Low OperatingVoltage, High fT Bipolar Microwave Transistors MP4T6365 V2.00 Features •Designed for Battery Operation •fT to 10 GHz •Low Voltage Oscillator and Amplifier •Low Phase Noise and Noise Figure •Hermetic and Surface Mount Packages and Chips Av ailable •Can be Screened to JANTX, JANTXV Equiv alent Lev els Description The MP4T6365 family of low v oltage, high gain bandwidth silicon NPN bipolar transistors prov ides low noise figure and high gain at low bias v oltages. These transistors are especially attractiv e for low operating v oltage low noise amplifiers or driv er amplifiers at frequencies to 4 GHz. They are also useful for low phase noise local oscillators and VCOs in battery operated equipment to 10 GHz. Case Styles SOT-23 SOT-143 The MP4T6365 family was designed to hav e low noise figure at operating v oltages as low as 3 v olts. These transistors also exhibit low phase noise in VCOs operating at 5 v olts or less. Because this transistor family was specifically designed to perate from low bias v oltage, it has superior phase noise in comparison to similar current bipolar transistors with higher collector breakdown v oltage when operating under the same low v oltage conditions. Chip The MP4T6365 series transistors are av ailable in hermetic Micro-X packages, the SOT-23, the SOT-143, and in chip form (MP4T636500). Other stripline and hermetic packages are av ailable. The chip and hermetic packages can be screened to JANTX, JANTXV equiv alent lev els. The plastic parts can be supplied on tape and reel. All of M-Pulse’s silicon bipolar transistor families use silicon dioxide and silicon nitride passiv ation to assure low 1/F noise for amplifier and oscillator applications. Micro-X Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 1 Low Operating Voltage, High fT Bipolar Microwave Transistors MP4T6365 Series V2.00 Maximum Ratings (TA = 25°C) MP4T6365 Series Collector-Base Voltage VCBO 10 V Collector-Emitter Voltage VCE 6V Emitter-Base Voltage VEB 1.5 V Collector Current IC 65 mA Junction Operating Temperature Tj 200°C Storage Temperature Chip or Ceramic Packages Plastic Packages TS -65°C to +200°C -65°C to +125°C Maximum Dissipation @ 25°C Maximum Operating Temperature Chip (MP4T636500) 400 mW 175°C SOT-23 (MP4T636533) 200 mW 125°C Micro-X Package (MP4T636535) 300 mW 150°C SOT-143 (MP4T636539) 225 mW 125°C Power Dissipation Package Type Electrical Specifications @ 25°C MP4T6365 Series Parameter of Test Condition MP4T636500 MP4T636535 MP4T636539 MP4T636533 Symbol Units Chip Micro-X SOT-143 SOT-23 10 typ 10 typ 10 typ 10 typ 14 typ 7.0 min 13 typ 7.0 min 13 typ 7.0 min 13 typ 7.0 min 1.3 typ 1.6 typ 1.3 typ 1.6 typ 1.4 typ 1.7 typ 1.4 typ 1.7 typ 15 typ 10 typ 15 typ 10 typ 14 typ 9 typ 14 typ 9 typ 16 typ 12 typ 16 typ 11 typ 16 typ 10 typ 16 typ 10 typ 16 typ 12 typ 17 typ 13 typ 16 typ 12 typ 16 typ 12 typ Gain Bandwidth Product VCE = 3 V I C = 20 mA fT GHz Insertion Power Gain VCE = 3 V I C = 10 mA f = 1 GHz f = 2 GHz |S21E|2 dB VCE = 3 V I C = 5 mA f = 1 GHz f = 2 GHz NF VCE = 3 V I C = 5 mA f = 1 GHz f = 2 GHz GTU (max) VCE = 3 V I C = 20 mA f = 1 GHz f = 2 GHz MAG VCE = 3 V I C = 20 mA f = 2 GHz f = 4 GHz P1dB Noise Figure Unilateral Gain Maximum Available Gain Output Power at 1 dB Compression dB dB dB dBm Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 2 Low Operating Voltage, High fT Bipolar Microwave Transistors MP4T6365 Series V2.00 Electrical Specifications @ 25°C Parameter Condition Symbol Min Typical Max Units Collector Cut-off Current VCB = 3 volts I E = 0 µA I CBO 100 µA Emitter Cut-off Current VEB = 1 volt I C = 0 µA I EBO 1 µA Forward Current Gain VCE = 3 volts I C = 5 mA hFE 30 75 200 Collector-Base Junction Capacitance VCB = 5 volts I E = 0 µA f = 1 MHz COB 0.50 0.70 pF Typical Common Emitter Scattering Parameters in the MIcro-X Package MP4T636535, VCE = 3 Volts, IC = 5 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 500 1000 0.640 0.580 -103 -153 6.343 3.984 116.9 91.5 0.103 0.123 38.7 29.0 0.534 0.346 -75.2 -103.0 1500 0.571 -175 2.813 77.9 0.135 27.7 0.250 -124.9 2000 0.590 168 2.214 67.0 0.146 26.8 0.242 -140.4 2500 0.597 155 1.853 57.9 0.159 27.3 0.211 -150.2 3000 0.622 144 1.632 48.2 0.174 27.3 0.227 -164.1 3500 0.646 134 1.460 40.1 0.190 26.8 0.229 -168.0 4000 0.676 124 1.341 31.7 0.205 25.6 0.238 170.7 4500 0.712 115 1.241 23.7 0.218 24.1 0.255 167.9 5000 0.750 106 1.191 16.4 0.238 22.2 0.277 157.8 5500 0.793 96 1.130 8.4 0.257 20.2 0.310 153.0 6000 0.833 88 1.081 2.5 0.272 17.3 0.323 145.0 MP4T636535, VCE = 3 Volts, IC = 10 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 500 1000 0.580 0.589 -142 -175 8.562 4.641 104.6 85.8 0.066 0.086 39.1 40.5 0.389 0.274 -102.8 -132.0 1500 0.592 170 3.200 75.1 0.106 42.9 0.228 -158.1 2000 0.617 157 2.480 65.9 0.125 43.0 0.243 -169.4 2500 0.625 146 2.069 57.9 0.150 42.7 0.220 171.9 3000 0.652 136 1.811 48.9 0.172 40.8 0.250 166.9 3500 0.676 127 1.613 41.3 0.195 38.3 0.251 161.4 4000 0.707 118 1.479 33.3 0.218 35.1 0.270 150.2 4500 0.741 109 1.366 25.6 0.234 31.9 0.281 146.1 5000 0.776 100 1.311 18.5 0.259 28.1 0.311 135.9 5500 0.817 91 1.240 10.6 0.281 24.9 0.342 132.5 6000 0.855 82 1.118 3.0 0.298 20.5 0.351 125.1 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Low Operating Voltage, High fT Bipolar Microwave Transistors MP4T6365 Series V2.00 Typical Common Emitter Scattering Parameters in the MIcro-X Package (Cont’d) MP4T636535, VCE = 3 Volts, IC = 20 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 500 1000 0.551 0.567 -160 177 9.374 4.916 99.1 84.2 0.048 0.071 46.7 52.5 0.321 0.238 -111.2 -139.5 1500 0.577 164 3.373 74.7 0.094 54.2 0.217 -161.0 2000 0.599 153 2.613 66.4 0.117 53.2 0.223 -171.4 2500 0.611 143 2.174 58.9 0.144 52.0 0.214 168.4 3000 0.633 133 1.898 50.6 0.169 49.2 0.232 163.6 3500 0.659 125 1.690 43.4 0.194 45.9 0.242 159.3 4000 0.689 116 1.552 35.8 0.219 42.1 0.256 149.4 4500 0.724 107 1.444 28.4 0.238 38.3 0.274 144.3 5000 0.758 99 1.378 21.4 0.263 33.9 0.294 135.8 5500 0.800 90 1.309 13.5 0.287 30.0 0.319 130.4 6000 0.840 82 1.252 6.0 0.304 25.3 0.333 124.2 MP4T636535, VCE = 3 Volts, IC = 40 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 500 1000 0.589 0.604 -173 141 9.150 5.202 93.6 80.8 0.044 0.067 55.7 59.2 0.275 0.220 -120.0 -147.2 1500 0.620 159 3.505 70.8 0.094 58.6 0.210 -164.0 2000 0.642 149 2.685 62.2 0.119 56.4 0.210 174.3 2500 0.666 138 2.218 54.1 0.145 53.8 0.212 171.8 3000 0.681 128 1.935 45.9 0.172 50.0 0.220 168.3 3500 0.704 119 1.710 37.6 0.195 46.0 0.234 161.2 4000 0.738 110 1.560 29.8 0.218 41.9 0.248 153.7 4500 0.777 101 1.445 22.3 0.240 37.8 0.265 147.0 5000 0.819 92 1.365 14.5 0.262 33.7 0.283 140.6 5500 0.858 82 1.290 6.7 0.284 29.9 0.301 134.8 6000 0.896 73 1.228 -1.4 0.305 25.5 0.328 128.3 MP4T636535, VCE = 3 Volts, IC = 60 mA Frequency (MHz) Mag. S11E Angle Mag. S21E Angle Mag. S12E Angle Mag S22E Angle 500 1000 0.604 0.614 -179 167 8.203 4.730 92.9 80.5 0.040 0.084 60.9 63.6 0.242 0.189 -112.0 -139.1 1500 0.631 156 3.220 69.9 0.091 61.8 0.182 -155.9 2000 0.655 146 2.480 60.6 0.116 59.0 0.181 -168.3 2500 0.681 135 2.048 51.8 0.141 55.8 0.182 -172.5 3000 0.697 125 1.778 43.3 0.166 51.9 0.190 -174.3 3500 0.721 116 1.573 34.8 0.189 47.9 0.204 170.8 4000 0.758 107 1.430 26.8 0.211 43.9 0.217 164.7 4500 0.798 97 1.325 19.3 0.232 40.0 0.234 158.5 5000 0.843 88 1.255 11.4 0.254 36.2 0.253 152.9 5500 0.883 79 1.190 3.3 0.279 32.4 0.278 146.6 6000 0.922 69 1.125 -5.2 0.298 27.6 0.300 138.4 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 4 Low Operating Voltage, High fT Bipolar Microwave Transistors MP4T6365 Series V2.00 MP4T6365 Typical Performance Curves NOMINAL COLLECTOR-BASE CAPACITANCE (COB) vs COLLECTOR-BASE VOLTAGE (MP4T636535) POWER DERATING CURVES 500 400 1 COLLECTOR-BASE CAPACITANCE (pF) TOTAL POWER DISSIPATION (mW) 1.1 MP4T636500 Chip on Infinite Heat Sink 450 350 300 250 MP4T636535 in Micro-X Package 200 150 MP4T636533 in SOT-23 Package 100 50 0.9 0.8 0.7 0.6 0.5 0.4 0 0 0 25 50 75 100 125 150 175 5 10 AMBIENT TEMP (7C) NOMINAL GAIN vs COLLECTOR CURRENT at f = 1.0 GHz, VCE = 3 Volts (MP4T636535) NOMINAL GAIN vs FREQUENCY at VCE = 3 Volts, IC = 10 mA (MP4T636535) 20 19 24 18 GAIN (dB) 20 GAIN (dB) 15 COLLECTOR-BASE VOLTAGE (Volts) 16 GTU (MAX) 12 MAG 17 16 15 GTU (MAX) 14 13 8 |S21E|2 12 |S21E|2 4 11 1 0 1 5 2 10 100 COLLECTOR CURRENT (mA) 10 FREQUENCY (GHz) Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 5 Low Operating Voltage, High fT Bipolar Microwave Transistors MP4T6365 Series V2.00 Typical Performance Curves (Cont’d) NOMINAL DC CURRENT GAIN (hFE) vs COLLECTOR CURRENT at VCE = 3 VOLTS (MP4T636535) NOMINAL GAIN BANDWIDTH PRODUCT (fT) vs COLLECTOR CURRENT at VCE = 3 VOLTS (MP4T636535) 120 DC CURRENT GAIN (hFE) GAIN BANDWIDTH PRODUCT (GHz) 12 10 8 6 4 110 100 90 80 70 60 50 40 2 1 10 0 100 NOMINAL NOISE FIGURE and ASSOCIATED GAIN vs FREQUENCY at VCE = 3 VOLTS, COLLECTOR CURRENT = 5 mA (MP4T636535) 20 30 40 50 60 70 NOMINAL NOISE FIGURE and ASSOCIATED GAIN at VCE = 3 VOLTS, and 1 GHz vs the COLLECTOR CURRENT (MP4T636535) 100 16 10 NOISE ASSOCIATED FIGURE(dB) GAIN (dB) NOISE ASSOCIATED FIGURE(dB) GAIN (dB) 10 COLLECTOR CURRENT (mA) COLLECTOR CURRENT (mA) ASSOCIATED GAIN NOISE FIGURE 2 1 0.1 1 COLLECTOR CURRENT (mA) 10 14 12 ASSOCIATED GAIN 10 8 6 4 NOISE FIGURE 2 0 1 10 COLLECTOR CURRENT (mA) 100 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 6 Low Operating Voltage, High fT Bipolar Microwave Transistors MP4T6365 Series V2.00 Typical Performance Curves (Cont’d) NOMINAL OUTPUT POWER at the 1dB COMPRESSION POINT vs COLLECTOR CURRENT at f = 2 and 4 GHz, VCE = 3 VOLTS (MP4T636535) 24 POWER OUT @ 1 dB COMPRESSION (dBm) 22 20 18 16 2 GHz 14 12 10 4 GHz 8 6 0 10 20 30 40 COLLECTOR CURRENT (mA) Case Styles MP4T636533 SOT-23 MA4T636533 F N A D Collector B M G K L H Base DIM. A B C D E F G H J K L INCHES MIN. MAX. 0.044 0.004 0.040 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.037 typical 0.075 typical 0.103 0.024 DIM. M N GRADIENT 10°max. 1 2°. . . 30° MILLIMETERS MIN. MAX. 1.12 0.10 1.00 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 0.95 typical 1.90 typical 2.60 0.60 E J C Emitter NOTE: 1. Applicable on all sides Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 7 Low Operating Voltage, High fT Bipolar Microwave Transistors MP4T6365 Series V2.00 Case Styles (Cont’d) MP4T636535 Micro-X MP4T636535 DIM. A B C D E F G H Emitter F 4 PLCS. E H Collector Base B Emitter INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45° MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.46 0.56 3.81 0.08 0.15 45° A C MP4T636500 D G DIM. A B (Dia.) 2 plcs. C D E F (chip thickness) MP4T636500 B BASE C INCHES 0.013 0.0012 0.004 0.0005 0.013 0.0045 MILLIMETERS 0.325 0.030 0.110 0.013 0.325 0.114 E MP4T636539 DIM. A B C D E F G H J K L M INCHES MIN. MAX. 0.044 0.004 0.040 0.030 0.035 0.013 0.020 0.003 0.006 0.110 0.119 0.047 0.056 0.075 typical 0.040 typical 0.103 0.024 DIM. N P GRADIENT 10°max. 1 2°. . . 30° EMITTER D A Case Style SOT-143 MP4T636539 Base Emitter G P A J B N H L M E D F MILLIMETERS MIN. MAX. 1.10 0.10 1.00 0.75 0.90 0.35 0.50 0.08 0.15 2.80 3.00 1.20 1.40 1.90 typical 1.70 typical 2.60 0.60 C K NOTE: 1. Applicable on all sides Collector Emitter Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 8