Silicon Switching Diode Applications 1N4148 or 1N4148-1 DO-35 Glass Package Used in general purpose applications,where a controlled forward characteristic and fast switching speed are important. DO-35 Glass Package Features L ea dDi a. 0 .0 18-0 .0 22" Six sigma quality 0 .458-0 .558m m Metallurgically bonded BKC's Sigma Bondâ„¢ plating Dia. 1.0" Length for problem free solderability 25.4 mm m m (Min.) LL-34/35 MELF SMD available 1.53-2.28m m Hermetic Glass Body Available up to JANTXV-1 levels "S" level screening available to Source Control Drawings0.06-0.09" 0.120-.200" 3.05-5.08- i Maximum Ratings Peak Inverse Voltage @ 5µA & 0.1µA @ -55oC Average Rectified Current Continuous Forward Current Peak Surge Current (tpeak = 1 sec.) BKC Power Dissipation TL=50 oC, L = 3/8" from body Operating Temperature Range Storage Temperature Range Symbol PIV Iavg IFdc Ipeak Ptot TOp Value 100 (Min). 200 300 1.0 500 -65 to +200 TSt o Electrical Characteristics @ 25 C* Forward Voltage Drop @ IF = 10 mA Breakdown Voltage @ IR = 5 µA Breakdown Voltage @ IR = 100µA Reverse Leakage Current @ VR = 75 V Symbol VF PIV PIV IR Unit Volts mAmps mAmps Amp mWatts o C o -65 to +200 Minimum *** 75 100 Maximum 1.00 5 (100 @ 150 oC) Unit Volts Volts Volts µA Capacitance @ VR = 0 V, f = 1mHz CT 4.0 pF Reverse Recovery time (note 1) trr 4.0 nSecs Note 1: Per Method 4031-A with IF = 10 mA,Vr = 6 V, RL = 100 Ohms. * UNLESS OTHERWISE SPECIFIED 6 Lake Street - Lawrence, MA 01841 Tel: 978-681-0392 - Fax: 978-681-9135 C