JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD WBFBP-03A Plastic-Encapsulate Transistors MMBT2907AE C TRANSISTOR WBFBP-03A (1.6×1.6×0.5) unit: mm DESCRIPTION PNP Epitaxial planar type Silicon Transistor TOP B FEATURES Complementary NPN Type available(MMBT2222AE) E C 1. BASE 2. EMITTER PPLICATION general purpose amplifier, switching. For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) 3. COLLECTOR BACK E B MARKING:2F C 2F B E MAXIMUM RATINGS TA=25℃ unless otherwise noted Symbol Parameter Value VCBO Collector-Base Voltage -60 VCEO -60 Collector-Emitter Voltage VEBO -5 Emitter-Base Voltage IC Collector Current -Continuous -600 PC Collector Dissipation 150 TJ Junction Temperature 150 Tstg Storage Temperature -55to+150 ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol Units V V V mA mW ℃ ℃ unless Test otherwise conditions specified） MIN TYP MAX UNIT IC= -10μA,IE=0 -60 V(BR)CEO IC= -10mA, IB=0 -60 V V(BR)EBO IE=-10μA,IC=0 -5 V Collector cut-off current ICBO VCB=-50 V,IE=0 -0.01 Emitter cut-off current IEBO VEB= -5V,IC=0 -0.01 hFE(1) VCE=-10V,IC=-0.1mA 75 hFE(2) VCE=-10V,IC=-1mA 100 hFE(3) VCE=-10V,IC=-10mA 100 hFE(4) VCE=-10V,IC=-150mA 100 hFE(5) VCE=-10V,IC=-500mA 50 Collector-emitter saturation voltage VCE(sat) IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA -1.6 -0.4 V Base-emitter saturation voltage VBE(sat) IC=-500mA,IB=-50mA IC=-150mA,IB=-15mA -2.6 -1.3 V Collector-base breakdown voltage V(BR)CBO Collector-emitter breakdown voltage Emitter-base breakdown voltage DC current gain Transition frequency fT VCE=-20V, IC=-50mA f=100MHz V μA μA 300 200 MHz Collector output capacitance Cob VCB=-10V, IE=0, f=1MHz 8 pF Noise figure NF VCB=-5V,Ic=-0.1mA, f=1KHz,Rs=1KΩ 4 dB ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol Delay time td Rise time tr Storage time tS Fall time tf Typical Characteristics unless Test otherwise conditions specified） MIN TYP MAX UNIT VCC=-30V, IC=-150mA , IB1=-15mA 10 nS 40 nS VCC=-6V, IC=-150mA IB1=-IB2=-15mA 225 nS 30 nS MMBT2907AE Sym bol A A1 b b1 D E D2 E2 e L L1 L2 L3 L4 k z D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .2 3 0 0 .3 3 0 0 .3 2 0 R E F . 1 .5 5 0 1 .6 5 0 1 .5 5 0 1 .6 5 0 0 .7 5 0 R E F . 1 .0 0 0 R E F . 1 .0 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 8 0 R E F . 0 .2 5 0 R E F . 0 .2 0 0 R E F . 0 .3 2 0 R E F . 0 .1 6 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 1 8 0 .0 2 2 0 .0 0 0 0 .0 0 4 0 .0 0 9 0 .0 1 3 0 .0 1 3 R E F . 0 .0 6 1 0 .0 6 5 0 .0 6 1 0 .0 6 5 0 .0 3 0 R E F . 0 .0 4 0 R E F . 0 .0 4 0 T Y P . 0 .0 1 1 R E F . 0 .0 0 9 R E F . 0 .0 0 7 R E F . 0 .0 1 0 R E F . 0 .0 0 8 R E F . 0 .0 1 3 R E F . 0 .0 0 6 R E F .