SEMICONDUCTOR KRC860E~KRC864E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B B1 FEATURES C A Reduce a Quantity of Parts and Manufacturing Process. 1 6 2 5 3 4 A1 Simplify Circuit Design. C With Built-in Bias Resistors. D High Packing Density. EQUIVALENT CIRCUIT (TOP VIEW) EQUIVALENT CIRCUIT 6 5 P 4 P 5 J R1 B P MILLIMETERS _ 0.05 1.6 + _ 0.05 1.0 + _ 0.05 1.6 + _ 0.05 1.2 + 0.50 _ 0.05 0.2 + _ 0.05 0.5 + _ 0.05 0.12 + H C DIM A A1 B B1 C D H J Q1 Q2 E 1 2 1. 2. 3. 4. 5. 6. 3 Q1 Q1 Q2 Q2 Q2 Q1 EMITTER BASE COLLECTOR EMITTER BASE COLLECTOR TES6 MAXIMUM RATING (Ta=25 CHARACTERISTIC ) SYMBOL RATING UNIT Collector-Base Voltage VCBO 50 V Collector Power Dissipation Collector-Emitter Voltage VCEO 50 V Junction Temperature Emitter-Base Voltage VEBO 5 V Storage Temperature Range IC Collector Current 100 ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC CHARACTERISTIC SYMBOL RATING UNIT PC * 200 mW Tj 150 Tstg -55 150 * Total Rating. mA ) SYMBOL TEST CONDITION MIN. TYP. MAX. UNIT Collector Cut-off Current ICBO VCB=50V, IE=0 - - 100 nA Emitter Cut-off Current IEBO VEB=5V, IC=0 - - 100 nA DC Current Gain hFE VCE=5V, IC=1mA 120 - - IC=10mA, IB=0.5mA - 0.1 0.3 V VCE=10V, IC=5mA - 250 - MHz - 4.7 - - 10 - VCE(sat) Collector-Emitter Saturation Voltage fT * Transition Frequency KRC860E KRC861E R1 KRC862E Input Resistor - 100 - KRC863E - 22 - KRC864E - 47 - k Type Name Marking 6 5 4 1 2 3 MARK SPEC TYPE KRC860E KRC861E KRC862E KRC863E KRC864E MARK NK NM NN NO NP 2002. 7. 10 Revision No : 2 1/4 KRC860E~KRC864E ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC Rise Time SYMBOL MIN. TYP. MAX. KRC860E - 0.025 - KRC861E - 0.03 - - 0.3 - KRC863E - 0.06 - KRC864E - 0.11 - KRC860E - 3.0 - VO=5V - 2.0 - VIN=5V - 6.0 - RL=1k - 4.0 - KRC864E - 5.0 - KRC860E - 0.2 - KRC861E - 0.12 - - 2.0 - KRC863E - 0.9 - KRC864E - 1.4 - KRC862E tr KRC861E Switching Time Storage Time KRC862E tstg KRC863E Fall Time 2002. 7. 10 KRC862E Revision No : 2 TEST CONDITION tf UNIT S 2/4 KRC860E~KRC864E V CE(sat) - I C h FE - I C KRC860E COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k 1k 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 10 0.1 1 3 10 30 100 IC /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 V CE =5V 0.3 1 3 10 30 100 2 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE Ta=100 C Ta=25 C Ta=-25 C 50 30 V CE =5V 0.3 1 3 3 10 30 100 VCE(sat) - I C 1k 100 1 COLLECTOR CURRENT I C (mA) KRC862E 500 300 100 IC /I B =20 1 h FE - I C 10 30 COLLECTOR CURRENT I C (mA) 2002. 7. 10 30 KRC861E COLLECTOR CURRENT I C (mA) 0.1 10 VCE(sat) - I C 500 300 10 3 h FE - I C 1k 2k 1 COLLECTOR CURRENT I C (mA) KRC861E 10 0.1 KRC860E COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k 0.3 2 Revision No : 2 100 2 KRC862E I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 0.01 Ta=25 C Ta=-25 C 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 3/4 KRC860E~KRC864E VCE(sat) - I C h FE - I C 1k 500 300 Ta=100 C 100 Ta=25 C Ta=-25 C 50 30 V CE =5V 10 0.1 2k DC CURRENT GAIN h FE COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) KRC863E 0.3 1 3 10 30 100 0.5 0.3 0.1 Ta=100 C 0.05 0.03 0.01 Ta=25 C Ta=-25 C 0.1 0.3 1 3 10 30 V CE(sat) - I C 500 300 Ta=100 C Ta=25 C Ta=-25 C 100 50 30 VCE =5V 0.3 1 3 10 30 COLLECTOR CURRENT I C (mA) 2002. 7. 10 I C /I B =20 1 h FE - I C KRC864E 0.1 KRC863E COLLECTOR CURRENT I C (mA) 1k 10 2 COLLECTOR CURRENT I C (mA) COLLECTOR-EMITTER SATURATIN VOLTAGE VCE(sat) (V) DC CURRENT GAIN h FE 2k Revision No : 2 100 2 100 KRC864E I C /I B =20 1 0.5 0.3 0.1 Ta=100 C 0.05 0.03 Ta=25 C Ta=-25 C 0.01 0.1 0.3 1 3 10 30 100 COLLECTOR CURRENT I C (mA) 4/4