RT2N62M Composite Transistor For Muting Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit:mm 2.1 DESCRIPTION ① ⑤ 0.2 1.25 RT2N62M is a composite transistor with built-in bias resistor ●Mini package for easy mounting 0.65 2.0 ●Built-in bias resistor ( R1=2..2 KΩ) ② 0.65 FEATURE ③ ④ APPLICATION 0.13 0～0.1 0.65 0.9 muting circuit、switching circuit ⑤ ④ RTr1 RTr2 R1 R1 ① MAXIMUM RATINGS Symbol ③ JEITA：－ JEDEC：－ （Ta=25℃）（RTr1、RTr2） Parameter Ratings Unit VCBO Collector to Base voltage 40 V VEBO Emitter to Base voltage 40 V VCEO Collector to Emitter voltage 20 V I Collector current 400 mA PC Collector dissipation（Total Ta=25℃） 150 mW Tj Junction temperature ＋150 ℃ Tstg Storage temperature -55～＋150 ℃ C ② TERMINAL CONNECTOR ①：BASE１ ②：EMITTER（COMMON） ③：BASE２ ④：COLLECTOR２ ⑤：COLLECTOR１ MARKING ISAHAYA ELECTRONICS CORPORATION ⑤ ④ N６２ ① ② ③ RT2N62M Composite Transistor For Muting Application Silicon NPN Epitaxial Type Electrical characteristics（Ta=25℃） Symbol VCBO Limits Test conditions Parameter Collector-base breakdown voltage Min Typ Max Unit ＩC=50μA , IE=0mA 40 V VEBO Emitter-base breakdown voltage IE=50μA , C=0mA 40 V VCEO Collector-emitter breakdown voltage IC=1mA , RBE=∞ 20 V ICBO Collector cutoff current VCB=40V , IE=0mA IEBO Emitter cutoff current VEB=40V , IC=0mA ｈＦＥ DC current transfer ratio VCE=5V , IC=-10mA VCE(sat) Collector-emitter saturation voltage IC=10mA , IB=0.5mA R1 Input resistance fT Transition frequency V Ron Output On-resistance V I=5V, f=1MHz 820 μA 0.5 μA 2500 - 2.86 KΩ 10 - CE 0.5 1.54 2.2 =10V, I E=-10mA, f=100MHz mV 40 MHz 0.70 Ω TYPICAL CHARACTERISTICS (Tr1、Tr2) COLLECTOR CURRENT VS. INPUT OFF VOLTAGE INPUT ON VOLTAGE VS. COLLECTOR CURRENT 1000 100 COLLECTOR CURRENT IC (μA) INPUT ON VOLTAGE VI(ON) (V) Ta=25℃ VCE=0.2V 10 1 Ta=25℃ VCE=5V 100 10 0.1 0 0.1 1 10 100 1000 0.2 0.4 0.6 INPUT OFF VOLTAGE VI(OFF) (V) COLLECTOR CURRENT IC (mA) ISAHAYA ELECTRONICS CORPORATION 0.8 1 RT2N62M Composite Transistor For Muting Application Silicon NPN Epitaxial Type DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT DC REVERSE CURRENT GAIN VS. COLLECTOR CURRENT 10000 DC REVERSE CURRENT GAIN hFER DC FORWARD CURRENT GAIN hFE 10000 1000 100 Ta=25℃ VCE=5V 10 1 1000 100 Ta=25℃ VEC=5V 10 1 0.1 1 10 100 1000 0.1 1 COLLECTOR CURRENT IC (mA) 10 100 1000 COLLECTOR CURRENT IC (mA) COLLECTOR TO EMITTER SATURATION VOLTAGE VS. COLLECTOR CURRENT ON RESISTANCE VS. INPUT VOLTAGE 100 Ta=25℃ IC/IB=20 100 ON RESISTANCE Ron (Ω) COLLECTOR TO EMITTER SATURATION VOLTAGE VCE(sat) (mV) 1000 10 10 1 1 Ta=25℃ 0.1 0.1 0.1 1 10 100 collector current IC (mA) 1000 0.1 1 10 INPUT VOLTAGE VI (V) ISAHAYA ELECTRONICS CORPORATION 100 Marketing division, Marketing planning department 6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan Keep safety first in your circuit designs! ·ISAHAYA Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or mishap. 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