Preliminary 03.05.26 P0511946H 1.9 GHz band ♦ Features • • • • • • • Power Amplifier Module 1.9 GHz frequency band Typical 39.0 dBm output power Low power consumption 43 W typ. Excellent adjacent leakage power Typical 30 dB power gain Cost-effective metal package Low thermal resistance structure ♦ Applications • Final stage power amplifier of base station for PHS ♦ Description The P0511946H is a high performance 1.9 GHz band power amplifier module capable of 39 dBm output power with a typical 30 dB gain at 1.9 GHz band, housed in a cost effective metal package. This device features a low power consumption owing to the excellent linearity and high gain of the pulse-doped GaAs MESFET developed by SEI, dissipating 3600 mA typical. It operates from +12 V and -5 V power supplies. P0511946H Power Amplifier Module ♦ Absolute Maximum Ratings Case Temperature Tc=35 °C Parameter Symbol Value Units Vd 13*1 V Vg -6 V Input Power Pin 15 dBm Storage Temperature Tstg -40 to + 90 °C Operating Case Temperature Topt -20 to + 85*2 °C DC Supply Voltage Notes: Operating of this device above any one of these parameters may cause permanent damage. *1:Vg1,Vg2=-5.0 V *2:Burst Operation (Duty Ratio<=50%) ♦ Electrical Specifications Case Temperature Tc=35°C Value Parameter Symbol Test Conditions Units Min. Frequency f Supply Current (under operation) ID Gate Current IG Power Gain Ga Input VSWR 2f0 Typ. 1880 3600 Pout=39.0 dBm Vd1=12V Vd2=12 V Vd3=12V Vg1=-5.0 V Vg2=-5.0 V 27.0 Max. 1920 MHz 4000 mA 20 mA dB 30.0 1.8 2.5 -40 dBc -40 dBc Harmonic Distortion 3f0 Adjacent Channel Leakage Power Ratio Occupied Frequency Bandwidth ACLR1 600 kHz offset -68 dBc ACLR2 900 kHz offset -74 dBc 270 kHz P0511946H Power Amplifier Module ♦ Power Characteristics 45 f=1900MHz Vd1=Vd2=Vd3=12V Vg1=Vg2=-5V Pout 5000 35 4500 Ga 30 4000 Id 25 20 -15 3500 3000 -10 -5 0 5 10 15 Pin (dBm) ♦ Adjacent Channel Leakage Power Ratio -60 f=1900MHz Vd1=Vd2=Vd3=12V Vg1=Vg2=-5V π/4DQPSK 384kbps α=0.5 PN9 ACLR (dBc) -65 -600kHz +600kHz -900kHz +900kHz -70 -75 -80 25 30 35 Pout (dBm) 40 45 ID (mA) Pout (dBm), Ga (dB) 40 5500 P0511946H Power Amplifier Module ♦ Package Drawings (Dimensions are mm) 53.0 48.0 14.0 P0511946H 10.5 0 3.0 . 2.7 18.7 20.4MAX 43.0 (1) (2) (3) 8.0 (4) (5) (6) 7.5 2.5 2.5 (7) (8) (9) 15.0 2.5 2.5 7.5 1.75 6.2MAX 2.0 2.5 53.0 lot no. Dimensions are mm (+/− 0.3mm) Lead Size : 0.25x0.5 Note: (1)Lead Size (2)Nominal Variation of Lead Pitch (3)Nominal Variation of parts undescribed : 0.25x0.5 : ±0.3 : ±0.3 ♦ Pin Assignment (1) RFin (5) Vd2 (9) RFout (2) GND (6) Vg2 Case:GND (3) Vd1 (7) Vd3 (4) Vg1 (8) GND P0511946H Power Amplifier Module ♦ Evaluation Board Layout (Dimensions are mm) KP004J 60 60 C5 C4 C2 C1 C3 C6 52 RFin 22 RFout RFin Vd2 Vg2 RFout Vd3 Vd3 RFout DESIGNATION C2,C4 C1,C3,C5,C6 Vd1 Vg1 Vg2 Vg2 Vd2 Vd2 Vg1 Vg1 Vd1 RFin Vd1 Circuit Board 0.8mm Dielectric Thickness εr=4.0,18µm copper C1 VALUE 0.1µF 1.0µF C2 C3 C4 Vd3 C6 C5 Electron Device Department