1N60A - New Jersey Semiconductor

20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.SA
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
GERMANIUM DIODES
1 Cold Bonded Germanium Diodes in DO-7 Package
Peak
Inverse
Voltage
(MIN.)
(PIV)
Type
Volts
• 65
AA113
AA117
90
AA118
90
45
AA119
25
AA138
AA143
30
100
AA144
100
AAZ15
75
AAZ17
40
AAZ18
OA47
25
OA79
40
OA90*
30
OA91*
100
OA95*
100
OA99"
45
1N34A
60
1N38A
100
1N60A
40
1N100A
80
1N27Q
100
1N276
100
1N277
125
1N695
20
1N695A
25
1N933
100
1N949
50
1N3287
6
1N3592
25
1N3666
80
1N3773
25
Average power dissipation = 80 mW
Operating temperature = -65°C to 85°C
MM
<VF>
Volts
•
1.1
0.18
1.0
1.5
1.5
0.5
1.0
0.45
0.45
0.75
0.45
2.2
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
1.0
«v
mA
15
200
0.5
15
(W
«VR
W
MA
Volts
nS
60
90
90
3
25
20
75
1
1
1
25
36
10
10
10
10
30
50
10
50
50
50
50
10
10
—
-
180
280
80
2.8
2
20
200
100
300
40
100
100
20
11
7
18
30
50
60
50
100
100
250
2
2
10
10
15
4
10
4
10
0.1
5
10
10
15
5
10
10
200
10
10
10
10
10
100
5
40
4
40
200
40
100
100
1.0
1.0
0.5
1.0
0.39
0.3
0.5
1.0
Maximum
Ravers*
Recovery
Maximum
Reverse leakage current
Maximum
Forward Voltage Drop
10
14
10
1
70
350
350
70
300
300. typ.
300
400
40
300
40
10
10
2
4.5
20
3
* For matched pairs, use a 2- prefix. Pairs are grouped in 10 millivolt VF cells, measured at 1 mA IF
• Mil-Approved Devices, See Page 5 for Level of dual
DO-7 Glass Package
(nominal dimensions)
.
1
0.020*
0.50mm
1
t I
^
25.4m ni
(Mm.)
1
i="
O.J70'_
->
8.9mm
2.4mm