MICROSEMI 1N41501N457A

Silicon Switching Diode
DO-35 Glass Package
1N4150
1N457A
Applications
Used in general purpose applications,where a controlled forward
characteristic is important.
D O -35 G lass P ack age
Features
Lead Dia.
0.018-0.022"
0.458-0.558 mm
Six sigma quality
BKC's Sigma Bondâ„¢ plating
for problem free solderability
LL-35 MELF SMD available
Hermetic Glass Package
Extremely low FIT Level
1.0"
25.4 m m
(M in.)
Maximum Ratings
Peak Inverse Voltage
Average Rectified Current
Continuous Forward Current
Peak Surge Current (tpeak = 1 sec.)
Max. Power Dissipation TL=50 oC, L = 3/8" from body
Operating Temperature Range
Storage Temperature Range
Electrical Characteristics @ 25 oC*
Forward Voltage Drop @ IF = 100 mA
Reverse Leakage @ VR = 60 V
Reverse Leakage @ VR = 60 V,100 o C
D ia .
Length
0.06 -0 .09"
0.12 0-.200 "
3.05 -5 .08- mm
1.53-2.28 mm
Symbol
PIV
Iavg
IFdc
Ipeak
Ptot
TOp
Value
70 (Min).
200
300
1.0
500
-80 to +200
TSt
Symbol
VF
IR
IR
Minimum
***
***
***
-80 to +200
Maximum
1.00
25
0.005
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Unit
Volts
mAmps
mAmps
Amp
mWatts
o
C
o
C
Unit
Volts
nA
mA