JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-05C Digital transistors (built-in resistors) FUMG9N TRANSISTOR WBFBP-05C (2×2×0.5) unit: mm DESCRIPTION Epitaxial planar type NPN silicon transistor (Built-in resistor type) FEATURES z Two DTC114E in a package. z Mounting cost and area can be cut in half. 1 APPLICATION Dual Digital Transistors for Inverter Drive For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) Equivalent circuit MARKING:G9 G9 Absolute maximum ratings(Ta=25℃) Parameter Symbol Limits Unit Supply voltage VCC 50 V Input voltage VIN -10~40 V IO 50 IC(MAX) 100 Power dissipation Pd 150 mW Junction temperature Tj 150 ℃ Storage temperature Tstg -55~150 ℃ Output current mA Electrical characteristics (Ta=25℃) Parameter Input voltage Symbol Min. Typ VI(off) VI(on) Max. 0.5 3 Unit V Conditions VCC=5V ,IO=100µA VO=0.3V ,IO=10 mA Output voltage VO(on) 0.3 V IO/II=10mA/0.5mA Input current II 0.88 mA VI=5V Output current IO(off) 0.5 µA VCC=50V, VI=0 DC current gain GI 30 Input resistance R1 7 10 13 Resistance ratio R2/R1 0.8 1 1.2 Transition frequency fT VO=5V ,IO=5mA 250 KΩ MHz VCE=10V ,IE=-5mA,f=100MHz Typical Characteristics Symbol A A1 b D E D1 E1 e L k z Dimensions In Millimeters Min. Max. 0.450 0.550 0.000 0.100 0.150 0.250 1.900 2.100 1.900 2.100 0.550 REF. 0.550 REF. 0.650 TYP. 0.500 REF. 0.450 REF. 0.500 REF. Dimensions In Inches Min. Max. 0.018 0.022 0.000 0.004 0.006 0.010 0.075 0.083 0.075 0.083 0.022 REF. 0.022 REF. 0.026 TYP. 0.020 REF. 0.018 REF. 0.020 REF.