RT3YA7M Composite Transistor For Muting Application DESCRIPTION is a composite transistor built OUTLINE DRAWING with Unit：mm 1.25 ① ⑥ 0.65 2.1 SC-88 package. ② ⑤ 0.65 RT1P140 and two muting transistor with resistor in ③ ④ FEATURE ・RT3Y97M is built in RTr1 side RT1P140,and RTr2,RTr3 side ・Built-in bias resistor 2.0 composite muting transistor with resistor. RTr1:R1=10kΩ RTr2,RTr3:R1=4.7kΩ 0.2 RT3YA7M ・Mini package for easy mounting APPLICATION 0.13 0～0.1 0.65 0.9 muting circuit、switching circuit ⑥ ⑤ RTr1 ④ RTr2 RTr3 TERMINAL CONNECTOR ①：BASE1 ②：COLLECTOR1 BASE2,3 ③：COLLECTOR2,3 ④：EMITTER3 ⑤：EMITTER2 ⑥:EMITTER1 JEITA：SC-88 ① ② MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER MARKING RTr1 RATING RTr2,RTr3 RATING UNIT VCBO Collector to Base voltage -9 40 V VEBO Emitter to Base voltage -50 40 V VCEO Collector to Emitter voltage -9 15 V IC Collector current -100 200 mA Collector dissipation（Ta=25 ） 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～+150 ℃ PC（Total） ③ ISAHAYA ELECTRONICS CORPORATION ⑥ ⑤ ④ .ＹC９７ Ａ７ C９ Ｙ９９ ９ ① ② ③ RT3YA7M Composite Transistor For Muting Application Electrical characteristics Symbol VCBO （Ta=25℃）（RTr1side） Test conditions Parameter Collector-base breakdown voltage Limits Min Typ Max Unit ＩC=-50μA , IE=0mA -9 V VEBO Emitter-base breakdown voltage IE=-50μA , IC=0mA -50 V VCEO Collector-emitter breakdown voltage IC=-1mA , RBE=∞ -9 V ICBO Collector cutoff current VCB=-6V , IE=0mA IEBO Emitter cutoff current VEB=-50V , I C=0mA ｈＦＥ DC current transfer ratio VCE=-5V , IC=-1mA R1 Input resistance - -0.1 μA -0.1 μA 10 - 10 KΩ Electrical characteristics（Ta=25℃）（RTr2,RTr3 common） Symbol Test conditions Parameter Limits Min Typ Max Unit VCBO Collector-base breakdown voltage ＩC=50μA , IE=0mA 40 V VEBO Emitter-base breakdown voltage IE=50μA , IC=0mA 40 V VCEO Collector-emitter breakdown voltage IC=1mA , RBE=∞ 15 ICBO Collector cutoff current VCB=40V , IE=0mA IEBO Emitter cutoff current VEB=40V , IC=0mA ｈＦＥ DC current transfer ratio VCE=5V , IC=10mA VCE(sat) Collector-emitter saturation voltage IC=50mA , IB=5mA V 820 - 0.5 μA 0.5 μA 2500 - 100 mV R1 Input resistance 4.7 KΩ fT Transition frequency VCE=6V , IE=-10mA 58 MHz Ron Output On-resistance VIN=3V, f=1MHz 1.8 Ω ISAHAYA ELECTRONICS CORPORATION Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. 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Please contact ISAHAYA electronics corporation or an authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes , such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use. ·The prior written approval of ISAHAYA Electronics Corporation is necessary to reprint or reproduce in whole or in part these materials. ·If these products or technologies are subject to the Japanese export control restrictions, they must be exported under a license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. ·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these materials or the products contained therein. Nov.2006