ETC SC2412KLT1

LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
NPN Silicon
2SC2412K*LT1
3
COLLECTOR
1
BASE
3
2
EMITTER
1
2
CASE 318–07, STYLE 6
SOT– 23 (TO–236AB)
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
V CEO
50
V
Collector–Base Voltage
V CBO
60
V
Emitter–Base Voltage
V
7.0
V
EBO
Collector Current — Continuous
IC
150
mAdc
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
°C
Storage temperature
T stg
-55 ~+150
°C
DEVICE MARKING
2SC2412K*LT1 =G1F
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
Symbol
Collector–Emitter Breakdown Voltage
(IC = 1 mA)
Emitter–Base Breakdown Voltage
(IE = 50 µA)
Collector–Base Breakdown Voltage
(IC = 50 µA)
Collector Cutoff Current
(VCB = 60 V)
Emitter cutoff current
(VEB = 7 V)
Collector-emitter saturation voltage
(IC/ IB = 50 mA / 5m A)
DC current transfer ratio
(V CE = 6 V, I C= 1mA)
Transition frequency
(V CE = 12 V, I E= – 2mA, f =30MHz )
Output capacitance
(V CB = 12 V, I E= 0A, f =1MHz )
Min
Typ
Max
Unit
V
(BR)CEO
50
—
—
V
V
(BR)EBO
7
—
—
V
V
(BR)CBO
60
—
—
V
I CBO
—
—
0.1
µA
I EBO
—
—
0.1
µA
V CE(sat)
—
—
0.4
V
h FE
120
––
560
––
fT
—
180
––
MHz
C ob
—
2.0
3.5
pF
h FE values are classified as follows:
*
hFE
Q
120~270
R
180~390
S
270~560
M36–1/3
LESHAN RADIO COMPANY, LTD.
2SC2412K*LT1
Fig.1 Grounded emitter propagation characteristics
Fig.2 Grounded emitter output characteristics( )
50
I C, COLLECTOR CURRENT (mA)
10
1
25°C
– 55°C
50
T A = 100°
C
I C, COLLECTOR CURRENT (mA)
20
2
0.50mA
100
VCE= 6 V
0.5
T A = 25°C
80
60
40
20
0.2
0.1
0
0
–0.2
–0.4
–0.6
–0.8
–1.0
–1.2
–1.4
0
–1.6
0.4
V BE , BASE TO EMITTER VOLTAGE(V)
Fig.3 Grounded emitter output characteristics( )
1.2
1.6
2.0
Fig.4 DC current gain vs. collector current ( )
10
I C, COLLECTOR CURRENT (mA)
0.8
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
500
h FE, DC CURRENT GAIN
8
6
4
2
200
100
50
20
0
0
4
8
12
16
10
20
0.2
0.5
V CE , COLLECTOR TO EMITTER VOLTAGE (V)
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
h FE, DC CURRENT GAIN
200
100
50
20
10
0.2
0.5
1
2
5
10
20
50
I C, COLLECTOR CURRENT (mA)
100
200
2
5
10
20
50
100
200
Fig.6 Collector-emitter saturation voltage vs.
collector current
Fig.5 DC current gain vs. collector current ( )
500
1
I C, COLLECTOR CURRENT (mA)
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
I C, COLLECTOR CURRENT (mA)
M36–2/3
LESHAN RADIO COMPANY, LTD.
2S2412K*LT1
Fig.8 Collector-emitter saturation voltage vs.
collector current ( )
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
V CE(sat), COLLECTOR SATURATION VOLTAGE(V)
Fig.7 Collector-emitter saturation voltage vs.
collector current ( )
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.5
1
2
5
10
20
50
100
200
0.5
0.2
0.1
0.05
0.02
0.01
0.2
0.5
I C, COLLECTOR CURRENT (mA)
100
50
–5
–10
–20
–50
–100
I E, EMITTER CURRENT (mA)
C ob , COLLECTOR OUTPUT CAPACITANCE( pF)
C ib , EMITTER INPUT CAPACITANCE (pF)
f r , TRANSITION FREQUENCY(MHz)
200
–2
5
10
20
50
100
Fig.10 Collector output capacitance vs.collector-base voltage
Emitter inputcapacitance vs. emitter-base voltage
500
–1
2
I C, COLLECTOR CURRENT (mA)
Fig.9 Gain bandwidth product vs. emitter current
–0.5
1
20
10
5
2
1
0.2
0.5
1
2
5
10
20
50
V CB, COLLECTOR TO BASE VOLTAGE (V)
V EB, EMITTER TO BASE VOLTAGE (V)
C c-r bb, BASE COLLECTOR TIME CONSTANT( ps)
Fig.11 Base-collector time constant vs.emitter current
200
100
50
20
10
–0.2
–0.5
–1
–2
–5
–10
I E, EMITTER CURRENT (mA)
M36–3/3