ETC SKI

SKI-FF530
1.
IRED
Feature
▷The SKI-FF530 is a infrared emitting diode which mounted
high power 850 ㎚ IR CHIP.
▷It is encapsulated in water clear epoxy resin with 5 ㎜ diameter.
▷The radiation substrate material is AlGaAs.
▷ High output power even of a low drive current.
▷ Fast response time
2.
Absolute maximum ratings.
( Ta = 2 5℃ )
Parameter
Symbol
Ratings
Unit
Forward current
IF
100
㎃
Reverse voltage
VR
5
V
Peak forward current
IFM
1
A
Power dissipation
PD
150
㎽
Operation temperature
Topr.
- 20 + 80
℃
Storage temperature
Tstg.
- 30 + 100
℃
Soldering temperature
Tsol.
260 (within 5 sec)
℃
3.
Electrical/optical characteristics.
( Ta = 2 5℃ )
Parameter
Symbol
Test condition
Forward voltage
VF
IF = 50 ㎃
Reverse current
IR
VR = 5 V
*Radiant intensity
PO
IF = 50 ㎃
Peak light emitting wavelength
λp
Spectral half wave width
Min.
Max.
Unit
1.45
1.80
V
10
㎂
62
㎽/㏛
IF = 50 ㎃
850
㎚
Δλ
IF = 50 ㎃
20
㎚
Viewing angle
Θ½
IF = 50 ㎃
±30
deg
Response time
tr
IF = 50 ㎃
30
㎱
*Luminous intensity measuring equipment
35
Typ.
: OPTRONIC CABORATORIES OL-703C PROGRAMMABLE RADIOMETER.
SKI-FF530
Characteristics diagrams
■ Power dissipation vs ambient temperature.
■ Output power vs forward current.
POWER DISSIPATION (mW/sr)
125
1000
OUTPUT POWER (mw/sr)
100
100
75
50
25
10
1
0.1
0
0
20
40
60
80
AMBIENT TEMPERATURE -Ta-
1
100
■ Forward current vs forward voltage.
10
FORWARD CURRENT (mA)
100
■Relative output power vs ambient temperature.
10
POWER
80
RELATIVE OUTPUT
Forward current IF (㎃)
100
60
40
1
20
0.1
0
0
0.1
0.5
0.9
Forward voltage VF (V)
1.3
■ Spectral distribution.
Relative luminous intensity ( % )
1.0
20
40
60
80
AMBIENT TEMPERATURE
100
-Ta-
120
■ Radiation pattern.
-30
Ta = 25℃
0.8
-40
0.6
-50
-10
-20
10
20
0.8
0.6
0.
5
-60
0.4
1.0
0.4
-70
0.2
0.2
-80
0.0
-90
730
770
810
850
890
930
970
-40
Wavelength λ ( nm )
-30
-20
-10
0
Angle (。 )
2
10
20
30