HiPerFETTM Power MOSFETs IXFJ 13N50 VDSS ID (cont) RDS(on) trr N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 13 A IDM TC = 25°C, pulse width limited by TJM 52 A IAR TC = 25°C 13 A EAR TC = 25°C 18 mJ dv/dt IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W 5 V/ns PD TC = 25°C 180 W -55 ... +150 °C TJM 150 °C Tstg -55 ... +150 °C 300 °C 5 g V A W ns Maximum Ratings TJ TL = 500 = 13 = 0.4 £ 250 1.6 mm (0.062 in.) from case for 10 s Weight G é D S G = Gate, S = Source, (TAB) D = Drain, TAB = Drain Features • Low profile, high power package • Long creep and strike distances • Easy up-grade path for TO-220 designs • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Rectifier Applications Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 mA 500 VGS(th) VDS = VGS, ID = 2.5 mA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V TJ = 25°C TJ = 125°C 200 1 mA mA RDS(on) VGS = 10 V, ID = 0.5 • ID25 Pulse test, t £ 300 ms, duty cycle d £ 2 % 0.4 W ±100 IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V 4 V nA • • • • • • • • DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Low voltage relays Advantages • High power, low profile package • Space savings • High power density 98578 (2/99) 1-4 IXFJ 13N50 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDS = 10 V; ID = 0.5 ID25, pulse test 7.5 Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz Crss td(on) 9.0 S 2800 pF 300 pF 70 pF 18 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, 27 40 ns td(off) ID = 0.5 • ID25, RG = 4.7 W (External) 76 100 ns 32 60 ns 110 120 nC 15 25 nC 40 50 nC 0.7 K/W tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 Qgd RthJC RthCK 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 13 A ISM Repetitive; pulse width limited by TJM 52 A VSD IF = IS, VGS = 0 V, Pulse test, t £ 300 ms, duty cycle d £ 2 % 1.5 V TJ = 25°C TJ = 125°C 250 350 ns ns t rr QRM IF = IS -di/dt = 100 A/ms, VR = 100 V IRM © 2000 IXYS All rights reserved TJ = 25°C TJ = 125°C 0.6 1.25 mC mC TJ = 25°C TJ = 125°C 9 15 A A TO-268 Outline All metal area are solder plated 1 - gate 2 - drain (collector) 3 - source (emitter) 4 - drain (collector) Dim. Inches Min Max Millimeters Min Max A A1 b b2 .193 .106 .045 .075 .201 .114 .057 .083 4.90 2.70 1.15 1.90 5.10 2.90 1.45 2.10 C C2 .016 .057 .026 .063 .040 1.45 .065 1.60 D D1 E E1 e .543 .551 .488 .500 .624 .632 .524 .535 .215 BSC H 1.365 1.395 34.67 35.43 L L1 L2 .780 .079 .039 .800 .091 .045 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 13.80 14.00 12.40 12.70 15.85 16.05 13.30 13.60 5.45 BSC 19.81 20.32 2.00 2.30 1.00 1.15 2-4 IXFJ 13N50 25 VGS=10V TJ = 25°C 25 8V 7V 20 TJ = 25°C 6V ID - Amperes ID - Amperes 20 15 10 15 10 5V 5 5 0 0 0 5 10 15 20 0 1 2 3 VDS - Volts 6 7 8 9 10 Figure 2. Output Characteristics at 125OC 1.4 2.50 TJ = 25°C 2.25 1.3 VGS = 10V RDS(on) - Normalized RDS(on) - Normalized 5 VGS - Volts Figure 1. Output Characteristics at 25OC 1.2 1.1 VGS = 15V 1.0 0.9 2.00 ID = 6A 1.75 1.50 1.25 1.00 0.75 0.8 0 5 10 15 20 0.50 -50 25 -25 0 ID - Amperes 25 50 75 100 125 150 TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value Figure 4. RDS(on) normalized to 0.5 ID25 value 1.2 15.0 13N50 1.1 BV/VG(th) - Normalized 12.5 ID - Amperes 4 10.0 7.5 5.0 2.5 VGS(th) BVDSS 1.0 0.9 0.8 0.7 0.6 0.0 -50 -25 0 25 50 75 100 125 150 TC - Degrees C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 0.5 -50 -25 0 25 50 75 100 125 150 TJ - Degrees C Figure 6. Admittance Curves 3-4 IXFJ 13N50 10 ID = 6.5A 8 10µs IG = 10mA ID - Amperes 7 VGS - Volts 100 VDS = 250V 9 6 5 4 3 10 Limited by RDS(on) 100µs 1ms 1 10ms 2 100ms 1 0 0.1 0 25 50 75 100 1 10 Gate Charge - nCoulombs 100 VDS - Volts Figure 7. Gate Charge Figure 8. Capacitance Curves 4000 25 20 3000 Ciss IS - Amperes Capacitance - pF 3500 2500 2000 1500 15 TJ = 125°C 10 TJ = 25°C 1000 5 Coss 500 Crss 0 0 5 10 15 20 0 0.00 25 0.25 VDS - Volts 0.50 0.75 1.00 1.25 1.50 VSD - Volt Figure 9. Source Current vs. Source to Drain Voltage Figure10. Forward Bias Safe Operating Area Thermal Response - K/W 1.00 D = 0.5 D = 0.2 0.10 D = 0.1 D = 0.05 D=0.02 D=0.01 0.01 Single Pulse 0.00001 0.0001 0.001 0.01 0.1 1 10 Time - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4