(CEX2)
(CEX3)
(CEX4)
(RXD)
(TXD)
(INT0)
(INT1)
(T0)
(T1)
(WR)
(RD)
P1.0
P1.1
P1.2
P1.3
P1.4
P1.5
P1.6
P1.7
RST
P3.0
P3.1
P3.2
P3.3
P3.4
P3.5
P3.6
P3.7
XTAL2
XTAL1
VSS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
22
21
VDD
P0.0
P0.1
P0.2
P0.3
P0.4
P0.5
P0.6
P0.7
EA
ALE
PSEN
P2.7
P2.6
P2.5
P2.4
P2.3
P2.2
P2.1
P2.0
(AD0)
(AD1)
(AD2)
(AD3)
(AD4)
(AD5)
(AD6)
(AD7)
(A15)
(A14)
(A13)
(A12)
(A11)
(A10)
(A9)
(A8)
Figure 2a. UT69RH051 40-Pin DIP Connections
(T2)
(T2EX)
(ECI)
(CEX0)
(CEX1)
(CEX2)
(CEX3)
(CEX4)
(RXD)
(TXD)
(INTO)
(INT1)
(TO)
(T1)
(WR)
(RD)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
VSS
P1.0
P1.1
NC
P1.2
P1.3
P1.4
P1.5
P1.6
P1.7
RST
P3.0
P3.1
P3.2
P3.3
P3.4
P3.5
P3.6
P3.7
XTAL2
XTAL1
VSS
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
VDD
P0.0
P0.1
P0.2
P0.3
P0.4
P0.5
P0.6
P0.7
EA
ALE
PSEN
P2.7
P2.6
P2.5
P2.4
P2.3
P2.2
P2.1
P2.0
NC
VDD
(AD0)
(AD1)
(AD2)
(AD3)
(AD4)
(AD5)
(AD6)
(AD7)
(A15)
(A14)
(A13)
(A12)
(A11)
(A10)
(A9)
(A8)
Figure 2b. UT69RH051 44-Pin Flatpack Connections
4
8 BYTES
INDIRECT
ACCESS
ONLY
F8
FF
F0
F7
•
•
•
•
•
•
88
8F
80
87
78
7F
70
77
•
•
•
DIRECT OR
INDIRECT
ACCESS
SCRATCH
PAD AREA
•
•
•
38
3F
30
37
28
2F
20
27
18
1F
10
17
08
0F
00
07
BIT
ADDRESSABLE
SEGMENT
REGISTER
BANKS
Figure 3. Internal Data Memory Organization
2.1.3 Reset
The reset input is the RST pin. To reset, hold the RST pin high
for a minimum of 24 oscillator periods while the oscillator is
running. The CPU generates an internal reset from the external
signal. The port pins are driven to the reset state as soon as a valid
high is detected on the RST pin.
5
While RST is high, PSEN and the port pins are pulled high; ALE
is pulled low. All SFRs are reset to their reset values as shown
in table 3. The internal Data Memory content is indeterminate.
The processor will begin operation one machine cycle after the
RST line is brought low. A memory access occurs immediately
after the RST line is brought low, but the data is not brought into
the processor. The memory access repeats on the next machine
cycle and actual processing begins at that time.
Table 3. SFR Memory Registers
F8
F0
CH
00000000
CCAP0H
CCAP1H
CCAP2H
CCAP3H
CCAP4H
XXXXXXXX XXXXXXXX XXXXXXXX XXXXXXXX XXXXXXXX
FF
B
00000000
E8
F7
CL
00000000
E0
ACC
00000000
D8
CCON
00X00000
D0
PSW
00000000
C8
T2CON
00000000
CCAP0L
CCAP1L
CCAP2L
CCAP3L
CCAP4L
XXXXXXXX XXXXXXXX XXXXXXXX XXXXXXXX XXXXXXXX
EF
E7
CMOD
OOXXX000
CCAPM0
X00000000
CCAPM1
X00000000
CCAPM2
X00000000
CCAPM3
X00000000
CCAPM4
X00000000
DF
D7
T2MOD
XXXXXX00
RCAP2L
00000000
RCAP2H
00000000
TL2
00000000
TH2
00000000
CF
C0
C7
B8
IP
X0000000
SADEN
00000000
BF
B0
P3
11111111
A8
IE
00000000
A0
P2
11111111
98
SCON
00000000
90
P1
11111111
88
TCON
00000000
TMOD
00000000
TL0
00000000
TL1
00000000
80
P0
11111111
SP
00000111
DPL
00000000
DPH
00000000
IPH
X00000000
SADDR
00000000
B7
AF
A7
SBUF
XXXXXXXX
9F
97
Notes:
1. Values shown are the reset values of the registers.
2. X = undefined.
6
TH0
00000000
TH1
00000000
8F
PCON
00XX00XX
87
3.0 RADIATION HARDNESS
The UT69RH051 incorporates special design and layout features
which allow operation in high-level radiation environments.
UTMC has developed special low-temperature processing
techniques designed to enhance the total-dose radiation hardness
of both the gate oxide and the field oxide while maintaining the
circuit density and reliability. For transient radiation hardness
and latchup immunity, UTMC builds all radiation-hardened
products on epitaxial wafers using an advanced twin-tub CMOS
process. In addition, UTMC pays special attention to power and
ground distribution during the design phase, minimizing doserate upset caused by rail collapse.
RADIATION HARDNESS DESIGN SPECIFICATIONS 1
Total Dose
1.0E6
rad(Si)
LET Threshold
14
MeV-cm2/mg
Neutron Fluence
1.0E14
n/cm2
1E-4
cm2/device
1.3E-7
errors/device-day2
LET>128
MeV-cm2/mg
Saturated Cross-Section (1Kx8)
Single Event Upset
Single Event Latchup1
Note:
1. Worst case temperature TA = +125 °C.
2. Adams 90% worst case environment (geosynchronous).
4.0 ABSOLUTE MAXIMUM RATINGS 1
(Referenced to V SS)
SYMBOL
PARAMETER
LIMITS
UNITS
VDD
DC Supply Voltage
-0.5 to 7.0
V
VI/O
Voltage on Any Pin
-0.5 to VDD+0.3V
V
TSTG
Storage Temperature
-65 to +150
°C
PD
Maximum Power Dissipation
750
mW
TJ
Maximum Junction Temperature
175
°C
Thermal Resistance, Junction-to-Case 2
10
°C/W
±10
mA
ΘJC
II
DC Input Current
Notes:
1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device
at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating
conditions for extended periods may affect device reliability.
2. Test per MIL-STD-883, Method 1012.
7
5.0 DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)*
VDD = 5.0V ±10%; TA = -55°C < T C < +125°C)
SYMBOL
PARAMETER
VIL
Low-level Input Voltage
VIH
High-level Input Voltage
(except XTAL, RST)
High-level Input Voltage
(XTAL)
VIH1
VOL
VOL1
VOH
VOH1
IIL
CONDITION
Low-level Output Voltage1
(Ports 1, 2 and 3)
Low-level Output Voltage1,2
(Port 0, ALE, PSEN, PROG)
3
High-level Output Voltage
(Ports 1, 2, and 3
ALE and PSEN)
High-level Output Voltage
(Port 0 in External Bus Mode)
2.0
V
3.85
V
0.45
V
IOL = 3.5mA
1.0
V
IOL = 200µA
0.3
V
IOL = 3.2mA
0.45
V
IOL = 7.0mA
1.0
V
IOH = -10µA
4.2
V
IOH = -30µA
3.8
V
IOH = -60µA
3.0
V
IOH = -200µA
4.2
V
IOH = -3.2mA
3.8
V
IOH = -7.0mA
3.0
V
-50
-65
µA
VIN = 0.0V
VCC = 5.5V
-65
µA
VIN = 0.0V or VCC
±25
±65
µA
VCC = 5.5V
VIN = 0.0V or VCC
±65
µA
ILI
Input Leakage Current
(Port 0)
IDD
V
IOL = 1.6mA
Logical 0 Input Current
(XTAL 1)
CIO
0.8
V
IIL
4
UNIT
0.3
VIN = 0.0V
Input Leakage Current
(XTAL1)
MAXIMUM
IOL = 100µA
Logical 0 Input Current
(Ports 1, 2, and 3)
ILI
MINIMUM
VCC = 5.5V
VCC = 5.5V
Pin Capacitance
@ 1MHZ, 25°C
15
pF
Power Supply Current:
@16MHz
@20 MHz
95
120
mA
Notes:
* Post-radiation performance guaranteed at 25°C per MIL-STD-883.
1. Under steady state (non-transient) conditions, I OL must be limited externally as follows:
Maximum IOL per port pin:
10mA
Maximum IOL per 8-bit portPort 0: 26mA
Ports 1, 2, & 3: 15mA
Maximum total I OL for all output pins: 71mA
If IOL exceeds the test condition, V OL may exceed the related specification. Pins are not guaranteed to sink current greater than the listed test conditions.
2. Capacitive loading on ports 0 and 2 may cause spurious noise pulses to be superimposed on the VOL of ALE and ports 1 and 3. The noise is due to external bus
capacitance discharging into the port 0 and port 2 pins when these pins make 1 to 0 transitions during bus operations. In applications where capacitance loading
exceeds 100 pF, the noise pulse on the ALE may exceed 0.8V. In these cases, it may be desirable to qualify ALE with a schmitt trigger or use an address latch
with a schmitt trigger strobe input.
3. Capacitive loading ports 0 and 2 cause the VOH on ALE and PSEN to drop below the VDD-0.3 specification when the address lines are stabilizing.
4. Capacitance measured for initial qualification or design changes which may affect the value.
8
VDD
IDD
VDD
VDD
VDD
P0
RST
EA
(NC)
CLOCK
SIGNAL
XTAL2
XTAL1
VSS
GND
tCLCH = tCHCL = 5ns
Figure 4. IDD Test Condition, Active Mode
All other pins
disconnected
VDD -0.5
0.45V
0.7 VDD
tCHCX
0.2 V DD -0.1
tCHCX
t CHCL
tCLCH
tCLCL
Figure 5. Clock Signal Waveform for IDD Tests in Active and Idle Modes
tCLCH = tCHCL = 5ns
9
6.0 AC CHARACTERISTICS READ CYCLE (Post-Radiation)*
(VDD = 5.0V ±10%; -55°C < TC < +125°C)
SYMBOL
tCLCL
1/tCLCL
PARAMETER
MINIMUM
Clock Period
50
Oscillator Frequency
tLHLL
ALE Pulse Width
tAVLL
MAXIMUM
UNIT
ns
20
MHz
2 tCLCL-40
ns
Address Valid to ALE Low
tCLCL-40
ns
tLLAX1
Address Hold after ALE Low
tCLCL-30
ns
tLLIV
ALE Low to Valid Instruction
tLLPL
ALE Low to PSEN Low
tPLPH
PSEN Pulse Width
tPLIV
PSEN Low to Valid Instruction In
tPXIX1
Input Instruction Hold after PSEN
tPXIZ1
Input Instruction Float after PSEN
tAVIV
Address to Valid Instruction In
tPLAZ1
PSEN Low to Address Float
tRLRH
RD Pulse Width
6 tCLCL-100
ns
tWLWH
WR Pulse Width
6 tCLCL-100
ns
tRLDV
RD Low to Valid Data In
tRHDX1
Data Hold After RD High
tRHDZ1
Data Float After RD High
2 tCLCL-60
ns
tLLDV
ALE Low Valid Data In
8 tCLCL-150
ns
tAVDV
Address to Valid Data In
9 tCLCL-165
ns
tLLWL
ALE Low to RD or WR Low
3 tCLCL-50
3 tCLCL+50
ns
tAVWL
Address Valid to WR Low
4 tCLCL-130
ns
tQVWX
Data Valid Before WR High
tCLCL-33
ns
tWHQX
Data Hold After WR High
tCLCL-33
ns
tQVWH
Data Valid to WR High
7 tCLCL-150
ns
tRLAZ1
RD Low to Address Float
tWHLH
RD or WR High to ALE High
4 tCLCL-100
tCLCL-30
ns
3 tCLCL-45
ns
3 tCLCL-105
0
tCLCL-25
ns
5 tCLCL-105
ns
10
ns
0
tCLCL-40
10
ns
ns
5 tCLCL-165
Note:
* Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019 at 1.0E6 rads(Si).
1. Guaranteed, but not tested.
ns
ns
ns
0
ns
tCLCL+40
ns
tLHLL
ALE
tLLPL
tPLPH
tAVLL
tLLIV
tPLIV
PSEN
tPXIZ
tPLAZ
tPXIX
tLLAX
PORT 0
INSTR IN
A0 - A7
A0 - A7
tAVIV
A8 - A15
PORT 2
A8 - A15
Figure 6. External Program Memory Read Timing Waveforms
ALE
tLHLL
tWHLH
tLLDV
PSEN
tRLRH
tLLWL
RD
tRLDV
tAVLL
tRHDZ
tLLAX
PORT 0
tRHDX
t RLAZ
A0 -A7 FROM RI OR DPL
DATA IN
A0 - A7 FROM PCL
INSTR IN
tAVWL
tAVDV
P2.0 - P2.7 OR A8 -A15 FROM DPH
PORT 2
A8 - A15 FROM PCH
Figure 7. External Data Memory Read Cycle Waveforms
ALE
tLHLL
tWHLH
PSEN
tLLWL
tWLWH
WR
tQVWX
tAVLL
tLLAX
PORT 0
tWHQX
tQVWH
A0 -A7 FROM RI OR DPL
DATA OUT
A0 - A7 FROM PCL
tAVWL
PORT 2
P2.0 - P2.7 OR A8 -A15 FROM DPH
Figure 8. External Data Memory Write Cycle Waveforms
11
A8 - A15 FROM PCH
INSTR IN
7.0 SERIAL PORT TIMING CHARACTERISTICS
(VDD = 5.0V ±10%; -55°C < T C < +125°C)
SYMBOL
PARAMETER
MINIMUM
MAXIMUM
UNIT
12 tCLCL+10
ns
tXLXL1
Serial Port Clock Period
12 tCLCL-10
tQVXH
Output Data Setup to Clock Rising Edge
10 tCLCL-133
ns
tXHQX
Output Data Hold after Clock Rising Edge
2 tCLCL-70
ns
tXHDX1
Input Data Hold after Clock Rising Edge
0
ns
tXHDV
Clock Rising Edge to Input Data Valid
10 tCLCL-133
ns
Note:
1. Guaranteed, but not tested.
0
1
2
3
4
5
6
7
8
5
6
7
ALE
TXLXL
CLOCK
TXHQX
OUTPUT DATA
TQVXH
0
(WRITE TO SBUF)
1
VALID
3
4
TXHDX
TXHDV
INPUT DATA
2
VALID
VALID
SET TI
VALID
VALID
VALID
VALID
VALID
(CLEAR RI)
SET RI
Figure 9. Serial Port Timing Waveforms
8.0 EXTERNAL CLOCK DRIVE TIMING CHARACTERISTICS
SYMBOL
1/tCLCL
PARAMETER
MINIMUM
Oscillator Frequency
MAXIMUM
UNIT
20
MHz
tCHCX
High Time
16
ns
tCLCX
Low Time
16
ns
tCLCH
Rise Time
20
ns
tCHCL
Fall Time
20
ns
Note:
1. Guaranteed, but not tested.
VDD - 0.5
0.45 V
0.7 VDD
0.2 V DD - 0.1
tCHCX
tCHCX
tCHCL
tCLCH
tCLCL
Figure 10. External Clock Drive Timing Waveforms
12
9.0 PACKAGING
E
0.595+0.010
S2
0.005 MIN. typ.
S1
0.005 MIN. TYP.
e
0.100
D
2.000 +0.025
b
0.018
PIN 1 I.D.
(Geometry OPTIONAL)
C
0.010
L
0.200
0.125
A
0.185 MAX.
TOP VIEW
+0.002
SIDE VIEW
+ 0.002
- 0.001
Notes:
1. All package finishes are per MIL-PRF-38535.
2. Letter designations are for cross-reference MIL-STD-1835.
0.600
END VIEW
Figure 11. 40-pin Side-Brazed DIP
13
C
Notes:
1. All exposed metalized areas to be plated per MIL-PRF-38535.
2. Dimension letters refer to MIL-STD-1835.
Figure 12. 44-Lead Flatpack
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APPENDIX A
Difference Between Industry Standard and UT69RH051
The areas in which the UT69RH051 differs from the industry
standard will be covered in this section. In this discussion,
industry standard will be used generically to refer to all speed
grades including the 20MHz.
1.0 RESET
The UT69RH051 requires the RST input to be held high for at
least 24 oscillator periods to guarantee the reset is completed in
the chip. Also, the port pins are reset asynchronously as soon as
the RST pin is pulled high. On the UT69RH051 all portions of
the chip are reset synchronously when the RST pin is high during
a rising edge of the input clock. When coming out of reset, the
industry standard takes 1 to 2 machine cycles to begin driving
ALE and PSEN immediately after the RST is removed, but the
access during the first machine cycle after reset is ignored by the
processor. The second cycle will repeat the access and processing
will begin.
2.0 POWER SAVING MODES OF OPERATION
2.1 Idle Mode
Idle mode and the corresponding control bit in the PCON SFR
have not been implemented in the UT69RH051. Setting the idle
control bit has no effect.
2.2 Power Down Mode
Power down mode and the corresponding control bit in the PCON
register have not been implemented in the UT69RH051. Setting
the power down control bit has no effect. Also, the Power Off
Flag in the PCON has not been implemented.
3.0 ON CIRCUIT EMULATION
The On Circuit Emulation mode of operation in the industry
standard has not been implemented in the UT69RH051.
4.0 OPERATING CONDITIONS
The operating voltage range for the industry standard is
5V+20%. The operating temperature range is 0°C to 70°C. On
the UT69RH051, the operating voltage range is 5V+10%. The
operating temperature range is -55°C to +125°C.
15
APPENDIX B
Impact of External Program ROM
The 8051 family of microcontrollers, including the industry
standards, use ports 0 and 2 to access external memory. In
implementations with external program memory, these two ports
16
are dedicated to the program ROM interface and can not be used
as Input/Output ports. The UT69RH051 uses external program
ROM, so ports 0 and 2 will not be available for I/O.
ORDERING INFORMATION
UT69RH051 Microcontroller: SMD
5962
* 95638 *
*
*
*
Lead Finish:
(A) = Solder
(C) = Gold
(X) = Optional
Case Outline:
(Q) = 40-pin DIP
(Y) = 44-pin Flatpack
Class Designator:
(Q) = Class Q
(V) = Class V
Device Type
(01) = 8-bit Microcontroller
Drawing Number: 95638
Total Dose:
(H) = 1E6 rads(Si)
(G) = 5E5 rads(Si)
(F) = 3E5 rads(Si)
(R) = 1E5 rads(Si)
Federal Stock Class Designator: No options
Notes:
1. Lead finish (A, C, or X) must be specified.
2. If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold).
3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening.
17
UT69RH051 Microcontroller
UT ****
*** - * *
* *
Total Dose:
( ) = None
Lead Finish:
(A) = Solder
(C) = Gold
(X) = Optional
Screening:
(C) = Mil Temp
(P) = Prototype
Package Type:
(P) = 40-pin DIP
(W) = 44-pin Flatpack
Device Type:
(UT69RH051) =
8-bit Microcontroller
Notes:
1. Lead finish (A,C, or X) must be specified.
2. If an “X” is specified when ordering, then the part marking will match the lead finish and will be either “A” (solder) or “C” (gold).
3. Radiation characteristics are neither tested nor guaranteed and may not be specified.
4. Devices have prototype assembly and are tested at 25°C only. Radiation characteristics are neither tested nor guaranteed and may not be specified.
18