PRELIMINARY DATA SHEET C to KU BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET NE425S01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY FEATURES • SUPER LOW NOISE FIGURE: 0.60 dB TYP at 12 GHz 24 VDS = 2 V ID = 10 mA • HIGH ASSOCIATED GAIN: 12.0 dB TYP at f = 12 GHz • GATE LENGTH: ≤ 0.20 µm • GATE WIDTH: 200 µm • LOW COST PLASTIC PACKAGE DESCRIPTION Ga 16 The NE425S01 is a Hetero-Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and other commercial applications. NEC's stringent quality assurance and test procedures assure the highest reliability and performance. ELECTRICAL CHARACTERISTICS 1.0 12 0.5 8 NF 0 1 2 4 6 8 10 14 SYMBOLS CHARACTERISTICS UNITS MIN TYP MAX VDS Drain to Source Voltage V 2 3 10 20 ID Drain Current mA Pin Input Power dBm PARAMETERS AND CONDITIONS NE425S01 S01 UNITS MIN TYP MAX 0.60 0.80 GA1 Associated Gain, VDS = 2 V, ID = 10 mA, f = 12 GHz dB 10.5 12.0 gm Transconductance, VDS = 2 V, ID = 10 mA mS 45 60 Saturated Drain Current, VDS = 2 V, VGS = 0 V IGSO 0 (TA = 25°C) Noise Figure, VDS = 2 V, ID = 10 mA, f = 12 GHz IDSS 4 30 RECOMMENDED OPERATING CONDITIONS (TA = 25°C) NF1 VGS(off) 20 Frequency, f (GHz) PART NUMBER PACKAGE OUTLINE SYMBOLS Associated Gain, GA (dB) Noise Figure, NF (dB) 20 dB mA 20 60 90 Gate to Source Cutoff Voltage, VDS = 2 V, ID = 100 µA V -0.2 -0.7 -2.0 Gate to Source Leak Current, VGS = -3 V µA 0.5 10 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening tuned for the "generic" type but not each specimen. California Eastern Laboratories NE425S01 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) VDS UNITS RATINGS V 4.0 Drain to Source Voltage VGS V -3.0 ID Gate to Source Voltage Drain Current mA IDSS IG Gate Current µA 100 PT Total Power Dissipation mW 165 TCH Channel Temperature °C 125 Tstg Storage Temperature °C -65 to +125 VDS = 2V f = 12 GHz Note: 1. Operation in excess of any one of these parameters may result in permanent damage. 14 Ga 13 12 2.0 11 1.5 10 1.0 0.5 NF 0 10 20 30 Drain Current, ID (mA) TYPICAL PERFORMANCE CURVES (TA = 25°C) DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 250 100 200 80 Drain Current, ID (mA) Total Power Dissipation, PT (mW) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 150 100 50 VGS = 0 V 60 -0.2 V 40 -0.4 V 20 -0.6 V -0.8 V 0 50 100 150 200 250 0 1.5 3.0 Ambient Temperature, TA (°C) Drain to Source Voltage, VDS (V) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE MAXIMUM AVAILABLE GAIN, FORWARD INSERTION GAIN vs. FREQUENCY Maximum Stable Gain, MSG (dB) Maximum Available Gain, MAG (dB) Forward Insertion Gain, IS21Sl2 (dB) 24 Drain Current, ID (mA) VDS = 2 V 60 40 20 0 -2.0 -1.0 Gate to Source Voltage, VGS (V) 0 VDS = 2 V ID = 10 mA 20 MSG. MAG. 16 IS21sl 2 12 8 4 1 2 4 6 8 10 Frequency, f (GHz) 14 20 30 Associated Gain, GA (dB) PARAMETERS Noise Figure, NF (dB) SYMBOLS NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT NE425S01 TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) 90˚ 1 .8 1.5 .6 2 135˚ .4 .2 S22 18 GHz 0 .2 .4 .6 .8 1 1.5 4 5 S22 0.5 GHz 2 3 45˚ 3 S11 18 GHz 4 5 10 20 10 20 S12 0.5 GHz S11 0.5 GHz 180˚ -20 -10 S21 0.5 GHz -5 -4 -.2 0.025 0.050 2.000 -3 3.000 -.4 225˚ -2 -.6 -.8 -1 -1.5 0˚ 1.000 S12 S21 18 GHz 18 GHz 315˚ 4.000 Coordinates in Ohms Frequency in GHz VDS = 2 V, IDS = 10 mA 270˚ VDS = 2 V, ID = 10 mA FREQUENCY S11 (GHz) 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 14.00 15.00 16.00 17.00 18.00 MAG 0.998 0.991 0.983 0.973 0.963 0.952 0.936 0.918 0.896 0.864 0.830 0.796 0.762 0.731 0.703 0.675 0.647 0.624 0.597 0.571 0.536 0.501 0.474 0.454 0.440 0.432 0.430 0.442 0.466 0.514 0.592 S21 ANG -6.25 -12.36 -18.30 -24.28 -30.28 -36.31 -42.52 -48.91 -55.17 -61.77 -68.21 -74.65 -81.27 -87.80 -94.41 -101.21 -107.84 -114.92 -122.27 -130.41 -138.75 -147.71 -157.02 -167.49 -178.22 170.87 149.21 127.80 106.73 87.16 69.36 MAG 4.353 4.325 4.304 4.300 4.268 4.253 4.228 4.205 4.159 4.099 4.038 3.970 3.888 3.825 3.769 3.708 3.660 3.623 3.586 3.532 3.484 3.434 3.329 3.263 3.208 3.156 3.051 2.924 2.770 2.610 2.457 S12 ANG 172.87 166.07 159.56 152.97 146.39 139.87 133.14 126.39 119.62 112.65 105.96 99.70 93.42 87.11 81.02 75.10 68.76 62.69 56.50 49.97 43.60 37.56 31.21 25.00 18.95 13.02 -0.17 -13.75 -27.29 -40.28 -53.68 MAG 0.006 0.013 0.019 0.025 0.030 0.036 0.042 0.047 0.052 0.056 0.060 0.064 0.067 0.070 0.073 0.076 0.078 0.081 0.083 0.085 0.088 0.089 0.091 0.092 0.093 0.094 0.096 0.098 0.099 0.100 0.100 S22 ANG 85.38 81.34 77.34 73.13 68.91 65.00 60.80 56.72 52.48 48.56 44.48 40.77 37.05 33.52 30.04 26.89 23.80 20.66 17.61 14.41 11.15 7.98 4.74 1.38 -1.63 -4.93 -11.35 -18.32 -25.93 -33.90 -41.97 MAG 0.581 0.577 0.571 0.565 0.556 0.546 0.535 0.522 0.506 0.487 0.466 0.445 0.424 0.404 0.384 0.367 0.351 0.334 0.317 0.296 0.275 0.249 0.222 0.196 0.169 0.146 0.115 0.103 0.119 0.166 0.236 ANG -4.35 -8.60 -12.75 -16.87 -21.01 -25.10 -29.22 -33.29 -37.48 -41.54 -45.70 -49.87 -53.98 -58.13 -62.07 -66.26 -70.16 -73.96 -77.74 -81.66 -85.75 -90.60 -96.41 -102.92 -111.44 -122.20 -149.45 175.83 137.09 105.34 85.49 K MAG1 0.075 0.151 0.200 0.249 0.292 0.325 0.376 0.427 0.489 0.576 0.662 0.736 0.815 0.879 0.933 0.979 1.033 1.063 1.108 1.155 1.204 1.272 1.333 1.381 1.417 1.442 1.471 1.491 1.519 1.506 1.418 (dB) 28.606 25.220 23.551 22.355 21.531 20.724 20.029 19.517 19.030 18.645 18.280 17.926 17.637 17.375 17.129 16.883 15.596 14.973 14.357 13.796 13.247 12.728 12.179 11.816 11.536 11.314 10.957 10.603 10.216 9.963 10.061 Note: 1. Gain Calculation: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE425S01 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.001pF Ldx DRAIN Lgx GATE Q1 0.6nH Rdx 6 ohms Rgx 0.69nH 6 ohms CGS_PKG 0.07pF Lsx 0.07nH CDS_PKG 0.05PF Rsx 0.06 ohms SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameter Units Parameters Q1 Parameters Q1 VTO -0.8 RG 3 time seconds VTOSC 0 RD 2 capacitance farads henries ALPHA 8 RS 2 inductance BETA 0.103 RGMET 0 resistance ohms volts amps GAMMA 0.092 KF 0 voltage GAMMADC 0.08 AF 1 current Q 2 TNOM 27 DELTA 1 XTI 3 VBI 0.715 EG 1.43 IS 3e-13 VTOTC 0 N 1.22 BETATCE 0 RIS 0 FFE 1 RID 0 TAU 4e-12 CDS 0.13e-12 RDB 5000 CBS 1e-9 CGSO 0.3e-12 CGDO 0.02e-12 DELTA1 0.3 DELTA2 0.1 FC 0.5 VBR Infinity (1) Series IV Libra TOM Model MODEL RANGE Frequency: 0.1 to 18 GHz Bias: VDS = 1 V to 3 V, ID = 5 mA to 30 mA IDSS = 59.9 ma @ VGS = 0, VDS = 2 V Date: 2/98 NE425S01 TYPICAL NOISE PARAMETERS (TA = 25°C) OUTLINE DIMENSIONS (Units in mm) VDS = 2 V, ID = 10 mA PACKAGE OUTLINE S01 2.0 ± 0.2 0 2. 1 ± G 2.0 ± 0.2 0.5 TYP. 2 0. 2 4 ΓOPT FREQ. NFMIN GA (GHz) (dB) (dB) MAG ANG Rn/50 2 0.31 18.35 0.93 14 0.38 4 0.34 16.31 0.80 29 0.33 6 0.40 14.56 0.65 48 0.25 8 0.45 13.28 0.49 72 0.18 10 0.52 12.33 0.36 102 0.11 12 0.60 11.11 0.27 139 0.08 14 0.72 10.40 0.24 -176 0.07 16 0.86 9.86 0.30 -122 0.10 18 1.00 9.63 0.47 -58 0.22 3 0.65 TYP. 1.9 ± 0.2 1.6 1.5 MAX 1. 2. 3. 4. 0.125 ± 0.05 Source Drain Source Gate 0.4 MAX 4.0 ± 0.2 ORDERING INFORMATION PART NUMBER SUPPLY FORM PACKAGE OUTLINE NE425S01 NE425S01-T1 NE425S01-T1B Bulk Tape & Reel 1000 pcs./reel Tape & Reel 4000 pcs./reel S01 S01 S01 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -12/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE