KEC KRX102F

SEMICONDUCTOR
KRX102F
TECHNICAL DATA
EPITAXIAL PLANAR NPN/PNP TRANSISTOR
SWITCHING APPLICATION.
INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.
B
B1
FEATURES
1
5
2
With Built-in bias resistors.
D
C
A
(Thin Fine Pitch Super mini 5pin Package.)
A1
C
Including two devices in TFSV.
3
Simplify circuit design.
4
Reduce a quantity of parts and manufacturing process.
T
Q1
MILLIMETERS
_ 0.05
1.0 +
_ 0.05
0.7 +
_ 0.05
1.0 +
_ 0.05
0.8 +
0.35
_ 0.05
0.15 +
0.38+0.02/-0.04
_ 0.05
0.1 +
H
EQUIVALENT CIRCUIT
DIM
A
A1
B
B1
C
D
H
T
Q2
OUT
OUT
Q1
R1
R1=47KΩ
R2=47KΩ
R1
IN
IN
Q2
R1=10KΩ
R2=47KΩ
R2
R2
COMMON
COMMON
1. Q 1
2. Q 1
3. Q 2
4. Q 2
5. Q 1
Q2
COMMON (EMITTER)
IN (BASE)
COMMON (EMITTER)
OUT (COLLECTOR)
OUT (COLLECTOR)
IN (BASE)
TFSV
EQUIVALENT CIRCUIT (TOP VIEW)
5
Marking
4
Type Name
5
Q1
BM
Q2
1
2
1
3
Q1 MAXIMUM RATING (Ta=25
4
2
3
)
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
CHARACTERISTIC
VCEO
20
V
Emitter-Base Voltage
VEBO
10
V
IC
50
SYMBOL
RATING
UNIT
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-6
V
IC
-50
SYMBOL
RATING
PD *
100
Tj
150
Tstg
-55 150
Collector Current
Q2 MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
Collector Current
Q1, Q2 MAXIMUM RATING (Ta=25
)
CHARACTERISTIC
Power Dissipation
Junction Temperature
Storage Temperature Range
UNIT
* Total Raing.
2007. 4. 25
Revision No : 2
1/4
KRX102F
Q1 ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Output Cut-off Current
ICBO
VCB=20V, IE=0
-
-
500
Emitter Cut-off Curren
IEBO
VEB=10V, IC=0
0.08
-
0.15
DC Current Gain
hFE
VCE=5V, IC=10
120
-
-
-
Collector-Emitter Saturation Voltage
VCE(sat)
IC=5 , IB=0.25
-
-
0.15
V
Input Voltage (ON)
VI(ON)
VCE=0.2V, IC=5
1.2
-
3.6
V
Input Voltage (OFF)
VI(OFF)
VCE=5V, IC=0.1
0.8
-
1.5
V
Input Resistor
R1
-
32.9
-
61.1
-
Resistor ratio
R1/R2
-
0.8
-
1.2
-
TEST CONDITION
MIN.
TYP.
MAX.
UNIT.
Q2 ELECTRICAL CHARACTERISTICS (Ta=25
CHARACTERISTIC
)
SYMBOL
Output Cut-off Current
ICBO
VCB=-20V, IE=0
-
-
-500
Emitter Cut-off Current
IEBO
VEB=-6V, IC=0
-0.08
-
-0.15
DC Current Gain
hFE
VCE=-5V, IC=-10
120
-
-
-
-
-
-0.15
V
Collector-Emitter Saturation Voltage
VCE(sat)
IC=-5
Input Voltage (ON)
VI(ON)
VCE=-0.2V, IC=-5
-0.7
-
-1.5
V
Input Voltage (OFF)
VI(OFF)
VCE=-5V, IC=-0.1
-0.5
-
-1
V
, IB=-0.25
Input Resistor
R1
-
7
10
13
-
Resistor ratio
R1/R2
-
0.17
0.21
0.255
-
2007. 4. 25
Revision No : 2
2/2
KRX102F
IO - VI(ON)
IO - VI(OFF)
Q1
Q1
10000
Ta =25 C
Ta =-25 C
1
0.1
1
10
100
10
100
0.4
0.6
0.8
GI - IO
OUTPUT ON VOLTAGE (V)
DC CURRENT GAIN GI
1.00
Ta =100 C
Ta =25 C
Ta =-25 C
100
10
1
1.8
2.0
10
Ta =100 C
0.10
Ta =25 C
Ta =-25 C
0.01
100
1
10
100
OUTPUT CURRENT IO (mA)
IO - VI(ON)
IO - VI(OFF)
Q2
Q2
-10000
VO= -0.2V
OUTPUT CURRENT IO (µA)
OUTPUT CURRENT IO (mA)
1.6
GI= 20
OUTPUT CURRENT IO (mA)
-10
Ta =100 C
Ta =25 C
Ta =-25 C
-1
-10
INPUT ON VOLTAGE VI(ON) (V)
2007. 4. 25
1.4
Q1
VO= 0.2V
-1
-0.1
1.2
VO(ON) - IO
Q1
-100
1.0
INPUT OFF VOLTAGE VI(OFF) (V)
INPUT ON VOLTAGE VI(ON) (V)
1000
Ta =
-25
C
10
1000
Ta
=25
C
Ta =100 C
VO= 5V
Ta
=1
00
C
VO= 0.2V
OUTPUT CURRENT IO (mA)
OUTPUT CURRENT IO (mA)
100
Revision No : 2
100
VO= -5V
-1000
-100
Ta =100 C
Ta =25 C
Ta =-25 C
-10
0.0
-0.2
-0.4
-0.6
-0.8
-1.0
-1.2
-1.4
INPUT OFF VOLTAGE VI(OFF) (V)
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KRX102F
VO(ON) - IO
G I - IO
Q2
Q2
-1.00
VO= -5V
OUTPUT ON VOLTAGE (V)
DC CURRENT GAIN GI
1000
Ta =100 C
Ta =25 C
100
Ta =-25 C
10
-1
-10
OUTPUT CURRENT IO (mA)
2007. 4. 25
Revision No : 2
-100
GI= 20
Ta =100 C
-0.10
Ta =25 C
Ta =-25 C
-0.01
-1
-10
-100
OUTPUT CURRENT IO (mA)
4/4