HiPerFETTM Power MOSFETs Q-Class IXFA 4N100Q IXFP 4N100Q VDSS =1000 V = 4 A ID25 RDS(on) = 3.0 W trr £ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary Data Sheet Symbol Test Conditions VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 1000 V VGS Continuous ±20 V VGSM Transient ID25 TC = 25°C Maximum Ratings ±30 V 4 A IDM TC = 25°C, pulse width limited by TJM 16 A IAR TC = 25°C 4 A EAR TC = 25°C 20 mJ 700 mJ 5 V/ns 150 W EAS dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W PD TC = 25°C -55 to +150 °C TJM 150 °C Tstg -55 to +150 °C TJ TO-220 (IXFP) D (TAB) G DS TO-263 (IXFA) G S G = Gate S = Source D (TAB) D = Drain TAB = Drain °C TL 1.6 mm (0.063 in) from case for 10 s 300 Md Mounting torque (TO-220) 1.13/10 Nm/lb.in. Weight TO-220 TO-263 4 2 g g Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 1 mA VGS(th) VDS = VGS, ID = 1.5 mA IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 1000 3.0 TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 5.0 V ±100 nA 50 1 mA mA 3.0 W • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages • Low RDS (on) • Rated for unclamped Inductive load Switching (UIS) • Molding epoxies meet UL 94 V-0 flammability classification Advantages • Easy to mount • Space savings • High power density 98705 (02/04/00) 1-4 IXFA 4N100Q IXFP 4N100Q Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 20 V; ID = 0.5 • ID25, pulse test 1.5 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 2.5 S 1050 pF 120 pF 30 pF 17 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 15 ns td(off) RG = 4.7 W (External), 32 ns tf 18 ns Qg(on) 39 nC 9 nC 22 nC Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.8 (TO-220) Source-Drain Diode Symbol Test Conditions IS VGS = 0 V ISM VSD 0.25 K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 4 A Repetitive; pulse width limited by TJM 16 A IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V 250 ns t rr QRM K/W IF = IS, -di/dt = 100 A/ms, VR = 100 V IRM © 2000 IXYS All rights reserved 0.52 mC 1.8 A TO-220 AB (IXFP) Outline Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 AA (IXFA) Outline Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXFA 4N100Q IXFP 4N100Q Figure 1. Output Characteristics at 25OC Figure 2. Extended Output Characteristics at 125OC 6 4 VGS = 10V 9V 8V TJ = 25°C TJ = 25°C 5 VGS = 10V 9V 8V 7V 7V 2 ID - Amperes ID - Amperes 3 6V 4 3 6V 2 1 1 5V 5V 0 0 0 2 4 6 8 0 10 4 8 16 20 VCE - Volts VDS - Volts Figure 4. Admittance Curves Figure 3. Output characteristics at 125°C 4 4 VGS = 10V 9V 8V 3 3 7V 2 ID - Amperes TJ = 125°C ID - Amperes 12 6V 1 O TJ = 125 C 2 TJ = 25OC 1 5V 0 0 0 5 10 15 3 20 4 VDS - Volts 6 7 8 VGS - Volts Figure 5. RDS(on) normalized to 0.5 ID25 value vs. ID Figure 6. RDS(on) normalized to 0.5 ID25 value vs. TJ 2.4 2.4 VGS = 10V 2.0 2.2 RDS(ON) - Normalized 2.2 RDS(ON) - Normalized 5 TJ = 125°C 1.8 1.6 1.4 TJ = 25°C 1.2 1.0 VGS = 10V ID = 2A 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 1 2 3 ID - Amperes © 2000 IXYS All rights reserved 4 5 6 0.8 25 50 75 100 125 150 TJ - Degrees C 3-4 IXFA 4N100Q IXFP 4N100Q Figure 8. Capacitance Curves Figure 7. Gate Charge 2000 15 Ciss Capacitance - pF VDS = 600 V ID = 3 A IG = 10 mA 12 VGS - Volts 1000 9 6 f = 1MHz Coss Crss 100 3 10 0 0 10 20 30 40 50 0 60 5 10 15 20 25 30 35 VDS - Volts Gate Charge - nC Figure 9. Forward Voltage Drop of the Intrinsic Diode Figure10. Drain Current vs. Case Temperature 5 10 4 8 ID - Amperes ID - Amperes 60 6 TJ = 125OC 4 O 3 2 TJ = 25 C 2 1 0 0.2 0.4 0.6 0.8 1.0 0 1.2 -50 VSD - Volts -25 0 25 50 75 100 125 150 TC - Degrees Centigrade Figure 11. Transient Thermal Resistance R(th)JC - K/W 1.00 0.10 0.01 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds © 2000 IXYS All rights reserved 4-4