High Voltage MOSFET IXTA 2N100 IXTP 2N100 VDSS = 1000 V ID25 =2A RDS(on) = 7 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 1000 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 T C = 25°C 2 A IDM T C = 25°C, pulse width limited by TJM 8 A PD T C = 25°C 100 W -55 ... +150 °C TJM 150 °C T stg -55 ... +150 °C TJ Md Mounting torque TO-220AB (IXTP) D (TAB) GD S TO-263 AA (IXTA) G S D (TAB) 1.13/10 Nm/lb.in. Weight 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s g °C 300 G = Gate, S = Source, D = Drain, TAB = Drain Features Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. VDSS VGS = 0 V, ID = 250 µA 1000 VGS(th) VDS = VGS, ID = 250 µA 2 IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 • VDSS VGS = 0 V R DS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % TJ = 25°C TJ = 125°C IXYS reserves the right to change limits, test conditions, and dimensions. © 2000 IXYS All rights reserved V International standard packages Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Low package inductance (< 5 nH) - easy to drive and to protect Fast switching times 4.5 V Applications ±100 nA 200 1 µA mA Switch-mode and resonant-mode power supplies Flyback inverters DC choppers 7.0 Ω Advantages Space savings High power density 97540A(5/98) 1-4 IXTA2N100 IXTP2N100 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. gfs VDS = 10 V; ID = 0.5 • ID25, pulse test C iss C oss VGS = 0 V, VDS = 25 V, f = 1 MHz C rss t d(on) 1.5 2.2 S 825 pF 58 pF 15 pF 15 30 ns tr VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 15 35 ns td(off) RG = 20 Ω, (External) 60 80 ns 30 55 ns 40 nC 10 nC 15 nC tf Q g(on) Q gs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 Q gd R thJC 1.25 R thCK K/W 0.25 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V 2 A ISM Repetitive; pulse width limited by TJM 8 A VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 1.5 V t rr IF = IS, -di/dt = 100 A/µs, VR = 100 V 1000 TO-220 AB Outline Pins: 2 - Collector 4 - Collector Dim. A B C D E F G H J K M N Q R Millimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 TO-263 SMD Outline ns 1. 2. 3. 4. © 2000 IXYS All rights reserved 1 - Gate 3 - Emitter Bottom Side Gate Collector Emitter Collector Botton Side Dim. Millimeter Min. Max. Inches Min. Max. A A1 4.06 2.03 4.83 2.79 .160 .080 .190 .110 b b2 0.51 1.14 0.99 1.40 .020 .045 .039 .055 c c2 0.46 1.14 0.74 1.40 .018 .045 .029 .055 D D1 8.64 7.11 9.65 8.13 .340 .280 .380 .320 E E1 e 9.65 6.86 2.54 10.29 8.13 BSC .380 .270 .100 .405 .320 BSC L L1 L2 L3 L4 14.61 2.29 1.02 1.27 0 15.88 2.79 1.40 1.78 0.38 .575 .090 .040 .050 0 .625 .110 .055 .070 .015 R 0.46 0.74 .018 .029 IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 2-4 IXTA2N100 IXTP2N100 4 TJ=125OC VGS=10V 9V 8V 7V 6V 6V ID - Amperes 3 ID - Amperes 3 VGS=10V 9V 8V 7V TJ=25OC 2 2 1 1 5V 5V 0 0 0 5 10 15 20 25 0 30 5 15 20 25 30 VDS - Volts VDS - Volts Figure 2. Output Characteristics at 125OC O Figure 1. Output Characteristics at 25 C 3.5 4 VGS=10V VGS = 10V TJ = 125OC 3.0 RDS(ON) - Normalized RDS(ON) - Normalized 10 2.5 2.0 TJ = 25OC 1.5 1.0 0.5 0 1 2 3 3 ID= 2 A 2 ID= 1 A 1 0 25 4 50 ID - Amperes 75 100 125 150 TJ - Degrees C Figure 3. RDS(on) normalized to 0.5 ID25 value Figure 4. RDS(on) normalized to 0.5 ID25 value 2.5 2.0 2.0 ID - Amperes ID - Amperes 1.5 1.5 1.0 TJ = 25oC 1.0 0.5 0.5 0.0 -50 TJ = 125oC -25 0 25 50 75 100 125 150 T - Degrees C Figure 5. Drain Current vs. Case Temperature © 2000 IXYS All rights reserved 0.0 0 2 4 V 6 8 10 Volts Figure 6. Admittance Curves 3-4 IXTA2N100 IXTP2N100 12 10000 f = 1MHz Capacitance - pF Vds= 500V ID= 1A IG= 1mA 10 VGS - Volts 8 6 4 Ciss 1000 Coss 100 Crss 10 2 0 0 10 20 30 1 40 0 10 20 Gate Charge - nC 30 40 VDS - Volts Figure 8. Capacitance Curves Figure 7. Gate Charge 1 00 5 TC = 25OC 10 ID - Amperes ID - Amperes 4 3 TJ = 125OC 2 TJ = 25OC 2 1 1 ms 10 ms 100 ms DC 0. 1 1 0. 01 0 0.2 0.4 0.6 0.8 1.0 1.2 1 VSD - Volts 1 00 1 000 VDS - Volts Figure 9. Source Current vs. Source to Drain Voltage 1 10 Figure10. Forward Bias Safe Operating Area D=0.5 D=0.2 ZthJC (K/W) D=0.1 0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle 0.01 0.001 0.00001 Single pulse 0.0001 0.001 0.01 0.1 1 Pulse Width - Seconds Figure 11. Transient Thermal Resistance © 2000 IXYS All rights reserved 4-4