LRC LESHAN RADIO COMPANY,LTD. High-Frequency Amplifier Transistor L2SC4083PWT1 3 COLLECTOR z 3 1 BASE 1 2 2 EMITTER SC-70/SOT-323 Absolute maximum ratings (Ta=25 oC) Symbol VCBO VCEO Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current VEBO IC Collector power dissipation PC Junction temperature Storage temperature Tj Tstg Limits 20 Unit V 11 3 50 0.2 V V mA 150 - 55~+150 W o C C o Driver Marking L2SC4083PWT1=1D Electrical characteristics (Ta=25 oC) Symbol Min. Collector-base breakdown voltage Collector-emitter breakdown voltage Parameter BVCBO BVCEO Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage BVEBO 20 11 3 DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor Typ. ICBO IEBO VCE(sat) hFE fT Cob rbb'·Cc NF 82 1.4 Max. Unit 0.5 V V V uA Conditions IC = 10 µA IC = 1mA IE = 10 µA 0.5 uA VCB = 10V VEB = 2V 0.5 180 V IC/IB = 10mA/5mA GHz VCE/IC = 10V/5mA VCB = 10V , IC = 10mA , f = 500MHz 3.2 0.8 1.5 pF 4 12 ps VCB = 10V , IE = 0A , f = 1MHz VCB = 10V , IC = 10mA , f = 31.8MHz dB VCE = 6V , IC = 2mA , f = 500MHz , Rg = 50Ω 3.5 1/2 LRC LESHAN RADIO COMPANY,LTD. L2SC4083PWT1 SC-70 / SOT-323 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. A DIM L A B C D G H J K L N S 3 B S 1 2 D G C 0.05 (0.002) J N 0.071 0.087 1.80 2.20 0.045 0.032 0.012 0.053 0.040 0.016 1.15 0.80 0.30 1.35 1.00 0.40 0.047 0.000 0.055 0.004 1.20 0.00 1.40 0.10 0.004 0.010 0.10 0.25 0.017 REF 0.425 REF 0.026 BSC 0.650 BSC 0.028 REF 0.079 0.700 REF 0.095 2.00 2.40 PIN 1. BASE K H INCHES MILLIMETERS MIN MA X MIN MA X 2. EMITTER 3. COLLECTOR 0.025 0.65 0.025 0.65 0.075 1.9 0.035 0.9 0.028 0.7 inches mm 2/2