Transistors SMD Type High-voltage Amplifier Transistor 2SC3906K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 High breakdown voltage. +0.1 1.3-0.1 +0.1 2.4-0.1 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Collector power dissipation PC 0.2 W Junction temperature Tj 150 Storage temperature Tstg -55 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-base breakdown voltage BVCBO IC=50ìA 120 Collector-emitter breakdown voltage BVCEO IC=1mA 120 V Emitter-base breakdown voltage BVEBO IE=50ìA 5 V Collector cutoff current ICBO VCB=100V Emitter cutoff current IEBO VEB=4V DC current transfer ratio hFE VCE=6V, IC=2mA V 180 Output capacitance fT Transition frequency Cob ìA 0.5 ìA 560 VCE(sat) IC=10mA, IB=1mA Collector-emitter saturation voltage 0.5 0.5 V VCE=-12V, IE= 2mA, f=100MHz 140 MHz VCB=-12V, IE=0A, f=1MHz 2.5 pF hFE Classification Marking TR TS Rank R S hFE 180 390 270 560 www.kexin.com.cn 1