ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE DESCRIPTION The NE32484A is a pseudomorphic Hetero-Junction FET that uses the junction between Si-doped AlGaAs and undoped InGaAs to create very high mobility electrons. The device features mushroom shaped TiAl gates for decreased gate resistance and improved power handling capabilities. The mushroom gate also results in lower noise figure and high associated gain. This device is housed in an epoxy-sealed, metal/ceramic package and is intended for high volume consumer and industrial applications. Noise Figure, NF (dB) 1.2 21 GA 1 18 0.8 15 NF 0.6 12 0.4 9 0.2 6 0 Associated Gain, GA (dB) • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz 3 1 10 20 30 Frequency, f (GHz) NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER NE32484A PACKAGE OUTLINE SYMBOLS NFOPT 1 PARAMETERS AND CONDITIONS 84AS UNITS Noise Figure, VDS = 2.0 V, ID = 10 mA, f = 12 GHz dB GA Associated Gain, VDS = 2.0 V, ID = 10 mA, f = 12 GHz dB P1dB Output Power at 1 dB Gain Compression Point, f = 12 GHz VDS = 2.0 V, IDS = 10 mA VDS = 2.0 V, IDS = 20 mA 1 G1dB IDSS MIN 10.0 TYP MAX 0.6 0.7 11.0 dBm dBm 8.5 11.0 Gain at P1dB, f = 12 GHz VDS = 2.0 V, IDS = 10 mA VDS = 2.0 V, IDS = 20 mA dB dB 10.0 10.5 Saturated Drain Current, VDS = 2.0 V, VGS = 0 V mA 15 40 70 -0.2 VP Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA V -2.0 -0.8 gm Transconductance, VDS = 2.0 V, ID = 10 mA mS 45 60 µA 0.5 RTH (CH-A) Thermal Resistance (Channel to Ambient) °C/W 750 RTH (CH-C) Thermal Resistance (Channel to Case) °C/W IGSO Gate to Source Leakage Current, VGS = -3.0 V, ID = 0 mA 10.0 350 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not for each specimen. California Eastern Laboratories NE32484A ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS RATINGS VDS Drain to Source Voltage V 4.0 VGS Gate to Source Voltage V -3.0 IDS Drain Current mA IDSS IGRF Gate Current µA 200 TCH Channel Temperature °C 150 TSTG Storage Temperature °C -65 to +150 mW 165 Total Power Dissipation Note: 1. Operation in excess of anyone of these parameters may result in permanent damage. TYPICAL PERFORMANCE CURVES FREQ. (GHz) NFMIN (dB) 1.00 2.00 4.00 6.00 8.00 10.00 12.00 14.00 16.00 18.00 24.91 23.05 20.13 16.23 13.95 12.52 11.41 10.70 10.29 10.22 0.88 0.82 0.71 0.60 0.50 0.40 0.33 0.28 0.28 0.31 13.00 28.00 59.00 82.00 106.00 131.00 159.00 -166.00 -132.00 -104.00 Rn/50 0.30 0.31 0.32 0.37 0.43 0.51 0.60 0.72 0.86 1.00 0.33 0.31 0.26 0.20 0.13 0.09 0.06 0.05 0.04 0.04 NOISE FIGURE AND ASSOCIATED GAIN vs. DRAIN CURRENT VDS = 2 V, f = 12 GHz Noise Figure, NF (dB) Total Power Dissipation, PT (mW) ANG (TA = 25°C) 200 Infinite Heat sink 100 Free Air 50 0 1.4 14 1.2 13 12 1 NF 11 0.8 GA 0.6 10 0.4 9 0.2 8 7 0 0 25 50 75 100 125 150 175 0 200 5 10 20 15 30 25 Ambient Temperature, TA (°C) Drain Current, IDS (mA) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE TRANSCONDUCTANCE vs. DRAIN CURRENT 35 100 40 VGS (V) 0 30 -0.1 -0.2 20 -0.3 10 -0.4 Transconductance, gm (mS) 50 Drain Current, IDS (mA) MAG VC = 2 V, IDS =10 mA TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 ΓOPT GA (dB) 80 60 40 20 -0.5 0 0 0 1.5 Drain to Source Voltage, VDS (V) 3.0 0 5 10 15 20 25 30 35 Drain Current, IDS (mA) 40 45 50 Associated Gain, GA (dB) PT TYPICAL NOISE PARAMETERS (TA = 25˚C) NE32484A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) 1 .8 90˚ 1.5 .6 2 135˚ .4 45˚ 3 4 5 S22 18 GHz .2 S22 0.1 GHz 0 .2 .4 .6 .8 1 1.5 2 3 4 5 10 20 10 20 S11 18 GHz -20 -10 S11 0.1 GHz 180˚ S21 0.1 GHz S12 0.1 GHz -5 -4 -.2 2.5 -3 -.4 0.1 S21 18 GHz 0˚ S12 18 GHz 315˚ 225˚ -2 -.6 -.8 -1 5.0 -1.5 270˚ NE32484A VDS = 2 V, IDS = 10 mA FREQUENCY S11 S21 (GHz) MAG ANG 0.1 0.2 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.999 0.999 0.992 0.960 0.916 0.870 0.810 0.754 0.702 0.660 0.621 0.584 0.538 0.506 0.484 0.463 0.445 0.420 0.415 0.425 -1.8 -3.8 -18.2 -34.6 -50.5 -65.5 -80.0 -94.4 -107.9 -119.6 -131.2 -142.2 -154.6 -168.2 177.4 165.1 152.3 137.6 121.5 102.2 MAG 4.893 4.889 4.812 4.649 4.453 4.229 4.011 3.780 3.541 3.314 3.141 3.033 2.943 2.831 2.757 2.672 2.611 2.577 2.528 2.517 S12 S22 K ANG MAG ANG MAG ANG 178.2 176.2 161.6 145.5 129.8 114.9 100.8 87.0 74.4 62.4 51.1 40.1 28.7 17.3 6.1 -4.5 -16.0 -27.3 -39.3 -51.3 0.002 0.003 0.018 0.033 0.046 0.059 0.069 0.077 0.082 0.087 0.090 0.096 0.102 0.107 0.112 0.118 0.124 0.133 0.140 0.149 88.5 87.1 77.3 67.3 58.1 49.2 41.2 33.8 27.3 22.4 17.7 13.9 9.6 4.9 -0.0 -4.3 -9.3 -15.4 -22.7 -30.2 0.647 0.646 0.641 0.632 0.614 0.590 0.568 0.550 0.531 0.513 0.498 0.485 0.472 0.458 0.447 0.437 0.427 0.418 0.407 0.397 -0.9 -2.4 -12.6 -24.2 -35.1 -45.3 -55.1 -64.3 -73.5 -81.3 -88.4 -94.9 -101.8 -110.0 -119.0 -127.3 -135.9 -145.4 -156.6 -168.9 (dB) 0.071 0.053 0.101 0.213 0.313 0.398 0.502 0.594 0.688 0.774 0.861 0.909 0.964 1.005 1.014 1.027 1.033 1.019 1.002 0.945 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain MAG1 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| 33.885 32.121 24.271 21.488 19.859 18.554 17.644 16.910 16.353 15.808 15.428 14.996 14.602 13.809 13.179 12.551 12.126 12.029 12.288 12.277 NE32484A TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) 1 .8 90˚ 1.5 .6 2 135˚ .4 .2 4 5 S22 0.1 GHz 0 .2 .4 .6 .8 1 45˚ 3 S11 18 GHz 1.5 2 3 4 5 10 20 10 20 S22 18 GHz -20 -10 S11 0.1 GHz 180˚ S21 0.1 GHz -5 -4 -.2 2.5 -3 -.4 -.8 -1 S21 18 GHz 0˚ S12 18 GHz 315˚ 225˚ -2 -.6 0.1 S12 0.1 GHz 5.0 -1.5 270˚ NE32484A VDS = 2 V, IDS = 20 mA FREQUENCY S11 S21 S12 S22 K (GHz) MAG ANG MAG ANG MAG ANG MAG ANG 0.1 0.2 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0 18.0 0.999 0.999 0.986 0.950 0.903 0.848 0.786 0.727 0.676 0.628 0.587 0.551 0.514 0.477 0.456 0.437 0.420 0.392 0.393 0.404 -2.7 -3.9 -18.9 -35.9 -52.1 -67.4 -82.1 -96.4 -110.1 -121.5 -133.1 -143.7 -155.9 -169.9 175.8 163.6 150.6 135.6 119.7 100.5 5.59 5.57 5.47 5.26 5.01 4.70 4.41 4.12 3.85 3.59 3.37 3.24 3.11 3.00 2.91 2.82 2.75 2.70 2.65 2.63 177.2 175.6 160.9 144.2 128.3 113.1 98.9 85.1 72.4 60.7 49.4 38.4 27.3 16.2 5.20 -5.30 -16.6 -28.0 -39.7 -51.4 0.002 0.003 0.016 0.030 0.043 0.054 0.064 0.073 0.079 0.086 0.090 0.099 0.108 0.115 0.121 0.129 0.136 0.147 0.154 0.163 88.5 87.4 78.6 68.8 60.9 52.9 45.9 39.3 33.4 28.7 24.4 19.7 15.8 9.8 3.7 -1.4 -7.8 -14.2 -22.5 -30.8 0.560 0.559 0.550 0.538 0.526 0.515 0.503 0.492 0.480 0.468 0.457 0.445 0.434 0.422 0.410 0.399 0.387 0.376 0.364 0.352 -2.8 -4.0 -12.8 -23.8 -34.1 -43.8 -53.1 -62.0 -70.6 -78.0 -84.7 -90.9 -97.4 -105.2 -114.3 -122.4 -131.0 -140.7 -151.8 -163.8 (dB) 0.055 0.041 0.143 0.274 0.373 0.479 0.578 0.665 0.747 0.825 0.908 0.936 0.958 0.989 0.998 1.000 1.006 0.996 0.979 0.935 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain MAG1 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| 34.464 32.687 25.339 22.439 20.664 19.397 18.383 17.516 16.878 16.206 15.734 15.149 14.593 14.164 13.811 13.397 12.573 12.640 12.357 12.078 NE32484A OUTLINE DIMENSIONS (TA = 25ϒ⊗C) NE32484AS PACKAGE OUTLINE 84AS (Units in mm) ORDERING INFORMATION PART NUMBER NE32484AS NE32484A-T1 1.78 ± 0.2 QTY PACKAGE Bulk up to 1 K 84AS 1K/Reel 84AS Note: Long leaded (1.7 min.) 84A package available upon request in bulk quantities up to 1000 pcs. To order specify NE32484A-SL. S 1.78 ± 0.2 D T S G 0.5 ± 0.1 (ALL LEADS) 1.0 ±0.2 (ALL LEADS) 1.7 MAX +0.07 0.1 -0.03 Part Number Designator (Letter). When the letter is upright, the gate lead is to the right. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 11/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE