Infrared Emitting Diode(GaAs) KEL1001L Dimensions The KEL1001L, high-power GaAs IRED mounted [Unit : mm] in a clear side-looking package, is compact, narrow radiant angle, and easy to mount. Features High power with narrow radiant angle Side-looking with plastic package RoHS Compliant Applications Photointerrupter Optical switches Mouse, toys G.Tolerance : ±0.2 [TA = 25 Absolute Maximum Ratings Parameter Symbol Rating Unit Forward Current IF 50 mA Reverse Voltage VR 5 V Pulse Forward Current*1 Power Dissipation IFP 1 A PD 100 mW Operating Temperature Topr. -25~+85 Storage Temperature Tstg. -30~+100 Tsol 260 Soldering Temperature *2 ] *1. Pulse width tw=100µsec, cycle T=10msec *2. Distance from end of the package =2mm, time=5sec, Max. [TA = 25 Electro-Optical Characteristics Symbol Conditions Min. Typ. Forward Voltage VF - 1.2 2.0 V Reverse Current IR IF=20㎃ VR=5V - - 100 µA Capacitance CT f=1㎒ - 25 - ㎊ Radiant intensity PO IF=20㎃ - 5 - ㎽/sr p IF=20㎃ - 940 - nm Spectral Width at FWHM - 50 - nm Half Angle - 10 - degrees Parameter Peak Wavelength -1- Max. Unit. ] Infrared Emitting Diode(GaAs) KEL1001L Forward current Vs. Forward voltage Power dissipation Vs. Ambient temperature 50 Forward current IF Power dissipation PD (mW) 125 100 75 Ta=25 Ta=25℃ 40 30 50 20 25 10 0 0 0 20 40 60 80 Ambient temperature T a ( 0.5 100 1.0 1.5 2.0 Forward voltage VF (V) ) Realtive radiant intensity Vs. Ambient temperature Radiant intensity Vs. Forwardb current Relative radiant intensity Po Radiant intensity Po Ta=25℃ Ta=25 101 100 10 -1 10-2 102 101 100 10-1 100 101 103 102 -20 0 20 Forward current IF Relative intensity Vs. Wavelength 60 100 80 ) Sensitivity Diagram Angular Displacement Angle(deg.) Ta=25 Ta=25℃ 100 0 +4 +20 -20 +60 80 0 60 -4 0 +80 -80 -100 40 Ta=25 Ta=25℃ 0 -6 20 0 +100 Relative intensity (%) 40 Ambient temperature T a ( 0 400 500 600 700 Wavelength 800 900 1000 1100 100 (nm) 50 50 Relative Output (%) -2- 100