NTE3102 Photon Coupled Interrupter Module NPN Transistor Description: The NTE3102 Interrupter Module is a single channel switch consisting of a gallium arsenide infrared emitting diode and an NPN silicon photo transistor mounted in a polycarbonate housing. The package is designed to optimize the mechanical resolution, coupling efficiency, ambient light rejection, cost, and reliability. Operating on the principle that objects opaque to infrared will interrupt the transmission of light between an infrared emitting diode and a photo sensor switching the output from an “ON” into an “OFF” state. Features: D High Gain D 3mm Gap Between LED and Detector D Polycarbonite case Protected Against Ambient Light Applications: D Copiers, Printers, Facsimilies, Record Players, Cassette Decks, Optoelectronic Switches Absolute Maximum Ratings: (TA = +255C unless otherwise specified) Total Device Operating Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −255 to +855C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −405 to +855C Lead Temperature (During Soldering, 5sec Max), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +2605C Infrared Emitting Diode Forward Current, IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Power Dissipation, PE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW Phototransistor Power Dissipation, PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55V Emitter−Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Electrical Characteristics: (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Emitter Reverse Breakdown Voltage V(BR)R IR = 100 A 5 − − V Forward Voltage VF IF = 50mA − 1.2 1.7 V Reverse Current IR VR = 5V − − 100 A Rev. 8−13 Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit Detector Collector−Emitter Breakdown Voltage V(BR)CEO IC = 1mA 55 − − V Emitter−Collector Breakdown Voltage V(BR)ECO IE = 100 A 5 − − V − − 100 nA VCE = 5V, IF = 5mA 0.15 − − mA VCE = 5V, IF = 20mA 1.0 − − mA VCE = 5V, IF = 30mA 1.9 − − mA IC = 1.8mA, IF = 30mA − − 0.4 V VCC = 5V, IF = 30mA, RL = 2.5k5 − 8 − s − 50 − s Collector−Emitter Dark Current ICEO VCE = 10V Coupled Photodiode Current ICE(on) Collector−Emitter Saturation Voltage VCE(sat) Turn−On Time ton Turn−Off Time toff .118 (3.0) E S .260 (6.6) .500 (12.7) .110 (2.8) Typ Sensing Area .437 (11.1) Max .315 (8.0) Min Seating Plane .300 (7.62) .100 (2.54)