T-1 3/4 (5mm) INFRA-RED EMITTING DIODE W53SF4BT Features Description !MECHANICALLY AND SPECTRALLY MATCHED SF4 Made with Gallium Aluminum Arsenide Infrared TO THE W51P3C PHOTOTRANSISTOR. Emitting diodes. !BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAD2234 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: APR/29/2003 DRAWN: K.ZHANG PAGE: 1 OF 3 Selection Guide Par t No . Di c e W53SF4BT Po (mW/s r ) @ 20 mA *50mA L en s Ty p e GaAlAs View in g An g l e Min . Ty p . 2θ1/2 4 20 20° *7 *30 20° BLUE TRANSPARENT Notes: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 2. * Luminous intensity with asterisk is measured at 50mA. Electrical / Optical Characteristics at T)=25°°C P/N Sy m b o l Ty p . Max . Un i t Co n d i t i o n Forward Voltage S F4 VF 1.3 1.6 V IF= 2 0 m A Reverse Current S F4 IR - 10 uA V R= 5 V Capacitance S F4 C 90 - pF V F= 0 V ; f = 1 M H z Wavelength at peak emission S F4 λP 880 - nm IF= 2 0 m A Spectral line half-width S F4 ∆ λ 1/2 50 - nm IF= 2 0 m A Par ameter Absolute Maximum Ratings at T)=25°°C Item Sy m b o l S F4 Un i t s Power Dissipation PT 100 mW Forward Current IF 50 mA Peak Forward Current[1] i FS 1.2 A Reverse Voltage VR 5 V Operating Temperature TA -40~ +85 °C TSTG -40~ +85 °C Storage Temperature 260°C For 5 Seconds Lead Solder Temperature[2] Notes: 1. 1/100 Duty Cycle, 10us Pulse Width. 2. 2mm below package base. SPEC NO: DSAD2234 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: APR/29/2003 DRAWN: K.ZHANG PAGE: 2 OF 3 W53SF4BT SPEC NO: DSAD2234 APPROVED: J. Lu REV NO: V.2 CHECKED: Allen Liu DATE: APR/29/2003 DRAWN: K.ZHANG PAGE: 3 OF 3