ISAHAYA RT3N66U

PRELIMINARY
RT3N66U
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
OUTLINE DRAWING
DESCRIPTION
Unit:mm
RT3N66U is a composite transistor built with two
1.6 ±0.05
RT1N430 in USM6F package.
1.2 ±0.05
1pin マーク
FEATURE
6
(0.5)
Silicon epitaxial type
Each transistor elements are independent.
1
0.5
1.6
±0.05
Mini package for easy mounting
(0.95)
1. 0
2
0.5
5
APPLICATION
0.2 ±0.05
(0.5)
Inverted circuit, switching circuit,
3
4
(Φ0.1 ~0.2)
interface circuit, driver circuit
※
0.12
±0.05
0.5
±0.05
⑥
TERMINAL
CONNECTOR
①:EMITTER1
②:BASE1
③:COLLECTOR2
④:EMITTER2
⑤:BASE2
⑥:COLLECTOR1
④
⑤
R1
RTr
R2
①
R1
②
RTr
JEITA:-
ISAHAYA:USM6F
③
MAXIMUM RATING (Ta=25℃)
SYMBOL
RATING
UNIT
VCBO
Collector to Base voltage
PARAMETER
50
V
VEBO
Emitter to Base voltage
6
V
VCEO
Collector to Emitter voltage
50
V
IC
Collector current
100
mA
ICM
Peak Collector current
200
mA
PC
Collector dissipation(Total, Ta=25℃)
125
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
MARKING
ISAHAYA ELECTRONICS CORPORATION
6
5
4
66
1
2
3
PRELIMINARY
RT3N66U
Composite Transistor With Resistor
For Switching Application
Silicon Epitaxial Type
ELECTRICAL CHARACTERISTICS (Ta=25℃)
Symbol
(Tr1,Tr2 common)
Parameter
V(BR)CEO
Collector to Emitter break down voltage
IC=100μA,RBE=∞
ICBO
Collector cut off current
VCB =50V,IE=0
hFE
DC forward current gain
VCE=5V,IC=1mA
VCE(sat)
Collector to Emitter saturation voltage
IC=10mA,IB=0. 5mA
R1
Input resistor
-
fT
Gain band width product
Typ
50
-
-
V
-
-
0.1
μA
100
-
-
-
-
0.1
0.3
V
3.3
4.7
6.1
kΩ
-
200
-
MHZ
(Tr1,Tr2 common)
DC forward gain current - Collector current
Input on voltage - Collector current
1000
10
VCE=5V
DC forward gain current hFE
VCE=0.2V
1
100
10
0.1
0.1
1
10
100
0.1
1
Collector current -Input off voltage
1000
VCE=5V
100
10
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
Collector current Ic(mA)
Collector current Ic (mA)
Collector current Ic (uA)
Max
1.6
1.8
2
Input off voltage VI(OFF) (V)
ISAHAYA ELECTRONICS CORPORATION
Unit
Min
VCE=6V,IE=-10mA
TYPICAL CHARACTERISTICS
Input on voltage VI(ON) (V)
Limits
Test conditions
100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep safety first in your circuit designs!
·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
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originating in the use of any product data, diagrams, charts or circuit application examples contained in these materials.
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Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
herein.
·ISAHAYA Electronics Corporation products are not designed or manufactured for use in a device or system that is used
under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
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such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
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·Please contact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these
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Jan.2003