JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C MMBT3906M TRANSISTOR WBFBP-03B (1.2×1.2×0.5) unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction Complementary NPN Type Available (MMBT3904M) Ultra-Small Surface Mount Package Also Available in Lead Free Version E 2. EMITTER 3. COLLECTOR BACK E B APPLICATION General Purpose Amplifier,switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING:3N C 3N B E MAXIMUM RATINGS* TA=25℃ unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -40 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -200 mA PD Power Dissipation 150 mW RƟJA Thermal Resistance, Junction to Ambient 833 ℃/W TJ Operating Temperature 150 ℃ Tstg Storage and Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ Parameter Symbol unless otherwise Test specified) conditions MIN TYP MAX UNIT Collector-base breakdown voltage V(BR)CBO IC=-10µA,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -40 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 -5 V Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency ICEX VCE=-30V,VEB(off)=-3V IEBO VEB=-5V,IC=0 hFE(1) VCE=-1V,IC=-0.1mA 60 hFE(2) VCE=-1V,IC=-1mA 80 hFE(3) VCE=-1V,IC=-10mA 100 hFE(4) VCE=-1V,IC=-50mA 60 hFE(5) VCE=-1V,IC=-100mA 30 VCE(sat)1 IC=-10mA,IB=-1mA VCE(sat)2 IC=-50mA,IB=-5mA VBE(sat)1 IC=-10mA,IB=-1mA VBE(sat)2 IC=-50mA,IB=-5mA fT VCE=-20V,IC=-10mA,f=100MHz -0.05 µA -0.1 µA 300 -0.25 -0.65 250 V -0.4 V -0.85 V -0.95 V MHz ELECTRICAL CHARACTERISTICS (Ta=25℃ Parameter unless Symbol Test Collector output capacitance Cobo Input capacitance Noise figure otherwise specified) MAX UNIT VCB=-5V,IE=0,f=1MHz 4.5 pF Ciob VEB=-0.5V,IC=0,f=1MHz 10 pF NF VCE=-5V,Ic=0.1mA,f=1KHz,RS=1KΩ 4 dB Delay time td VCC=-3V, VBE(OFF)=0.5V,IC=-10mA , 35 nS Rise time tr IB1=-1mA 35 nS Storage time tS 225 nS Fall time tf 75 nS Typical Characteristics conditions VCC=-3V, IC=-10mA,IB1= IB2=- 1mA MIN TYP MMBT3906M Sym bol A A1 b b1 b2 D E D2 E2 e L L1 L2 k z D im e n s io n s In M illim e t e r s M in . M ax. 0 .4 5 0 0 .5 5 0 0 .0 1 0 0 .0 9 0 0 .1 7 0 0 .2 7 0 0 .2 7 0 0 .3 7 0 0 .2 5 0 R E F . 1 .1 5 0 1 .2 5 0 1 .1 5 0 1 .2 5 0 0 .4 7 0 R E F . 0 .8 1 0 R E F . 0 .8 0 0 T Y P . 0 .2 8 0 R E F . 0 .2 3 0 R E F . 0 .1 5 0 R E F . 0 .3 0 0 R E F . 0 .0 9 0 R E F . D im e n s io n s In In c h e s M in . M ax. 0 .0 1 8 0 .0 2 2 0 .0 0 0 0 .0 0 4 0 .0 0 7 0 .0 1 1 0 .0 1 1 0 .0 1 5 0 .0 1 0 R E F . 0 .0 4 5 0 .0 4 9 0 .0 4 5 0 .0 4 9 0 .0 0 2 R E F . 0 .0 3 2 R E F . 0 .0 3 2 T Y P . 0 .0 1 1 R E F . 0 .0 0 9 R E F . 0 .0 0 6 R E F . 0 .0 1 2 R E F . 0 .0 0 4 R E F .