Standard Products UT69RH051 Radiation-Hardened MicroController Data Sheet February 2000 FEATURES q Three 16-bit timer/counters - High speed output - Compare/capture - Pulse width modulator - Watchdog timer capabilities q Flexible clock operation - 1Hz to 20MHz with external clock - 2MHz to 20MHz using internal oscillator with external crystal q 7 interrupt sources q Radiation-hardened process and design; total dose irradiation testing MIL-STD-883 Method 1019 - Total dose: 1.0E6 rads(Si) - Latchup immune q Programmable serial channel with: - Framing error detection - Automatic address recognition q Packaging options: - 40-pin 100-mil center DIP (0.600 x 2.00) - 44-lead 25-mil center Flatpack (0.670 x 0.800) q 256 bytes of on-chip data RAM q 32 programmable I/O lines q TTL and CMOS compatible logic levels q Standard Microcircuit Drawing 5962-95638 available - QML Q & V compliant q 64K external data and program memory space RAM ADDRESS REGISTER q MCS-51 fully compatible instruction set B REGISTER PORT 0 DRIVERS PORT 0 LATCH RAM ACC TMP2 TMP1 ALE EA RST INSTRUCTION REGISTER MICROSEQUENCER ALU PSEN OSC. XTAL1 PSW TMP3 PORT 2 DRIVERS PORT 2 LATCH PROGRAM ADDRESS REGISTER STACK POINTER SPECIAL FUNCTION REGISTERS, TIMERS, PCA, SERIAL PORT BUFFER PC INCREMENTER PROGRAM COUNTER DPTR PORT 1 LATCH PORT 3 LATCH PORT 1 DRIVERS PORT 3 DRIVERS XTAL2 P1.0 - P1.7 Figure 1. UT69RH051 MicroController Block Diagram P3.0 - P3.7 Table 1. Port 1 Alternate Functions 1.0 INTRODUCTION The UT69RH051 is a radiation-tolerant 8-bit microcontroller that is pin equivalent to the MCS-51 industry standard microcontroller when in a 40-pin DIP. The UT69RH051’s static design allows operation from 1Hz to 20MHz. This data sheet describes hardware and software interfaces to the UT69RH051. Port Pin Alternate Name P1.0 T2 P1.1 T2EX P1.2 ECI P1.3 CEX0 External I/O for PCA capture/ compare Module 0 P1.4 CEX1 External I/O for PCA capture/ compare Module 1 P1.5 CEX2 External I/O for PCA capture/ compare Module 2 P1.6 CEX3 External I/O for PCA capture/ compare Module 3 P1.7 CEX4 External I/O for PCA capture/ compare Module 4 2.0 SIGNAL DESCRIPTION VDD: +5V Supply voltage VSS: Circuit Ground Port 0 (P0.0 - P0.7): Port 0 is an 8-bit port. Port 0 pins are used as the low-order multiplexed address and data bus during accesses to external program and data memory. Port 0 pins use internal pullups when emitting 1’s and are TTL compatible. Port 1 (P1.0 - P1.7): Port 1 is an 8-bit bidirectional I/O port with internal pullups. The output buffers can drive TTL loads. When the Port 1 pins have 1’s written to them, they are pulled high by the internal pullups and can be used as inputs in this state. As inputs, any pins that are externally pulled low sources current because of the pullups. In addition, Port 1 pins have the alternate uses shown in table 1. Port 2 (P2.0 - P2.7): Port 2 is an 8-bit port. Port 2 pins are used as the high-order address bus during accesses to external Program Memory and during accesses to external Data Memory that uses 16-bit addresses (i.e., MOVX@DPTR). Port 2 uses internal pullups when emitting 1’s in this mode. During operations that do not require a 16-bit address, Port 2 emits the contents of the P2 Special Function Registers (SFR). The pins have internal pullups and drives TTL loads. Port 3 (P3.0 - P3.7): Port 3 is an 8-bit bidirectional I/O port with internal pullups. The output buffers can drive TTL loads. When the Port 3 pins have 1’s written to them, they are pulled high by the internal pullups and can be used as inputs in this state. As inputs, any pins that are externally pulled low sources current because of the pullups. In addition, Port 3 pins have the alternate uses shown in table 2. 2 Alternate Function External clock input to Timer/ Counter 2 Timer/Counter 2 Capture/Reload trigger and direction control External count input to PCA Table 2. Port 3 Alternate Functions Port Pin Alternate Name Alternate Function P3.0 RXD Serial port input P3.1 TXD Serial port output P3.2 INT0 External interrupt 0 P3.3 INT1 External interrupt 1 P3.4 T0 External clock input for Timer 0 P3.5 T1 External clock input for Timer 1 P3.6 WR External Data Memory write strobe P3.7 RD External Data Memory read strobe RST: Reset Input. A high on this input for 24 oscillator periods while the oscillator is running resets the device. All ports and SFRs reset to their default conditions. Internal data memory is undefined after reset. Program execution begins within 12 oscillator periods (one machine cycle) after the RST signal is brought low. RST contains an internal pulldown resistor to allow implementing power-up reset with only an external capacitor. 2.1 Hardware/Software Interface ALE: Address Latch Enable. The ALE output is a pulse for latching the low byte of the address during accesses to external memory. In normal operation, the ALE pulse is output every sixth oscillator cycle and may be used for external timing or clocking. However, during each access to external Data Memory (MOVX instruction), one ALE pulse is skipped. 2.1.1.1 Program Memory There is no internal program memory in the UT69RH051. All program memory is accessed as external through ports P0 and P2. The EA pin must be tied to VSS (ground) to enable access to external locations 0000H through 7FFFH. Following reset, the UT69RH051 fetches the first instruction at address 0000h. PSEN: Program Store Enable. This active low signal is the read strobe to the external program memory. PSEN activates every sixth oscillator cycle except that two PSEN activations are skipped during external data memory accesses. 2.1.1.2 Data Memory The UT69RH051 implements 256 bytes of internal data RAM. The upper 128 bytes of this RAM occupy a parallel address space to the SFRs. The CPU determines if the internal access to an address above 7F H is to the upper 128 bytes of RAM or to the SFR space by the addressing mode of the instruction. If direct addressing is used, the access is to the SFR space. If indirect addressing is used, the access is to the internal RAM. Stack operations are indirectly addressed so the upper portion of RAM can be used as stack space. Figure 3 shows the organization of the internal Data Memory. EA: External Access Enable. This pin should be strapped to V SS (Ground) for the UT69RH051. XTAL1: Input to the inverting oscillator amplifier. XTAL2: Output from the inverting oscillator amplifier. 2.1.1 Memory The UT69RH051 has a separate address space for Program and Data Memory. Internally, the UT69RH051 contains 256 bytes of Data Memory. It addresses up to 64Kbytes of external Data Memory and 64Kbytes of external Program Memory. The first 32 bytes are reserved for four register banks of eight bytes each. The processor uses one of the four banks as its working registers depending on the RS1 and RS0 bits in the PSW SFR. At reset, bank 0 is selected. If four register banks are not required, use the unused banks as general purpose scratch pad memory. The next 16 bytes (128 bits) are individually bit addressable. The remaining bytes are byte addressable and can be used as general purpose scratch pad memory. For addresses 0 - 7F H, use either direct or indirect addressing. For addresses larger than 7FH, use only indirect addressing. In addition to the internal Data Memory, the processor can access 64Kbytes of external Data Memory. The MOVX instruction accesses external Data Memory. 2.1.2 Special Function Registers Table 3 contains the SFR memory map. Unoccupied addresses are not implemented on the device. Read accesses to these addresses will return unknown values and write accesses will have no effect. 3 (T2) (T2EX) (ECI) (CEX0) (CEX1) (CEX2) (CEX3) (CEX4) (RXD) (TXD) (INT0) (INT1) (T0) (T1) (WR) (RD) P1.0 P1.1 P1.2 P1.3 P1.4 P1.5 P1.6 P1.7 RST P3.0 P3.1 P3.2 P3.3 P3.4 P3.5 P3.6 P3.7 XTAL2 XTAL1 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22 21 VDD P0.0 P0.1 P0.2 P0.3 P0.4 P0.5 P0.6 P0.7 EA ALE PSEN P2.7 P2.6 P2.5 P2.4 P2.3 P2.2 P2.1 P2.0 (AD0) (AD1) (AD2) (AD3) (AD4) (AD5) (AD6) (AD7) (A15) (A14) (A13) (A12) (A11) (A10) (A9) (A8) Figure 2a. UT69RH051 40-Pin DIP Connections (T2) (T2EX) (ECI) (CEX0) (CEX1) (CEX2) (CEX3) (CEX4) (RXD) (TXD) (INTO) (INT1) (TO) (T1) (WR) (RD) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 VSS P1.0 P1.1 NC P1.2 P1.3 P1.4 P1.5 P1.6 P1.7 RST P3.0 P3.1 P3.2 P3.3 P3.4 P3.5 P3.6 P3.7 XTAL2 XTAL1 VSS 44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 VDD P0.0 P0.1 P0.2 P0.3 P0.4 P0.5 P0.6 P0.7 EA ALE PSEN P2.7 P2.6 P2.5 P2.4 P2.3 P2.2 P2.1 P2.0 NC VDD (AD0) (AD1) (AD2) (AD3) (AD4) (AD5) (AD6) (AD7) (A15) (A14) (A13) (A12) (A11) (A10) (A9) (A8) Figure 2b. UT69RH051 44-Pin Flatpack Connections 4 8 BYTES INDIRECT ACCESS ONLY F8 FF F0 F7 • • • • • • 88 8F 80 87 78 7F 70 77 • • • DIRECT OR INDIRECT ACCESS SCRATCH PAD AREA • • • 38 3F 30 37 28 2F 20 27 18 1F 10 17 08 0F 00 07 BIT ADDRESSABLE SEGMENT REGISTER BANKS Figure 3. Internal Data Memory Organization 2.1.3 Reset The reset input is the RST pin. To reset, hold the RST pin high for a minimum of 24 oscillator periods while the oscillator is running. The CPU generates an internal reset from the external signal. The port pins are driven to the reset state as soon as a valid high is detected on the RST pin. 5 While RST is high, PSEN and the port pins are pulled high; ALE is pulled low. All SFRs are reset to their reset values as shown in table 3. The internal Data Memory content is indeterminate. The processor will begin operation one machine cycle after the RST line is brought low. A memory access occurs immediately after the RST line is brought low, but the data is not brought into the processor. The memory access repeats on the next machine cycle and actual processing begins at that time. Table 3. SFR Memory Registers F8 F0 CH 00000000 CCAP0H CCAP1H CCAP2H CCAP3H CCAP4H XXXXXXXX XXXXXXXX XXXXXXXX XXXXXXXX XXXXXXXX FF B 00000000 E8 F7 CL 00000000 E0 ACC 00000000 D8 CCON 00X00000 D0 PSW 00000000 C8 T2CON 00000000 CCAP0L CCAP1L CCAP2L CCAP3L CCAP4L XXXXXXXX XXXXXXXX XXXXXXXX XXXXXXXX XXXXXXXX EF E7 CMOD OOXXX000 CCAPM0 X00000000 CCAPM1 X00000000 CCAPM2 X00000000 CCAPM3 X00000000 CCAPM4 X00000000 DF D7 T2MOD XXXXXX00 RCAP2L 00000000 RCAP2H 00000000 TL2 00000000 TH2 00000000 CF C0 C7 B8 IP X0000000 SADEN 00000000 BF B0 P3 11111111 A8 IE 00000000 A0 P2 11111111 98 SCON 00000000 90 P1 11111111 88 TCON 00000000 TMOD 00000000 TL0 00000000 TL1 00000000 80 P0 11111111 SP 00000111 DPL 00000000 DPH 00000000 IPH X00000000 SADDR 00000000 B7 AF A7 SBUF XXXXXXXX 9F 97 Notes: 1. Values shown are the reset values of the registers. 2. X = undefined. 6 TH0 00000000 TH1 00000000 8F PCON 00XX00XX 87 3.0 RADIATION HARDNESS The UT69RH051 incorporates special design and layout features which allow operation in high-level radiation environments. UTMC has developed special low-temperature processing techniques designed to enhance the total-dose radiation hardness of both the gate oxide and the field oxide while maintaining the circuit density and reliability. For transient radiation hardness and latchup immunity, UTMC builds all radiation-hardened products on epitaxial wafers using an advanced twin-tub CMOS process. In addition, UTMC pays special attention to power and ground distribution during the design phase, minimizing doserate upset caused by rail collapse. RADIATION HARDNESS DESIGN SPECIFICATIONS 1 Total Dose 1.0E6 rad(Si) LET Threshold 14 MeV-cm2/mg Neutron Fluence 1.0E14 n/cm2 1E-4 cm2/device 1.3E-7 errors/device-day2 LET>128 MeV-cm2/mg Saturated Cross-Section (1Kx8) Single Event Upset Single Event Latchup1 Note: 1. Worst case temperature TA = +125 °C. 2. Adams 90% worst case environment (geosynchronous). 4.0 ABSOLUTE MAXIMUM RATINGS 1 (Referenced to V SS) SYMBOL PARAMETER LIMITS UNITS VDD DC Supply Voltage -0.5 to 7.0 V VI/O Voltage on Any Pin -0.5 to VDD+0.3V V TSTG Storage Temperature -65 to +150 °C PD Maximum Power Dissipation 750 mW TJ Maximum Junction Temperature 175 °C Thermal Resistance, Junction-to-Case 2 10 °C/W ±10 mA ΘJC II DC Input Current Notes: 1. Stresses outside the listed absolute maximum ratings may cause permanent damage to the device. This is a stress rating only, and functional operation of the device at these or any other conditions beyond limits indicated in the operational sections of this specification is not recommended. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2. Test per MIL-STD-883, Method 1012. 7 5.0 DC ELECTRICAL CHARACTERISTICS (Pre/Post-Radiation)* VDD = 5.0V ±10%; TA = -55°C < T C < +125°C) SYMBOL PARAMETER VIL Low-level Input Voltage VIH High-level Input Voltage (except XTAL, RST) High-level Input Voltage (XTAL) VIH1 VOL VOL1 VOH VOH1 IIL CONDITION Low-level Output Voltage1 (Ports 1, 2 and 3) Low-level Output Voltage1,2 (Port 0, ALE, PSEN, PROG) 3 High-level Output Voltage (Ports 1, 2, and 3 ALE and PSEN) High-level Output Voltage (Port 0 in External Bus Mode) 2.0 V 3.85 V 0.45 V IOL = 3.5mA 1.0 V IOL = 200µA 0.3 V IOL = 3.2mA 0.45 V IOL = 7.0mA 1.0 V IOH = -10µA 4.2 V IOH = -30µA 3.8 V IOH = -60µA 3.0 V IOH = -200µA 4.2 V IOH = -3.2mA 3.8 V IOH = -7.0mA 3.0 V -50 -65 µA VIN = 0.0V VCC = 5.5V -65 µA VIN = 0.0V or VCC ±25 ±65 µA VCC = 5.5V VIN = 0.0V or VCC ±65 µA ILI Input Leakage Current (Port 0) IDD V IOL = 1.6mA Logical 0 Input Current (XTAL 1) CIO 0.8 V IIL 4 UNIT 0.3 VIN = 0.0V Input Leakage Current (XTAL1) MAXIMUM IOL = 100µA Logical 0 Input Current (Ports 1, 2, and 3) ILI MINIMUM VCC = 5.5V VCC = 5.5V Pin Capacitance @ 1MHZ, 25°C 15 pF Power Supply Current: @16MHz @20 MHz 95 120 mA Notes: * Post-radiation performance guaranteed at 25°C per MIL-STD-883. 1. Under steady state (non-transient) conditions, I OL must be limited externally as follows: Maximum IOL per port pin: 10mA Maximum IOL per 8-bit portPort 0: 26mA Ports 1, 2, & 3: 15mA Maximum total I OL for all output pins: 71mA If IOL exceeds the test condition, V OL may exceed the related specification. Pins are not guaranteed to sink current greater than the listed test conditions. 2. Capacitive loading on ports 0 and 2 may cause spurious noise pulses to be superimposed on the VOL of ALE and ports 1 and 3. The noise is due to external bus capacitance discharging into the port 0 and port 2 pins when these pins make 1 to 0 transitions during bus operations. In applications where capacitance loading exceeds 100 pF, the noise pulse on the ALE may exceed 0.8V. In these cases, it may be desirable to qualify ALE with a schmitt trigger or use an address latch with a schmitt trigger strobe input. 3. Capacitive loading ports 0 and 2 cause the VOH on ALE and PSEN to drop below the VDD-0.3 specification when the address lines are stabilizing. 4. Capacitance measured for initial qualification or design changes which may affect the value. 8 VDD IDD VDD VDD VDD P0 RST EA (NC) CLOCK SIGNAL XTAL2 XTAL1 VSS GND tCLCH = tCHCL = 5ns Figure 4. IDD Test Condition, Active Mode All other pins disconnected VDD -0.5 0.45V 0.7 VDD tCHCX 0.2 V DD -0.1 tCHCX t CHCL tCLCH tCLCL Figure 5. Clock Signal Waveform for IDD Tests in Active and Idle Modes tCLCH = tCHCL = 5ns 9 6.0 AC CHARACTERISTICS READ CYCLE (Post-Radiation)* (VDD = 5.0V ±10%; -55°C < TC < +125°C) SYMBOL tCLCL 1/tCLCL PARAMETER MINIMUM Clock Period 50 Oscillator Frequency tLHLL ALE Pulse Width tAVLL MAXIMUM UNIT ns 20 MHz 2 tCLCL-40 ns Address Valid to ALE Low tCLCL-40 ns tLLAX1 Address Hold after ALE Low tCLCL-30 ns tLLIV ALE Low to Valid Instruction tLLPL ALE Low to PSEN Low tPLPH PSEN Pulse Width tPLIV PSEN Low to Valid Instruction In tPXIX1 Input Instruction Hold after PSEN tPXIZ1 Input Instruction Float after PSEN tAVIV Address to Valid Instruction In tPLAZ1 PSEN Low to Address Float tRLRH RD Pulse Width 6 tCLCL-100 ns tWLWH WR Pulse Width 6 tCLCL-100 ns tRLDV RD Low to Valid Data In tRHDX1 Data Hold After RD High tRHDZ1 Data Float After RD High 2 tCLCL-60 ns tLLDV ALE Low Valid Data In 8 tCLCL-150 ns tAVDV Address to Valid Data In 9 tCLCL-165 ns tLLWL ALE Low to RD or WR Low 3 tCLCL-50 3 tCLCL+50 ns tAVWL Address Valid to WR Low 4 tCLCL-130 ns tQVWX Data Valid Before WR High tCLCL-33 ns tWHQX Data Hold After WR High tCLCL-33 ns tQVWH Data Valid to WR High 7 tCLCL-150 ns tRLAZ1 RD Low to Address Float tWHLH RD or WR High to ALE High 4 tCLCL-100 tCLCL-30 ns 3 tCLCL-45 ns 3 tCLCL-105 0 tCLCL-25 ns 5 tCLCL-105 ns 10 ns 0 tCLCL-40 10 ns ns 5 tCLCL-165 Note: * Post-radiation performance guaranteed at 25 °C per MIL-STD-883 Method 1019 at 1.0E6 rads(Si). 1. Guaranteed, but not tested. ns ns ns 0 ns tCLCL+40 ns tLHLL ALE tLLPL tPLPH tAVLL tLLIV tPLIV PSEN tPXIZ tPLAZ tPXIX tLLAX PORT 0 INSTR IN A0 - A7 A0 - A7 tAVIV A8 - A15 PORT 2 A8 - A15 Figure 6. External Program Memory Read Timing Waveforms ALE tLHLL tWHLH tLLDV PSEN tRLRH tLLWL RD tRLDV tAVLL tRHDZ tLLAX PORT 0 tRHDX t RLAZ A0 -A7 FROM RI OR DPL DATA IN A0 - A7 FROM PCL INSTR IN tAVWL tAVDV P2.0 - P2.7 OR A8 -A15 FROM DPH PORT 2 A8 - A15 FROM PCH Figure 7. External Data Memory Read Cycle Waveforms ALE tLHLL tWHLH PSEN tLLWL tWLWH WR tQVWX tAVLL tLLAX PORT 0 tWHQX tQVWH A0 -A7 FROM RI OR DPL DATA OUT A0 - A7 FROM PCL tAVWL PORT 2 P2.0 - P2.7 OR A8 -A15 FROM DPH Figure 8. External Data Memory Write Cycle Waveforms 11 A8 - A15 FROM PCH INSTR IN 7.0 SERIAL PORT TIMING CHARACTERISTICS (VDD = 5.0V ±10%; -55°C < T C < +125°C) SYMBOL PARAMETER MINIMUM MAXIMUM UNIT 12 tCLCL+10 ns tXLXL1 Serial Port Clock Period 12 tCLCL-10 tQVXH Output Data Setup to Clock Rising Edge 10 tCLCL-133 ns tXHQX Output Data Hold after Clock Rising Edge 2 tCLCL-70 ns tXHDX1 Input Data Hold after Clock Rising Edge 0 ns tXHDV Clock Rising Edge to Input Data Valid 10 tCLCL-133 ns Note: 1. Guaranteed, but not tested. 0 1 2 3 4 5 6 7 8 5 6 7 ALE TXLXL CLOCK TXHQX OUTPUT DATA TQVXH 0 (WRITE TO SBUF) 1 VALID 3 4 TXHDX TXHDV INPUT DATA 2 VALID VALID SET TI VALID VALID VALID VALID VALID (CLEAR RI) SET RI Figure 9. Serial Port Timing Waveforms 8.0 EXTERNAL CLOCK DRIVE TIMING CHARACTERISTICS SYMBOL 1/tCLCL PARAMETER MINIMUM Oscillator Frequency MAXIMUM UNIT 20 MHz tCHCX High Time 16 ns tCLCX Low Time 16 ns tCLCH Rise Time 20 ns tCHCL Fall Time 20 ns Note: 1. Guaranteed, but not tested. VDD - 0.5 0.45 V 0.7 VDD 0.2 V DD - 0.1 tCHCX tCHCX tCHCL tCLCH tCLCL Figure 10. External Clock Drive Timing Waveforms 12 9.0 PACKAGING E 0.595+0.010 S2 0.005 MIN. typ. S1 0.005 MIN. TYP. e 0.100 D 2.000 +0.025 b 0.018 PIN 1 I.D. (Geometry OPTIONAL) C 0.010 L 0.200 0.125 A 0.185 MAX. TOP VIEW +0.002 SIDE VIEW + 0.002 - 0.001 Notes: 1. All package finishes are per MIL-PRF-38535. 2. Letter designations are for cross-reference MIL-STD-1835. 0.600 END VIEW Figure 11. 40-pin Side-Brazed DIP 13 C Notes: 1. All exposed metalized areas to be plated per MIL-PRF-38535. 2. Dimension letters refer to MIL-STD-1835. Figure 12. 44-Lead Flatpack 14 APPENDIX A Difference Between Industry Standard and UT69RH051 The areas in which the UT69RH051 differs from the industry standard will be covered in this section. In this discussion, industry standard will be used generically to refer to all speed grades including the 20MHz. 1.0 RESET The UT69RH051 requires the RST input to be held high for at least 24 oscillator periods to guarantee the reset is completed in the chip. Also, the port pins are reset asynchronously as soon as the RST pin is pulled high. On the UT69RH051 all portions of the chip are reset synchronously when the RST pin is high during a rising edge of the input clock. When coming out of reset, the industry standard takes 1 to 2 machine cycles to begin driving ALE and PSEN immediately after the RST is removed, but the access during the first machine cycle after reset is ignored by the processor. The second cycle will repeat the access and processing will begin. 2.0 POWER SAVING MODES OF OPERATION 2.1 Idle Mode Idle mode and the corresponding control bit in the PCON SFR have not been implemented in the UT69RH051. Setting the idle control bit has no effect. 2.2 Power Down Mode Power down mode and the corresponding control bit in the PCON register have not been implemented in the UT69RH051. Setting the power down control bit has no effect. Also, the Power Off Flag in the PCON has not been implemented. 3.0 ON CIRCUIT EMULATION The On Circuit Emulation mode of operation in the industry standard has not been implemented in the UT69RH051. 4.0 OPERATING CONDITIONS The operating voltage range for the industry standard is 5V+20%. The operating temperature range is 0°C to 70°C. On the UT69RH051, the operating voltage range is 5V+10%. The operating temperature range is -55°C to +125°C. 15 APPENDIX B Impact of External Program ROM The 8051 family of microcontrollers, including the industry standards, use ports 0 and 2 to access external memory. In implementations with external program memory, these two ports 16 are dedicated to the program ROM interface and can not be used as Input/Output ports. The UT69RH051 uses external program ROM, so ports 0 and 2 will not be available for I/O. ORDERING INFORMATION UT69RH051 Microcontroller: SMD 5962 * 95638 * * * * Lead Finish: (A) = Solder (C) = Gold (X) = Optional Case Outline: (Q) = 40-pin DIP (Y) = 44-pin Flatpack Class Designator: (Q) = Class Q (V) = Class V Device Type (01) = 8-bit Microcontroller Drawing Number: 95638 Total Dose: (H) = 1E6 rads(Si) (G) = 5E5 rads(Si) (F) = 3E5 rads(Si) (R) = 1E5 rads(Si) Federal Stock Class Designator: No options Notes: 1. Lead finish (A, C, or X) must be specified. 2. If an “X” is specified when ordering, part marking will match the lead finish and will be either “A” (solder) or “C” (gold). 3. Total dose radiation must be specified when ordering. QML Q and QML V not available without radiation hardening. 17 UT69RH051 Microcontroller UT **** *** - * * * * Total Dose: ( ) = None Lead Finish: (A) = Solder (C) = Gold (X) = Optional Screening: (C) = Mil Temp (P) = Prototype Package Type: (P) = 40-pin DIP (W) = 44-pin Flatpack Device Type: (UT69RH051) = 8-bit Microcontroller Notes: 1. Lead finish (A,C, or X) must be specified. 2. If an “X” is specified when ordering, then the part marking will match the lead finish and will be either “A” (solder) or “C” (gold). 3. Radiation characteristics are neither tested nor guaranteed and may not be specified. 4. Devices have prototype assembly and are tested at 25°C only. Radiation characteristics are neither tested nor guaranteed and may not be specified. 18