KEXIN 2SC3906K

Transistors
SMD Type
High-voltage Amplifier Transistor
2SC3906K
SOT-23
Unit: mm
+0.1
2.9-0.1
+0.1
0.4-0.1
1
0.55
High breakdown voltage.
+0.1
1.3-0.1
+0.1
2.4-0.1
0.4
3
Features
2
+0.1
0.95-0.1
+0.1
1.9-0.1
0-0.1
+0.1
0.38-0.1
+0.1
0.97-0.1
+0.05
0.1-0.01
1.Base
2.Emitter
3.collector
Absolute Maximum Ratings Ta = 25
Symbol
Rating
Unit
Collector-base voltage
Parameter
VCBO
120
V
Collector-emitter voltage
VCEO
120
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
50
mA
Collector power dissipation
PC
0.2
W
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to +150
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
Unit
Collector-base breakdown voltage
BVCBO
IC=50ìA
120
Collector-emitter breakdown voltage
BVCEO
IC=1mA
120
V
Emitter-base breakdown voltage
BVEBO
IE=50ìA
5
V
Collector cutoff current
ICBO
VCB=100V
Emitter cutoff current
IEBO
VEB=4V
DC current transfer ratio
hFE
VCE=6V, IC=2mA
V
180
Output capacitance
fT
Transition frequency
Cob
ìA
0.5
ìA
560
VCE(sat) IC=10mA, IB=1mA
Collector-emitter saturation voltage
0.5
0.5
V
VCE=-12V, IE= 2mA, f=100MHz
140
MHz
VCB=-12V, IE=0A, f=1MHz
2.5
pF
hFE Classification
Marking
TR
TS
Rank
R
S
hFE
180 390
270 560
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