1.5mm SIDE LOOK INFRA-RED EMITTING DIODE KM-4457F3C Description Features ! MECHANICALLY AND SPECTRALLY MATCHED TO F3 Made with Gallium Arsenide Infrared Emitting diodes. THE L-610MP4BT/BD PHOTOTRANSISTOR. ! WATER CLEAR LENS . !HIGH POWER OUTPUT. Package Dimensions Notes: 1. All dimensions are in millimeters (inches). 2. Tolerance is ±0.25(0.01") unless otherwise noted. 3. Lead spacing is measured where the lead emerge package. 4. Specifications are subject to change without notice. SPEC NO: KDA0436 APPROVED: J.LU REV NO: V.1 CHECKED: DATE: SEP/21/2001 DRAWN: J.X.FU PAGE: 1 OF 3 Selection Guide Par t No . Di c e KM-4457F3C Po (mW/s r ) @20mA L en s Ty p e GaAs WATER CLEAR View in g An g l e Min . Ty p . 2θ1/2 1.2 3 150° Note: 1. θ1/2 is the angle from optical centerline where the luminous intensity is 1/2 the optical centerline value. Electrical / Optical Characteristics at T)=25°°C Item P/N Sy m b o l Ty p . Max . Un i t Co n d i t i o n Forward Voltage F3 VF 1.2 1.5 V IF=20mA Reverse Current F3 IR - 10 uA VR=5V Junction Capacitance F3 C 90 - pF V=0 f=1MHz Peak Spectral Wavelength F3 λP 940 - nm IF=20mA Spectral Bandwidth F3 ∆λ 50 - nm IF=20mA Absolute Maximum Ratings at T)=25°°C Item Sy m b o l Max imu m Ratin g Un i t s Power Dissipation PT 100 mW Forward Current IF 50 mA Peak Forward Current[1] i FS 1.2 A Reverse Voltage VR 5 V TA -40~ +85 °C TSTG -40~ +85 °C Operating Temperature Storage Temperature 260°C For 5 Seconds Lead Solder Temperature [2] Notes: 1. 1/100 Duty Cycle, 10us Pulse Width. 2. 4mm below package base. SPEC NO: KDA0436 APPROVED: J.LU REV NO: V.1 CHECKED: DATE: SEP/21/2001 DRAWN: J.X.FU PAGE: 2 OF 3 KM-4457F3C SPEC NO: KDA0436 APPROVED: J.LU REV NO: V.1 CHECKED: DATE: SEP/21/2001 DRAWN: J.X.FU PAGE: 3 OF 3