MICROSEMI 1N4148-1

Silicon Switching Diode
Applications
1N4148
or
1N4148-1
DO-35 Glass Package
Used in general purpose applications,where a controlled forward
characteristic and fast switching speed are important.
DO-35 Glass Package
Features
L
ea dDi
a.
0 .0 18-0 .0 22"
Six sigma quality
0 .458-0 .558m m
Metallurgically bonded
BKC's Sigma Bondâ„¢ plating
Dia.
1.0"
Length
for problem free solderability
25.4 mm
m m
(Min.)
LL-34/35 MELF SMD available
1.53-2.28m m
Hermetic Glass Body
Available up to JANTXV-1 levels
"S" level screening available to Source Control Drawings0.06-0.09"
0.120-.200"
3.05-5.08-
i
Maximum Ratings
Peak Inverse Voltage @ 5µA & 0.1µA @ -55oC
Average Rectified Current
Continuous Forward Current
Peak Surge Current (tpeak = 1 sec.)
BKC Power Dissipation TL=50 oC, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
Symbol
PIV
Iavg
IFdc
Ipeak
Ptot
TOp
Value
100 (Min).
200
300
1.0
500
-65 to +200
TSt
o
Electrical Characteristics @ 25 C*
Forward Voltage Drop @ IF = 10 mA
Breakdown Voltage @ IR = 5 µA
Breakdown Voltage @ IR = 100µA
Reverse Leakage Current @ VR = 75 V
Symbol
VF
PIV
PIV
IR
Unit
Volts
mAmps
mAmps
Amp
mWatts
o
C
o
-65 to +200
Minimum
***
75
100
Maximum
1.00
5 (100 @ 150 oC)
Unit
Volts
Volts
Volts
µA
Capacitance @ VR = 0 V, f = 1mHz
CT
4.0
pF
Reverse Recovery time (note 1)
trr
4.0
nSecs
Note 1: Per Method 4031-A with IF = 10 mA,Vr = 6 V, RL = 100 Ohms. * UNLESS OTHERWISE SPECIFIED
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
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