SEMICONDUCTOR KRC660E~KRC664E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A Reduce a Quantity of Parts and Manufacturing Process. 1 2 DIM A 5 A1 Simplify Circuit Design. C With Built-in Bias Resistors. A1 B D High Packing Density. 3 E 4 Q1 Q2 1 2 0.50 _ 0.05 0.2 + _ 0.05 0.5 + H P _ 0.05 0.12 + 5 J P P J R1 5 B1 C D H C B 4 EQUIVALENT CIRCUIT (TOP VIEW) EQUIVALENT CIRCUIT MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2+ 1. Q 1 IN (BASE) 2. Q 1, Q 2 COMMON (EMITTER) 3. Q 2 IN (BASE) 4. Q 2 OUT (COLLECTOR) 5. Q 1 OUT (COLLECTOR) 3 TESV MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector Power Dissipation Collector-Emitter Voltage VCEO 50 V Junction Temperature Emitter-Base Voltage VEBO 5 V Storage Temperature Range IC Collector Current 100 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC CHARACTERISTIC SYMBOL RATING UNIT PC * 200 mW Tj 150 Tstg -55 150 * Total Rating. mA ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA DC Current Gain hFE VCE=5V, IC=1mA 120 - - IC=10mA, IB=0.5mA - 0.1 0.3 V VCE=10V, IC=5mA - 250 - MHz - 4.7 - - 10 - VCE(sat) Collector-Emitter Saturation Voltage fT * Transition Frequency KRC660E KRC661E R1 KRC662E Input Resistor - 100 - KRC663E - 22 - KRC664E - 47 - Note : * Characteristic of Transistor Only. k Type Name Marking 5 4 MARK SPEC TYPE KRC660E KRC661E KRC662E KRC663E KRC664E MARK NK NM NN NO NP 1 2002. 7. 10 Revision No : 3 2 3 1/4 KRC660E~KRC664E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Rise Time SYMBOL MIN. TYP. MAX. KRC660E - 0.025 - KRC661E - 0.03 - - 0.3 - KRC663E - 0.06 - KRC664E - 0.11 - KRC660E - 3.0 - VO=5V - 2.0 - VIN=5V - 6.0 - RL=1k - 4.0 - KRC664E - 5.0 - KRC660E - 0.2 - KRC661E - 0.12 - - 2.0 - KRC663E - 0.9 - KRC664E - 1.4 - KRC662E tr KRC661E Switching Time Storage Time KRC662E tstg KRC663E Fall Time 2002. 7. 10 KRC662E Revision No : 3 TEST CONDITION tf UNIT S 2/4 KRC660E~KRC664E V CE(sat) - I C h FE - I C KRC660E COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 10 0.1 1 3 10 30 100 IC /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 V CE =5V 0.3 1 3 10 30 100 2 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE Ta=100 C Ta=25 C Ta=-25 C 50 30 V CE =5V 0.3 1 3 3 10 30 100 VCE(sat) - I C 1k 100 1 COLLECTOR CURRENT I C (mA) KRC662E 500 300 100 IC /I B =20 1 h FE - I C 10 30 COLLECTOR CURRENT I C (mA) 2002. 7. 10 30 KRC661E COLLECTOR CURRENT I C (mA) 0.1 10 VCE(sat) - I C 500 300 10 3 h FE - I C 1k 2k 1 COLLECTOR CURRENT I C (mA) KRC661E 10 0.1 KRC660E COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k 0.3 2 Revision No : 3 100 2 KRC662E I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 0.01 Ta=25 C Ta=-25 C 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 3/4 KRC660E~KRC664E VCE(sat) - I C h FE - I C 500 300 Ta=100 C 100 Ta=25 C Ta=-25 C 50 30 V CE =5V 10 0.1 2k DC CURRENT GAIN h FE COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) 1k 0.3 1 3 10 30 100 0.1 Ta=100 C 0.05 0.03 0.01 Ta=25 C Ta=-25 C 0.1 0.3 1 3 10 30 V CE(sat) - I C 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 0.3 1 3 10 30 COLLECTOR CURRENT I C (mA) 2002. 7. 10 0.5 0.3 h FE - I C KRC664E 0.1 I C /I B =20 1 COLLECTOR CURRENT I C (mA) 1k 10 2 KRC663E COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k KRC663E Revision No : 3 100 2 100 KRC664E I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 4/4