LESHAN RADIO COMPANY, LTD. High-Frequency Amplifier Transistor L2SC3837T1G z Features 1.High transition frequency.(Typ.fT=1.5GHz) 2.Small rbb`Cc and high gain.(Typ.6ps) 3.Small NF. 4.We declare that the material of product compliance with RoHS requirements. MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-base voltage Collector Current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Value 30 18 3 50 0.2 150 -55~+150 Unit V V V mA W °C °C SC-74 (6) (1) (2) (5) (4) (3) DEVICE MARKING L2SC3837T1G=H15 z ORDERING INFORMATION Device Shipping Package L2SC3837T1G SC-74 3000/Tape & Reel L2SC3837T3G SC-74 10000/Tape & Reel ELECTRICAL CHARACTERISTICS(TA = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Collector-base time constant Noise factor Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob rbb`Cc NF Min. 30 18 3 56 600 - Typ 1500 0.9 6 4.5 Max. 0.5 0.5 0.5 180 1.5 13 - Unit V V V µA µA V MHz pF ps dB Conditions IC=10µA IC=1mA IE=10µA VCB=10V VEB= 2 V IC/IB=20mA/4mA VCE/IC=10V/10mA VCB=10V, IC=10mA, f=200MHz VCB=10V, IE=0A, f=1MHz VCB=10V, IC=10mA, f=31.8MHz VCE=12V, IC=2mA, f=200MHz,Rg=50Ω Rev.O 1/2 LESHAN RADIO COMPANY, LTD. L2SC3837T1G SC−74 D 6 5 4 E HE 1 2 3 b e C A 0.05 (0.002) L A1 q DIM A A1 b c D E e L HE q MIN 0.90 0.01 0.25 0.10 2.90 1.30 0.85 0.20 2.50 0° MILLIMETERS NOM MAX 1.00 1.10 0.06 0.10 0.37 0.50 0.18 0.26 3.00 3.10 1.50 1.70 0.95 1.05 0.40 0.60 2.75 3.00 10° − MIN 0.035 0.001 0.010 0.004 0.114 0.051 0.034 0.008 0.099 0° INCHES NOM 0.039 0.002 0.015 0.007 0.118 0.059 0.037 0.016 0.108 − 0.037 0.95 0.037 0.95 0.079 2.0 0.035 0.9 0.031 0.8 inches mm Rev.O 2/2 MAX 0.043 0.004 0.020 0.010 0.122 0.067 0.041 0.024 0.118 10°