SKI-FF530 1. IRED Feature ▷The SKI-FF530 is a infrared emitting diode which mounted high power 850 ㎚ IR CHIP. ▷It is encapsulated in water clear epoxy resin with 5 ㎜ diameter. ▷The radiation substrate material is AlGaAs. ▷ High output power even of a low drive current. ▷ Fast response time 2. Absolute maximum ratings. ( Ta = 2 5℃ ) Parameter Symbol Ratings Unit Forward current IF 100 ㎃ Reverse voltage VR 5 V Peak forward current IFM 1 A Power dissipation PD 150 ㎽ Operation temperature Topr. - 20 + 80 ℃ Storage temperature Tstg. - 30 + 100 ℃ Soldering temperature Tsol. 260 (within 5 sec) ℃ 3. Electrical/optical characteristics. ( Ta = 2 5℃ ) Parameter Symbol Test condition Forward voltage VF IF = 50 ㎃ Reverse current IR VR = 5 V *Radiant intensity PO IF = 50 ㎃ Peak light emitting wavelength λp Spectral half wave width Min. Max. Unit 1.45 1.80 V 10 ㎂ 62 ㎽/㏛ IF = 50 ㎃ 850 ㎚ Δλ IF = 50 ㎃ 20 ㎚ Viewing angle Θ½ IF = 50 ㎃ ±30 deg Response time tr IF = 50 ㎃ 30 ㎱ *Luminous intensity measuring equipment 35 Typ. : OPTRONIC CABORATORIES OL-703C PROGRAMMABLE RADIOMETER. SKI-FF530 Characteristics diagrams ■ Power dissipation vs ambient temperature. ■ Output power vs forward current. POWER DISSIPATION (mW/sr) 125 1000 OUTPUT POWER (mw/sr) 100 100 75 50 25 10 1 0.1 0 0 20 40 60 80 AMBIENT TEMPERATURE -Ta- 1 100 ■ Forward current vs forward voltage. 10 FORWARD CURRENT (mA) 100 ■Relative output power vs ambient temperature. 10 POWER 80 RELATIVE OUTPUT Forward current IF (㎃) 100 60 40 1 20 0.1 0 0 0.1 0.5 0.9 Forward voltage VF (V) 1.3 ■ Spectral distribution. Relative luminous intensity ( % ) 1.0 20 40 60 80 AMBIENT TEMPERATURE 100 -Ta- 120 ■ Radiation pattern. -30 Ta = 25℃ 0.8 -40 0.6 -50 -10 -20 10 20 0.8 0.6 0. 5 -60 0.4 1.0 0.4 -70 0.2 0.2 -80 0.0 -90 730 770 810 850 890 930 970 -40 Wavelength λ ( nm ) -30 -20 -10 0 Angle (。 ) 2 10 20 30