Preview‡ 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Mobile Double Data Rate (DDR) SDRAM MT46H16M16LF – 4 Meg x 16 x 4 Banks MT46H8M32LF – 2 Meg x 32 x 4 Banks For a complete data sheet, please refer to www.micron.com/mobileds. Features Figure 1: 60-Ball VFBGA Assignment • VDD = +1.8V ±0.1V, VDDQ = +1.8V ±0.1V • Bidirectional data strobe per byte of data (DQS) • Internal, pipelined double data rate (DDR) architecture; two data accesses per clock cycle • Differential clock inputs (CK and CK#) • Commands entered on each positive CK edge • DQS edge-aligned with data for READs; centeraligned with data for WRITEs • Four internal banks for concurrent operation • Data masks (DM) for masking write data–one mask per byte • Programmable burst lengths: 2, 4, 8, 16 or full page • Concurrent auto precharge option is supported • Auto refresh and self refresh modes • 1.8V LVCMOS compatible inputs • On-chip temperature sensor to control refresh rate • Partial array self refresh (PASR) • Deep power-down (DPD) • Selectable output drive (DS) • Clock stop capability Options • VDD/VDDQ • 1.8V/1.8V • Configuration • 16 Meg x 16 (4 Meg x 16 x 4 banks) • 8 Meg x 32 (2 Meg x 32 x 4 banks) • Plastic Package • 60-Ball VFBGA1 • 90-Ball VFBGA 2 • Timing – Cycle Time • 6ns @ CL = 3 • 7.5ns @ CL = 3 • 10ns @ CL = 3 • Operating Temperature Range • Commercial (0° to +70°C) • Industrial (-40°C to +85°C) 1 2 3 VSS DQ15 VDDQ 4 5 6 7 8 9 VSSQ VDDQ DQ0 VDD DQ13 DQ14 DQ1 DQ2 VSSQ VSSQ DQ11 DQ12 DQ3 DQ4 VDDQ VDDQ DQ9 DQ10 DQ5 DQ6 VSSQ VSSQ UDQS DQ8 DQ7 LDQS VDDQ VSS UDM NC A13, NC LDM VDD CKE CK CK# WE# CAS# RAS# A9 A11 A12 CS# BA0 BA1 A6 A7 A8 A10/AP A0 A1 VSS A4 A5 A2 A3 VDD A B C D E F G H J K Marking Table 1: H 16M16 8M32 TBD -6 -75 -10 Configuration Addressing Architecture 16 Meg x 16 8 Meg x 32 Configuration Refresh Count Row Addressing Bank Addressing Column Addressing 4 Meg x 16 x 4 8K 8K (A0–A12) 4 (BA0, BA1) 1K (A0–A9) 2 Meg x 32 x 4 4K 4K (A0–A11) 4 (BA0, BA1) 1K (A0–A9) None IT Notes:1. Only available for x16 configuration. 2. Only available for x32 configuration. PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H16M16.fm - Rev. A 03/05 EN 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. ‡Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. Preview 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM ® 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 [email protected] www.micron.com Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. Advance: This data sheet contains initial descriptions of products still under development. PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H16M16.fm - Rev. A 03/05 EN 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved. Preview 256Mb: 16 Meg x 16, 8 Meg x 32 Mobile DDR SDRAM Revision History • Original Document, Preview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 03/05 PDF: 09005aef818ff781/Source: 09005aef818ff799 MT46H16M16.fm - Rev. A 03/05 EN 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2005 Micron Technology, Inc. All rights reserved.