Silicon Bipolar Low Noise Microwave Transistors MP42141 Case Styles Features • Low Intrinsic Noise Figure (2.3dB Typical @ 1.0 GHz) • High Power Gain At 1.0 GHz – 18.0 dB Typical • Gold Metalization • Hermetic and Surface Mount Packages Available • Can be Screened to JANTX, JANTXV Equivalent Levels • ION Implanted arsenic Emitter for Consistent Performance Description This NPN Silicon transistor finds applications in low noise and medium power microwave amplifier circuitry. The MP42141 exhibits an excellent noise figure characteristic over the frequency range of .5 to 2 GHz. This transistor also features good high frequency current gain at medium current levels. Micro-X Applications RF amplifiers and low level oscillators. Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 1 Silicon Bipolar High fT Low Noise Microwave Transistors MP42141 Series Absolute Maximum Ratings MP42141 Series Collector-Base Voltage VCBO 27 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 1.5 V Collector Current IC 50 mA Junction Operating Temperature Tj 200°C Storage Temperature Chip or Ceramic Packages Plastic Packages -65°C to +200°C -65°C to +125°C Total Power Dissipation at 25°C 509 Case Style 400 mW 510 Case Style 700 mW 35 Case Style 700 mW Electrical Specifications @ 25°C MP42141 Series Condition Symbol Units MP4214100 Chip MP4214135 Micro-X MP42141-509 TO-72 Gain Bandwidth Product VCE = 10 volts Fm =1.0 GHz Ic = 15 mA fT GHz 4.1 typ ----- ----- Insertion Power Gain VCE = 15 volts IC = 15 mA f = 1 GHz f = 2 GHz |S21E|2 dB 13 typ 7 typ 13 typ 7 min 11 typ 5 typ VCE = 10 volts IC = 5 mA f = 1 GHz f = 2 GHz NF 2.0 typ 3.4 typ 2.0 typ 3.4 typ 2.3 typ 3.6 typ VCE = 10 volts IC = 15 mA f = 1 GHz GTU (max) 17 typ 17 typ 14 typ VCE = 10 volts IC = 10 mA f = 1 GHz P1dB N/A +7 typ +4 typ Parameter of Test Noise Figure Unilateral Gain Power Out at 1 dB Compression Z=OPT dB dB dBm Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 2 Silicon Bipolar High fT Low Noise Microwave Transistors MP42141 Series Electrical Specifications @ 25°C MP42141 Series Parameter Condition Symbol Min Typical Max Units Collector Cut-off Current VCB = 10 volts IE = 0 µA ICBO 100 nA Emitter Cut-off Current VEB = 1 volt IC = 0 µA IEBO 1 µA Forward Current Gain VCE = 10 volts IC = 5 mA hFE 20 125 250 Collector-Base Junction Capacitance VCB = 15 volts f = 1 MHz CCB ---- 1.0 pF (35) Typical Scattering Parameters MP42141-511, VCE = 10 Volts, IC = 5 mA Frequency (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle 400 500 .626 .618 -112.9 -125.0 7.563 6.425 110.3 102.1 .044 .046 43.0 38.9 .726 .660 -34.3 -32.9 S11E S21E S12E S22E 800 .577 -150.8 4.363 84.7 .054 34.3 .616 -38.6 1200 .566 -170.1 3.073 67.7 .062 32.9 .577 -43.1 1600 .661 -175.9 2.344 54.1 .069 32.6 .578 -50.4 2000 .561 166.2 1.894 43.2 .078 32.6 .571 -63.6 2400 .597 156.6 1.608 30.6 .084 30.3 .572 -70.8 2800 .506 147.8 1.408 17.9 .093 27.0 .565 -81.4 3200 .630 141.1 1.200 6.8 .099 24.6 .583 -90.7 3600 .651 133.7 1.072 -4.6 .106 21.7 .597 -102.6 4000 .643 132.9 .933 -6.5 .109 24.7 .599 -109.2 4400 .643 127.7 .796 -18.4 .112 21.4 .637 -121.6 4800 .656 122.7 .702 -28.8 .123 17.0 .686 -135.2 5000 .652 120.1 .657 -34.1 .123 14.0 .693 -142.1 MP42141-511, VCE = 15 Volts, IC = 15 mA Frequency (MHz) Mag. Angle Mag. Angle Mag. Angle Mag Angle 400 500 .537 .547 -143.2 -152.2 10.294 8.564 100.9 93.7 .026 .028 45.4 46.0 .608 .569 -31.2 -29.3 S11E S21E S12E S22E 800 .548 -170.2 5.694 79.2 .036 47.2 .562 -33.5 1200 .550 -176.9 3.867 65.9 .046 48.7 .532 -37.3 1600 .562 166.4 2.946 53.6 .056 48.0 .539 -43.9 2000 .579 158.8 2.383 43.8 .067 47.2 .539 -56.9 2400 .601 150.8 2.010 32.1 .074 43.4 .537 -63.4 2800 .608 143.3 1.755 20.0 .083 39.7 .530 -73.5 3200 .643 137.0 1.505 10.4 .091 36.6 .553 -82.5 3600 .657 130.1 1.338 -.0 .098 33.5 .560 -94.1 4000 .654 129.7 1.188 -1.4 .104 36.2 .565 -99.8 4400 .648 124.6 1.017 -13.3 .107 32.5 .600 -112.7 4800 .665 120.1 .905 -23.4 .120 27.5 .648 -125.9 5000 .650 117.2 .849 -28.9 .121 24.4 .657 -133.0 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 3 Silicon Bipolar High fT Low Noise Microwave Transistors MP42141 Series Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 4 Silicon Bipolar High fT Low Noise Microwave Transistors MP42141 Series MP4214135 Micro-X Emitter F 4 PLCS. MP4214135 E H Collector Base B Emitter A C G D DIM. A B C D E F G H INCHES MIN. MAX. 0.092 0.108 0.079 0.087 0.070 0.019 0.025 0.018 0.022 0.150 0.003 0.006 45° MILLIMETERS MIN. MAX. 2.34 2.74 2.01 2.21 1.78 0.48 0.64 0.46 0.56 3.81 0.08 0.15 45° MP42141-509 TO-72 MP42141-509 INCHES DIM MIN. MAX. A B C D E F G H J K L 0.350 0.240 0.315 0.370 0.260 0.335 0.040 0.500 0.016 0.021 0.190 0.210 89 DEG 91 DEG 0.029 0.043 43 DEG 47 DEG 0.028 0.034 MILLIMETERS MIN. MAX. 8,89 6,11 8,00 12,70 0,41 0,53 4,83 5,33 89 DEG 91 DEG 0,74 1,09 43 DEG 47 DEG 0,71 0,86 Specification Subject to Change Without Notice M-Pulse Microwave____________________________________________________________________________________ 576 Charcot Avemue, San Jose, California 95131 Tel (408) 432-1480 Fax (408)) 432-3440 9,40 6,60 8,51 1,02 5