LRC LRB751G

LESHAN RADIO COMPANY, LTD.
Schottky barrier diode
LRB751G-40T1G
zApplications
General rectification
LRB751G-40T1G
1
zFeatures
1) Small power mold type.
(SO D-723)
2) Low VF
3) High reliability
2
SOD-723
4) Pb-Free package is available
zConstruction
Silicon epitaxial planar
zAbsolute maximum ratings (Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Average rectified forward current
Forward current surge peak (60Hz・1cyc)
Junction temperature
Storage temperature
Limits
40
30
30
200
125
-40 to +125
Symbol
VRM
VR
Io
IFSM
Tj
Tstg
Unit
V
V
mA
mA
℃
℃
zElectrical characteristic (Ta=25°C)
Parameter
Forward voltage
Reverse current
Capacitance between terminals
Symbol
VF
IR
Min.
-
Typ.
-
Max.
0.37
0.5
Unit
V
µA
Ct
-
2
-
pF
Conditions
IF=1mA
VR=30V
VR=1V , f=1MHz
z DEVICE MARKING AND ORDERING INFORMATION
Device
LRB751G-40T1G
Marking
5
Shipping
4000/Tape&Reel
Rev.O 1/4
LESHAN RADIO COMPANY, LTD.
LRB751G-40T1G
Electricalcharacteristiccurves(Ta=25OC)
100
Ta=125℃
100000
10
Ta=125℃
Ta=25℃
1
Ta=-25℃
0.1
0.01
0.001
10000
1000
Ta=25℃
100
Ta=-25℃
10
100 200 300 400 500 600 700 800
5
10 15 20 25 30 35
REVERSE VOLTAGE:VR(V)
VR-IR CHARACTERISTICS
0
40
310
300
290
AVE:304.2mV
800
700
600
500
400
300
200
AVE:111.0nA
8.3ms
AVE:3.40A
5
0
4
3
Ct DISPERSION MAP
10
Ta=25℃
IF=0.5A
IR=1A
Irr=0.25*IR
n=10pcs
25
20
15
10
5
AVE:11.7ns
Ifsm
8
8.3ms 8.3ms
1cyc
6
4
2
0
0
1
IFSM DISRESION MAP
AVE:1.81pF
2
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
15
RESERVE RECOVERY TIME:trr(ns)
1cyc
10
5
1
30
Ifsm
30
6
IR DISPERSION MAP
20
25
Ta=25℃
f=1MHz
VR=0V
n=10pcs
7
0
VF DISPERSION MAP
20
8
100
280
15
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
320
10
10
Ta=25℃
VR=30V
n=30pcs
900
REVERSE CURRENT:IR(nA)
Ta=25℃
IF=1mA
n=30pcs
5
REVERSE VOLTAGE:VR(V)
VR-Ct CHARACTERISTICS
1000
330
1
0.1
0
FORWARD VOLTAGE:VF(mV)
VF-IF CHARACTERISTICS
FORWARD VOLTAGE:VF(mV)
Ta=75℃
1
0
PEAK SURGE
FORWARD CURRENT:IFSM(A)
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
0REVERSE CURRENT:IR(nA)
FORWARD CURRENT:IF(mA)
f=1MHz
Ta=75℃
10
trr DISPERSION MAP
10
NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS
Rev.O 2/4
100
LESHAN RADIO COMPANY, LTD.
LRB751G-40T1G
Electricalcharacteristiccurves(Ta=25OC)
1000
Ifsm
t
TRANSIENT
8
THAERMAL IMPEDANCE:Rth (℃/W)
PEAK SURGE
FORWARD CURRENT:IFSM(A)
10
6
4
2
1
10
100
TIME:t(ms)
IFSM-t CHARACTERISTICS
Rth(j-c)
100
Mounted on epoxy board
IM=1mA
IF=10mA
1ms
time
300us
10
0.001
0
0.1
Rth(j-a)
0.1
10
TIME:t(s)
Rth-t CHARACTERISTICS
1000
0.003
0.05
DC
D=1/2
0.03
REVERSE POWER
DISSIPATION:PR (W)
FORWARD POWER
DISSIPATION:Pf(W)
0.04
Sin(θ=180)
0.02
0.002
D=1/2
DC
Sin(θ=180)
0.001
0.01
0
0
0
0.01
0.02
0.03
0.04
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
Io-Pf CHARACTERISTICS
0
0.05
20
30
40
0.1
0.1
0A
0V
0.08
0.06
DC
0.04
Io
t
T
VR
D=t/T
VR=20V
Tj=125℃
D=1/2
0.02
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
10
REVERSE VOLTAGE:VR(V)
VR-PR CHARACTERISTICS
0A
0V
0.08
0.06
Io
t
T
DC
0.04
VR
D=t/T
VR=20V
Tj=125℃
D=1/2
0.02
Sin(θ=180)
Sin(θ=180)
0
0
0
25
50
75
100
125
AMBIENT TEMPERATURE:Ta(℃)
Derating Curve゙(Io-Ta)
0
25
50
75
100
125
CASE TEMPARATURE:Tc(℃)
Derating Curve゙(Io-Tc)
Rev.O 3/4
LESHAN RADIO COMPANY, LTD.
LRB751G-40T1G
SOD−723
D
−X−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
−Y−
E
b
2X
0.08 (0.0032) X Y
DIM
A
b
c
D
E
HE
L
A
c
L
MILLIMETERS
INCHES
MIN
NOM MAX MIN
NOM MAX
0.49
0.52
0.55
0.019 0.020 0.022
0.25
0.28
0.32 0.0098 0.011 0.013
0.08
0.12
0.15 0.0032 0.0047 0.0059
0.95
1.00
1.05
0.037 0.039 0.041
0.55
0.60
0.65
0.022 0.024 0.026
1.35
1.40
1.45
0.053 0.055 0.057
0.15
0.20
0.25
0.006 0.0079 0.010
HE
SOLDERING FOOTPRINT*
1.1
0.043
0.45
0.0177
0.50
0.0197
SCALE 10:1
mm Ǔ
ǒinches
Rev.O 4/4