T-1 3/4 (5mm) INFRA-RED EMITTING DIODE W53SF6C Description Features l MECHANICALLY AND SPECTRALLY MATCHED TO THE L-51P3C PHOTOTRANSISTOR. SF6 Made with Gallium Aluminum Arsenide Infrared Emitting diodes. l BOTH WATER CLEAR LENS AND BLUE TRANSPARENT LENS AVAILABLE Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: DSAD2235 APPROVED : J. Lu REV NO: V.2 CHECKED : Allen Liu DATE: APR/29/2003 DRAWN: D.H.FANG PAGE: 1 OF 3 Selection Guide P ar t N o . D ic e W5 3 S F 6 C P o (m W/s r ) @ 20 m A *50m A L en s Ty p e GaA lA s Mi n . Ty p . *50 *100 10 WATE R C LE A R Note: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. 40 V i ew i n g An g le 2θ1/2 20° 20° Electrical / Optical Characteristics at TA=25°°C It em P /N Sy m b o l Ty p . Ma x . U n it C o n d itio n VF 1.35 1.6 V I F =20mA Reverse C urrent S F6 SF6 IR - 10 uA V R=5V Juncti on C apaci tance SF6 C 30 - pF V F=0V; f=1MHz P eak S pectral Wavelength SF6 λP 860 - nm I F =20mA S pectral B andwi dth SF6 ∆λ1/2 50 - nm I F =20mA Forward Voltage Absolute Maximum Ratings at TA=25°°C P ower D i ssi pati on It em Sy m b o l S F6 U n its IF 50 mA PT Forward C urrent P eak Forward C urrent[1] i FS Reverse Voltage VR Operati ng Temperature Topr S torage Temperature Tstg Lead S older Temperature [2] Notes: 1. 1/100 Duty Cycle, 10us Pulse Width. 2. 2mm below package base. SPEC NO: DSAD2235 APPROVED : J. Lu REV NO: V.2 CHECKED : Allen Liu 100 1 5 -40~ +85 -40~ +85 260°C For 5 S econds DATE: APR/29/2003 DRAWN: D.H.FANG mW A V °C °C PAGE: 2 OF 3 W53SF6C SPEC NO: DSAD2235 APPROVED : J. Lu REV NO: V.2 CHECKED : Allen Liu DATE: APR/29/2003 DRAWN: D.H.FANG PAGE: 3 OF 3