JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Power management Dual-transistors FUMF21N TRANSISTOR WBFBP-06C (2×2×0.5) unit: mm DESCRIPTION Silicon epitaxial planar transistor FEATURES z 2SA2018 and DTC114E are housed independently in a package. z Power switching circuit in a single package. z Mounting cost and area can be cut in half. 1 APPLICATION Power management circuit, mobile telephone quiver circuit For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:F21 F21 TR1 MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector- Base Voltage -15 V VCEO Collector-Emitter Voltage -12 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -0.5 A PC Collector Dissipation 0.15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ DTR2 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~40 V IO 50 IC(MAX) 100 Pd 150 Output current Power dissipation mA mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ TR1 ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Symbol unless Test otherwise conditions MIN specified) TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10µA, IE=0 -15 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA, IB=0 -12 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA, IC=0 -6 V Collector cut-off current ICBO VCB= -15 V, IE=0 -0.1 µA Emitter cut-off current IEBO VEB=- 6V, IC=0 -0.1 µA DC current gain hFE VCE=-2V, IC=-10mA VCE(sat) Collector-emitter saturation voltage fT Transition frequency Cob Collector output capacitance DTR2 270 680 IC=-200mA,IB=-10mA -0.25 V VCE=-2V,IC=-10mA, f=100MHz 260 MHz VCB=-10V,IE=0,f=1MHz 6.5 pF Electrical characteristics (Ta=25℃) Parameter Symbol Min. Typ VI(off) Input voltage VI(on) Max. 0.5 3 Unit V Conditions VCC=5V ,IO=100µA VO=0.3V ,IO=10 mA Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 µA VCC=50V, VI=0 DC current gain GI 30 Input resistance R1 7 10 13 Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT VO=5V ,IO=5mA 250 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz Typical Characteristics TR1 DTR2 Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.550 REF. 0.550 REF. 0.650 TYP. 0.400 REF. 0.300 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.022 REF. 0.022 REF. 0.026 TYP. 0.016 REF. 0.012 REF. 0.020 REF. APPLICATION CIRCUITS