AP504 The Communications Edge TM DCS-band 4W HBT Amplifier Module Product Features Product Information Product Description • 1705 – 1790 MHz Functional Diagram The AP504 is a high dynamic range power amplifier in a RoHS-compliant flange-mount package. The multi-stage amplifier module has 33 dB gain. The module has been internally optimized for linearity to provide +25 dBm (-63 dBc ACPR) linear power for 7-carrier CDMA2000 applications. • 33 dB Gain • +25 dBm CDMA2k 7fa Power (-63 dBc ACPR) • +12 V Single Supply • Power Down Mode • Bias Current Adjustable • RoHS-compliant flange-mount pkg Applications • Final stage amplifiers for Repeaters • Optimized for driver amplifier PA mobile infrastructure The AP504 uses a high reliability InGaP/GaAs HBT process technology and does not require any external matching components. The module operates off of a +12V supply and does not requiring any negative biasing voltages; an internal active bias allows the amplifier to maintain high linearity over temperature. It has the added feature of a +5V power down control pin. While the module has been tuned for optimal performance for Class AB applications, the quiescent current can also be adjusted for Class B applications through an external resistor. A low-cost metal housing allows the device to have a low thermal resistance and achieves over 100 years MTTF. All devices are 100% RF and DC tested. 1 2 3 4 5 6 Top View Pin No. 1 2/4 3/5 6 Case Function RF Output Vcc Vpd RF Input Ground The AP504 is targeted for use as a driver or final stage amplifier in wireless infrastructure where high linearity and high power is required. This combination makes the device an excellent candidate for next generation multi-carrier 3G base stations using the DCS1800 frequency band. Specifications (1) 25 ºC, Vcc=12V, Vpd=5V, Icq=835mA, R7=0Ω, 50Ω unmatched fixture Parameter Units Min Operational Bandwidth Test Frequency Adjacent Channel Power Ratio Power Gain Input Return Loss Output Return Loss Output P1dB Output IP3 Operating Current (2) Quiescent Current, Icq (2) Device Voltage, Vcc Device Voltage, Vpd Load Stability MHz MHz dBc dB dB dB dBm dBm mA mA V V VSWR 1705 – 1790 1765 -63.2 30.5 33 11 5 +36 +52 790 850 780 835 +12 +5 10:1 Typ Max -61 35.5 Test Conditions CDMA2000 7fa 25 dBm Total Power, 885 kHz offset Pout = +25 dBm Pout = +23 dBm/tone, Δf = 1 MHz Pout = +25 dBm 940 920 Pull-down voltage: 0V = “OFF”, 5V=”ON” 1. Test conditions unless otherwise noted: 25ºC. 2. The current can be adjusted through an external resistor from the 5V supply to the pull-down voltage pin (pin 3). Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) with output terminated in 50 Ω Rating Ordering Information -40 to +85 °C -55 to +150 °C Part No. Description AP504 +15 dBm AP504-PCB DCS-band 4W HBT Amplifier Module Fully-Assembled Evaluation Board (Class AB configuration, Icq=835mA) Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 1 of 5 February 2006 AP504 The Communications Edge TM DCS-band 4W HBT Amplifier Module Product Information Performance Graphs – Class AB Configuration (AP504-PCB) +12V GND +5V +12V The AP504-PCB and AP504 module is configured for Class AB by default. The resistor – R7 – which sets the current draw for the amplifier is set at 0 Ω in this configuration. Increasing that value will decrease the quiescent and operating current of the amplifier module, as described on the next page. 10μF DNP 0Ω 0Ω DNP 100pF DNP .01μF DNP .01μF DNP 100pF RF IN 0Ω 0Ω DNP 6 5 4 3 2 DNP 1 DNP Gain Return Loss Gain vs. Temp +25 °C, 12Vcc, Icq=850mA +25 °C, Vcc=12V, Icq=850mA 1765 MHz, Vcc=12V, Icq=850mA 0 36 34 -5 34 33 32 31 30 1700 1720 1740 1760 1780 G a in (d B ) 35 M a g n itu d e (d B ) -10 -15 S11 -25 1700 1800 30 S22 26 1720 1740 1760 1780 -40 1800 -20 0 20 40 60 80 Temperature (°C) Frequency (MHz) Frequency (MHz) ACPR vs. Output Power vs. Temp ACPR vs. Output Power vs. Temp ACPR vs. Frequency vs. Temp CDMA2000 SR1, 7FA , fc=1765 MHz, Δf=±885 kHz, Vcc=12V, Icq=850mA CDMA2000 SR1, 7FA , fc=1765 MHz, Δf=±1.98 MHz, Vcc=12V, Icq=850mA CDMA2000 SR1, 7FA , Δf=±885 kHz, 25 dBm Pout, Vcc=12V, Icq=850mA -50 -40 °C +25 °C +85 °C -55 A C P R (d B c ) -50 32 28 -20 -60 -65 -70 -50 -40 °C +25 °C +85 °C -55 A C P R (d B c ) G a in (d B ) DNP A C P R (d B c ) Notes: 1. Please note that for reliable operation, the evaluation board will have to be mounted to a much larger heat sink during operation and in laboratory environments to dissipate the power consumed by the device. The use of a convection fan is also recommended in laboratory environments. Details of the mounting holes used in the WJ heatsink are given on the last page of this datasheet. 2. The area around the module underneath the PCB should not contain any soldermask in order to maintain good RF grounding. 3. For proper and safe operation in the laboratory, the power-on sequencing should be followed: 1. Connect RF In and Out 2. Connect the voltages and ground pins as shown in the circuit. 3. Apply the RF signal 4. Power down with the reverse sequence RF OUT -60 -65 -70 18 20 22 24 26 Total Output Power (dBm) 28 18 20 22 24 26 28 Total Output Power (dBm) -55 -40 °C +25 °C +85 °C -60 -65 -70 1750 1760 1770 1780 Frequency (MHz) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 2 of 5 February 2006 AP504 The Communications Edge TM DCS-band 4W HBT Amplifier Module Product Information Performance Graphs (cont’d) Icc vs. Output Power Icc / PAE vs. Output Power 1765 MHz, Vcc=12V, Icq=850mA 1765 MHz, +25 °C, Vcc=12V, Icq=850mA 860 1.98 MHz offset 885 kHz offset 1 -80 Ic c (m A ) / P A E 840 -70 Ic c (m A ) A C P R (d B c ) -60 ACPR vs. Output Power CDMA2000 SR1, 1FA , fc=1765 MHz, +25 °C, Vcc=12V, Icq=850mA 820 800 780 -40 °C -90 20 22 24 Output Power / Gain vs. Input Power 20 22 24 26 28 22 24 26 28 30 32 34 Output Power (dBm) OIP3 vs. Output Power per tone 1765 MHz, +25 °C, Vcc=12V, Icq=850mA -30 1765 MHz, +25 °C, Vcc=12V, Icq=850mA 55 IMD3_Upper IM D (d B ) -40 34 32 50 IMD3_Lower O IP 3 (d B m ) Pout Gain IMD5 -50 -60 -70 30 -4 -2 0 Input Power (dBm) 2 4 45 40 35 -80 28 -6 20 IMD vs. Output Power per tone 1765 MHz, +25 °C, Vcc=12V, Icq=850mA 36 0.2 Output Channel Power (dBm) Total Output Power (dBm) 38 Icc 0.4 0 18 26 PAE 0.6 +85 °C 760 18 G a in (d B ) / P o u t (d B m ) +25 °C 0.8 30 18 20 22 24 26 28 Output Power per tone (dBm) 18 20 22 24 26 28 Output Power per tone (dBm) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 3 of 5 February 2006 AP504 The Communications Edge TM DCS-band 4W HBT Amplifier Module Product Information MTTF Calculation The MTTF of the AP504 can be calculated by first determining how much power is being dissipated by the amplifier module. Because the device’s intended application is to be a power amplifier pre-driver or final stage output amplifier, the output RF power of the amplifier will help lower the overall power dissipation. In addition, the amplifier can be biased with different quiescent currents, so the calculation of the MTTF is custom to each application. To calculate the MTTF for the module, the junction temperature needs to be determined. This can be easily calculated with the module’s power dissipation, the thermal resistance value, and the case temperature of operation: Tj = Pdiss * Rth + Tcase Tj = Junction temperature Pdiss = Power dissipation (calculated from above) Rth = Thermal resistance = 9 ˚C/W Tcase = Case temperature of module’s heat sink The power dissipation of the device can be calculated with the following equation: Pdiss = Vcc * Icc – (Output RF Power – Input RF Power), Vcc = Operating supply voltage = 12V Icc = Operating current {The RF power is converted to Watts} While the maximum recommended case temperature on the datasheet is listed at 85 ˚C, it is suggested that customers maintain an MTTF above 1 million hours. This would convert to a derating curve for maximum case temperature vs. power dissipation as shown in the plot below. From a numerical standpoint, the MTTF can be calculated using the Arrhenius equation: MTTF = A* e(Ea/k/Tj) A = Pre-exponential Factor = 6.087 x 10-11 hours Ea = Activation Energy = 1.39 eV k = Boltzmann’s Constant = 8.617 x 10-5 eV/ ºK Tj = Junction Temperature (ºK) = Tj (ºC) + 273 A graphical view of the MTTF can be shown in the plot below. MTTF vs. Junction Temperature Maximum Recommended Case Temperature vs. Power Dissipation to maintain 1 million hours MTTF 1.E+07 80 MTTF (hours) Maximum Case Temperature (°C) 90 70 1.E+06 60 50 4 5 6 7 8 9 10 11 12 1.E+05 130 140 Power Dissipation (Watts) 150 160 170 180 Junction Temperature (°C) Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 4 of 5 February 2006 AP504 The Communications Edge TM DCS-band 4W HBT Amplifier Module Product Information Outline Drawing AP504 1 2 3 4 5 6 Outline Drawing for the Heatsink with the WJ Evaluation Board Product Marking The device will be marked with an “AP504” designator with an alphanumeric lot code on the top surface of the package noted as “ABCD” on the drawing. A manufacturing date will also be printed as “XXYY”, where the “XX” represents the week number from 1 – 52. The product will be shipped in tubes in multiples of 15. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1C Passes at ≥ 1,000 to < 2,000 volts Human Body Model (HBM) JEDEC Standard JESD22-A114 ESD Rating: Value: Test: Standard: Class III Passes ≥ 500 to < 1,000 volts Charged Device Model (CDM) JEDEC Standard JESD22-C101 Specifications and information are subject to change without notice WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: [email protected] • Web site: www.wj.com Page 5 of 5 February 2006