D L to Ku Band Low Noise NE71383B N-Channel GaAs MESFET NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY FEATURES 2.5 • LOW NOISE FIGURE: NF = 0.6 dB typ at f = 4 GHz NF = 1.6 dB typ at f = 12 GHz 24 • HIGH ASSOCIATED GAIN: 14 dB typ at f = 4 GHz • GATE WIDTH: WG = 280 µm • GATE LENGTH: LG = 0.3 µm • EPITAXIAL TECHNOLOGY 2 20 1.5 16 GA 1.0 12 0.5 8 NF IN • LOW PHASE NOISE PERFORMANCE 0 1 DESCRIPTION 2 4 Associated Gain, GA (dB) Noise Figure, NF (dB) UE VDS = 3 V lD = 10 mA 4 6 8 10 14 20 30 Frequency, f (GHz) NT The NE71383B is a high performance GaAs MESFET providing a low noise figure and high associated gain through Kuband. This device features a recessed 0.3 micron gate and triple epitaxial technology, and is ideal for low phase noise oscillator and buffer amplifier applications. The NE71383B is housed in a hermetically sealed metal/ceramic package. SC O NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS PARAMETERS AND CONDITIONS NE71383B 83B UNITS Noise Figure , VDS = 3V, IDS = 10 mA, f = 4 GHz VDS = 3V, IDS = 10 mA, f = 12 GHz dB mS GA Associated Gain, VDS = 3V, IDS = 10 mA, f = 4 GHz VDS = 3V, IDS = 10 mA, f = 12 GHz dB dB P1dB Output Power at 1 dB Gain Compression Point, VDS = 3 V, IDS = 30 mA, f = 12 GHz DI NF IDSS gM IGSO VGS(off) RTH MIN 11.5 8.0 dBm TYP MAX 0.6 1.6 0.7 1.8 14.0 9.5 14.5 Saturated Drain Current, VDS = 3 V, VGS = 0 V mA 20 40 Transconductance, VDS = 3 V, IDS = 10 mA mS 20 50 Gate to Source Leakage Current, VGS = -5 V µA Gate to Source Cutoff Voltage, VDS = 3 V, IDS = 100 µA V Thermal Resistance (Channel to Case) °C/W -0.5 120 1.0 10 -1.1 -3.5 450 California Eastern Laboratories NE71383B ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) UNITS RATINGS GA (dB) (dB) MAG ANG Rn/50 2.0 0.55 17.0 0.81 37 0.57 3.0 0.58 15.2 0.75 53 0.51 -6.0 4.0 0.60 14.0 0.70 69 0.44 175 5.0 0.71 13.0 0.67 83 0.37 6.0 0.80 12.3 0.65 97 0.31 7.0 0.90 11.6 0.64 111 0.25 8.0 1.00 11.0 0.64 123 0.19 V 5.0 VGSO Gate to Source Voltage V –5.0 mA IDSS V VGDO Gate to Drain Voltage TCH °C Channel Temperature TSTG °C -65 to +175 mW 270 Storage Temperature PT Total Power Dissipation 9.0 1.15 10.4 0.64 136 0.14 10.0 1.30 10.0 0.64 148 0.10 11.0 1.45 9.5 0.64 161 0.06 12.0 1.60 9.0 0.63 173 0.05 13.0 1.75 8.6 0.62 -173 0.05 14.0 1.90 8.2 0.60 -159 0.08 15.0 2.04 8.0 0.57 -145 0.15 2.25 7.6 0.53 -129 0.23 Note: 1. Operation in excess of any one of these conditions may result in permanent damage. RECOMMENDED OPERATING CONDITIONS SYMBOLS PARAMETERS UNITS MIN VDS Drain to Source Voltage D NFOPT (GHz) Drain to Source Voltage Drain Current ΓOPT FREQ. VDS IDS VDS = 3 V, IDS = 10 mA UE PARAMETERS IN SYMBOLS TYPICAL NOISE PARAMETERS (TA = 25°C) TYP MAX V 3 4 16.0 10 30 17.0 2.38 7.3 0.46 -113 0.34 15 18.0 2.55 7.0 0.38 -95 0.44 ID Drain Current mA PIN Input Power dBm TYPICAL PERFORMANCE CURVES (TA = 25°C) 300 NE71383B 200 SC O Total Power Dissipation, PT (mW) 400 100 0 50 100 150 200 Ambient Temperature, TA (°C) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE 50 40 DI Drain Current, IDS (mA) VDS = 3 V 30 20 10 0 -2.0 -1.0 Drain to Source Voltage, VGS (V) 0 Drain Current, IDS (mA) NT TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE VGS = 0 V 40 -0.2 V 30 -0.4 V 20 -0.6 V 10 0 1 2 3 4 Drain to Source Voltage, VDS (V) 5 NE71383B TYPICAL COMMON SOURCE SCATTERING PARAMETERS (TA = 25°C) 1 .8 90˚ 1.5 .6 2 .4 135˚ 45˚ 3 4 5 S22 0 .2 .4 .6 .8 1 1.5 2 3 4 5 10 20 10 20 S12 S11 .025 180˚ -20 -10 S21 UE 3.000 -2 -1 -1.5 270˚ VD = 3 V, IDS = 10 mA S11 S12 MAG ANG MAG ANG 1.001 0.997 0.987 0.977 0.963 0.949 0.934 0.912 0.890 0.864 0.835 0.808 0.785 0.766 0.752 0.739 0.730 0.714 0.704 0.690 0.675 0.661 0.648 0.639 0.639 0.637 0.634 0.629 0.621 0.608 0.598 0.585 0.576 0.571 0.567 0.566 0.568 -2.14 -10.89 -21.63 -32.12 -42.61 -53.03 -63.35 -73.70 -83.94 -93.86 -103.65 -112.98 -121.98 -130.87 -139.43 -147.72 -155.90 -163.63 -171.19 -178.78 173.92 166.65 159.39 152.99 146.35 139.92 133.24 126.90 120.42 114.04 107.64 101.18 94.99 89.08 83.11 77.63 72.06 3.230 3.230 3.198 3.165 3.131 3.084 3.033 2.971 2.900 2.809 2.716 2.626 2.540 2.450 2.374 2.297 2.222 2.143 2.076 2.000 1.909 1.840 1.774 1.700 1.646 1.598 1.550 1.499 1.453 1.401 1.357 1.320 1.282 1.249 1.218 1.193 1.179 178.00 169.69 159.56 149.72 139.95 130.17 120.45 110.66 101.02 91.47 82.14 73.20 64.80 56.31 47.88 39.58 31.56 23.28 15.25 7.23 -0.71 -8.30 -15.57 -21.98 -29.27 -36.37 -43.53 -50.71 -57.91 -64.75 -71.74 -78.79 -85.50 -91.80 -98.38 -104.91 -111.27 MAG SC O DI S22 0.002 0.011 0.022 0.032 0.043 0.052 0.060 0.068 0.074 0.080 0.084 0.087 0.090 0.092 0.093 0.093 0.094 0.093 0.093 0.092 0.091 0.089 0.088 0.087 0.086 0.085 0.085 0.084 0.085 0.085 0.086 0.086 0.087 0.089 0.090 0.093 0.096 ANG 87.30 81.94 74.10 66.76 59.19 51.65 44.49 37.23 30.07 23.11 16.62 10.30 4.36 -1.43 -6.91 -12.26 -17.22 -21.98 -26.66 -31.23 -35.42 -39.35 -42.96 -46.30 -49.43 -52.43 -55.47 -58.63 -61.82 -65.09 -68.61 -72.28 -75.68 -79.08 -82.47 -85.99 -89.67 MAG NT (GHz) S21 0.705 0.702 0.695 0.687 0.678 0.667 0.653 0.638 0.622 0.603 0.583 0.564 0.549 0.537 0.529 0.524 0.525 0.526 0.529 0.532 0.535 0.539 0.545 0.556 0.568 0.585 0.603 0.621 0.638 0.649 0.658 0.664 0.670 0.678 0.688 0.701 0.717 K MAG1 -0.060 0.061 0.127 0.158 0.196 0.231 0.262 0.311 0.359 0.417 0.487 0.555 0.607 0.655 0.694 0.737 0.755 0.817 0.850 0.913 0.992 1.074 1.140 1.193 1.204 1.206 1.192 1.205 1.194 1.244 1.269 1.329 1.357 1.340 1.327 1.249 1.138 32.088 24.678 21.625 19.952 18.622 17.731 17.037 16.404 15.932 15.455 15.097 14.798 14.506 14.254 14.070 13.927 13.736 13.625 13.487 13.372 13.218 11.493 10.772 10.254 10.087 10.000 9.961 9.781 9.667 9.192 8.862 8.430 8.114 7.987 7.893 8.075 8.635 ANG IN FREQUENCY 0˚ 315˚ 225˚ -.8 .075 2.000 -3 -.4 -.6 .050 1.000 -5 -4 -.2 0.10 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 D .2 -1.39 -7.48 -14.99 -22.34 -29.71 -37.07 -44.51 -52.08 -59.69 -67.53 -75.33 -83.34 -91.44 -99.73 -107.98 -116.19 -124.33 -132.32 -140.37 -148.27 -156.31 -164.00 -171.63 -179.03 173.97 167.46 161.35 155.40 149.95 144.57 139.23 134.14 128.95 123.94 119.40 114.96 110.87 (dB) Notes: 1.Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE71383B TYPICAL SCATTERING PARAMETERS (TA = 25°C) 1 .8 90˚ 1.5 .6 2 135˚ .4 45˚ 3 4 5 S22 0 .2 .4 .6 .8 1 1.5 2 3 4 5 180˚ S11 10 20 S12 S21 10 20 D .2 .025 .050 .075 -20 -10 2.000 -.8 -1 -1.5 FREQUENCY S11 S21 S12 S22 K ANG MAG ANG MAG ANG MAG ANG 1.001 0.997 0.985 0.973 0.957 0.940 0.921 0.897 0.872 0.843 0.813 0.786 0.762 0.744 0.729 0.716 0.707 0.691 0.681 0.667 0.652 0.638 0.626 0.617 0.616 0.614 0.611 0.604 0.595 0.581 0.570 0.556 0.547 0.542 0.536 0.534 0.534 -2.26 -11.39 -22.63 -33.57 -44.49 -55.30 -65.94 -76.59 -87.05 -97.16 -107.09 -116.54 -125.62 -134.59 -143.20 -151.52 -159.71 -167.44 -174.99 177.44 170.14 162.87 155.54 149.12 142.52 136.10 129.41 123.13 116.67 110.37 104.05 97.62 91.51 85.69 79.74 74.37 68.95 3.856 3.845 3.799 3.749 3.693 3.623 3.545 3.455 3.355 3.234 3.112 2.996 2.887 2.776 2.682 2.588 2.497 2.403 2.324 2.235 2.133 2.055 1.980 1.898 1.838 1.784 1.729 1.671 1.619 1.560 1.510 1.468 1.425 1.388 1.353 1.325 1.307 177.97 169.36 158.95 148.84 138.84 128.88 119.01 109.14 99.47 89.95 80.68 71.83 63.54 55.15 46.82 38.64 30.74 22.57 14.65 6.79 -1.00 -8.49 -15.66 -22.03 -29.29 -36.37 -43.52 -50.70 -57.89 -64.75 -71.71 -78.73 -85.44 -91.76 -98.43 -105.03 -111.50 0.002 0.010 0.020 0.029 0.038 0.046 0.054 0.060 0.066 0.070 0.074 0.077 0.079 0.081 0.082 0.083 0.083 0.083 0.084 0.084 0.083 0.083 0.083 0.083 0.083 0.083 0.084 0.085 0.086 0.088 0.090 0.091 0.093 0.094 0.097 0.100 0.103 85.09 82.02 74.19 66.92 59.46 52.14 45.23 38.23 31.47 24.96 18.97 13.18 7.81 2.63 -2.23 -6.93 -11.25 -15.39 -19.45 -23.41 -27.03 -30.53 -33.73 -36.77 -39.73 -42.65 -45.69 -48.97 -52.39 -55.97 -59.88 -63.97 -67.78 -71.67 -75.57 -79.66 -83.80 0.664 0.660 0.653 0.645 0.635 0.623 0.609 0.593 0.576 0.557 0.538 0.519 0.504 0.493 0.486 0.482 0.483 0.485 0.489 0.493 0.497 0.503 0.510 0.522 0.536 0.554 0.573 0.592 0.610 0.622 0.633 0.641 0.649 0.658 0.669 0.683 0.700 -1.46 -7.51 -15.03 -22.39 -29.74 -37.08 -44.41 -51.88 -59.36 -67.04 -74.69 -82.59 -90.60 -98.82 -107.02 -115.15 -123.24 -131.18 -139.19 -147.05 -155.06 -162.73 -170.38 -177.80 175.18 168.69 162.62 156.70 151.32 146.02 140.71 135.66 130.49 125.48 120.97 116.55 112.50 SC O NT IN MAG DI 315˚ 270˚ VD = 3 V, IDS = 20 mA 0.10 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 3.000 225˚ -2 (GHz) UE -3 -.4 -.6 0˚ 1.000 -5 -4 -.2 0.100 -0.031 0.060 0.141 0.179 0.222 0.262 0.300 0.355 0.408 0.480 0.552 0.621 0.684 0.731 0.775 0.814 0.846 0.905 0.931 0.989 1.075 1.135 1.188 1.230 1.231 1.221 1.195 1.186 1.182 1.203 1.210 1.248 1.254 1.255 1.219 1.154 1.063 MAG1 (dB) 32.851 25.849 22.786 21.115 19.876 18.963 18.172 17.603 17.061 16.646 16.238 15.901 15.628 15.349 15.146 14.939 14.783 14.617 14.420 14.250 12.433 11.706 11.152 10.699 10.555 10.487 10.463 10.324 10.169 9.767 9.478 9.081 8.820 8.655 8.622 8.841 9.496 Notes: 1.Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE71383B TYPICAL SCATTERING PARAMETERS (TA = 25°C) 1 .8 90˚ 1.5 .6 2 135˚ .4 45˚ 3 4 5 S21 10 20 0 .2 .4 .6 .8 1 1.5 2 3 -2 -1 -1.5 S11 3.000 S21 S12 S22 K ANG MAG ANG MAG ANG MAG ANG 1.000 0.996 0.987 0.974 0.958 0.935 0.911 0.882 0.852 0.814 0.775 0.745 0.724 0.706 0.694 0.689 0.688 0.683 0.679 0.679 0.679 0.681 0.685 0.695 0.707 0.715 0.723 0.720 0.719 0.716 0.707 0.697 0.697 0.706 0.711 0.706 0.710 -2.28 -11.29 -22.92 -34.10 -45.19 -57.01 -69.44 -81.79 -93.85 -106.29 -119.11 -131.62 -143.56 -155.30 -166.88 -178.03 171.13 160.57 151.06 142.40 134.32 126.52 119.38 113.23 107.53 102.29 96.42 90.80 86.16 82.50 78.94 74.87 70.94 68.62 66.93 64.06 60.15 3.808 3.804 3.781 3.746 3.722 3.693 3.645 3.567 3.481 3.364 3.240 3.113 2.992 2.860 2.735 2.609 2.486 2.356 2.221 2.093 1.963 1.864 1.763 1.667 1.584 1.510 1.445 1.371 1.296 1.226 1.168 1.127 1.087 1.049 1.026 1.017 1.020 177.83 169.37 158.72 148.29 138.01 127.43 116.64 105.90 95.44 84.79 74.20 64.08 54.70 45.24 35.61 26.25 16.98 7.58 -1.07 -9.33 -17.41 -25.44 -32.78 -39.42 -46.72 -54.01 -61.11 -68.56 -75.34 -81.59 -87.90 -94.19 -100.28 -105.05 -110.80 -116.96 -123.51 0.002 0.010 0.019 0.028 0.037 0.045 0.053 0.059 0.065 0.070 0.073 0.076 0.077 0.078 0.078 0.078 0.078 0.077 0.076 0.075 0.074 0.073 0.071 0.070 0.069 0.068 0.069 0.070 0.070 0.070 0.071 0.072 0.073 0.074 0.075 0.078 0.083 92.50 82.15 74.62 67.04 59.29 52.01 44.39 36.63 29.10 21.86 14.82 8.09 1.84 -4.10 -9.64 -14.94 -19.89 -24.71 -28.84 -32.87 -36.83 -40.71 -43.87 -46.77 -49.31 -51.91 -54.19 -56.99 -60.82 -64.39 -68.22 -71.51 -75.00 -78.24 -81.20 -84.63 -88.75 0.660 0.657 0.652 0.643 0.633 0.619 0.603 0.586 0.566 0.544 0.519 0.495 0.473 0.455 0.444 0.439 0.439 0.443 0.451 0.456 0.464 0.472 0.482 0.494 0.510 0.533 0.557 0.583 0.607 0.627 0.643 0.656 0.666 0.676 0.690 0.709 0.728 -1.60 -7.34 -14.61 -21.85 -29.16 -36.62 -44.16 -51.76 -59.54 -67.41 -75.62 -84.09 -92.51 -101.69 -110.69 -120.04 -129.02 -137.90 -146.73 -155.17 -163.64 -171.91 -179.93 172.40 165.44 158.79 152.66 147.12 141.60 136.93 132.24 127.86 123.95 120.28 116.91 113.83 110.79 SC O NT IN MAG DI 315˚ 270˚ VD = 4 V, IDS = 30 mA FREQUENCY 0˚ UE 225˚ -.4 -.8 .075 2.000 -3 -.6 .050 1.000 -5 -4 -.2 0.10 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 10.50 11.00 11.50 12.00 12.50 13.00 13.50 14.00 14.50 15.00 15.50 16.00 16.50 17.00 17.50 18.00 .025 -20 -10 S22 (GHz) S12 180˚ S11 4 5 D .2 -0.045 0.077 0.130 0.182 0.230 0.286 0.332 0.397 0.458 0.543 0.640 0.715 0.785 0.852 0.912 0.952 0.980 1.040 1.103 1.169 1.243 1.299 1.373 1.397 1.391 1.377 1.299 1.285 1.291 1.319 1.359 1.393 1.386 1.327 1.250 1.140 0.944 MAG1 (dB) 32.797 25.802 22.989 21.264 20.026 19.142 18.374 17.815 17.288 16.818 16.472 16.124 15.895 15.643 15.449 15.244 15.034 13.631 12.703 11.970 11.270 10.792 10.307 10.017 9.882 9.803 9.929 9.712 9.436 9.051 8.582 8.211 8.028 8.094 8.352 8.880 10.895 Notes: 1.Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE71383B NONLINEAR MODEL FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameter Units Q1 Parameters Q1 VTO -1.04 RG 6 time seconds VTOSC 0 RD 2 capacitance farads 2 inductance ALPHA 4.5 RS BETA 0.0409 RGMET 0 resistance GAMMA 0.076 KF 0 voltage GAMMADC 0.05 AF 1 current TNOM 27 XTI 3 VBI 1 EG 1.43 IS 7.3e-12 VTOTC 0 N 1.2 BETATCE 0 RIS 0 FFE 1 0 6e-12 CDS 0.25e-12 RDB 2000 CBS 1e-9 CGSO 0.5e-12 CGDO 0.04e-12 DELTA 1 0.3 DELTA 2 0.2 FC 0.5 VBR Infinity Frequency: Bias: Date: DI SC O (1) Series IV Libra TOM Model MODEL RANGE NT RID TAU ohms volts UE 1.9 0.42 henries amps 0.1 to 18 GHz VDS = 2 V to 4 V, ID = 10 mA to 30 mA IDSS = 45.56 mA @ VGS = 0, VDS = 3 V 1/98 IN Q DELTA D Parameters NE71383B NONLINEAR MODEL D SCHEMATIC CGD_PKG 1 ohm LG_PKG 0.32nH Q1 LG 0.14nH LD LD_PKG 0.28nH 0.26nH IN RG_PKG GATE UE 0.001pF RD_PKG 0.4 ohms CCD_PKG 0.1pF LS_PKG 0.04nH CSG_PKG DI SC O 0.01pF NT CCG_PKG 0.1pF RS_PKG 0.02 ohms CSD_PKG 0.01pF SOURCE MODEL RANGE Frequency: Bias: Date: 0.1 to 18 GHz VDS = 2 V to 4 V, ID = 10 mA to 30 mA IDSS = 45.56 mA @ VGS = 0, VDS = 3 V 1/98 DRAIN NE71383B ORDERING INFORMATION OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 83B PART NUMBER IDSS (mA) PACKAGE OUTLINE NE71383B 20 to 120 83B 1.88 ± 0.3 1 D S 0.5 ± 0.1 G D 2 4 UE 1.88 ± 0.3 4.0 MIN (ALL LEADS) 3 S 1.0 ± 0.1 1.45 MAX +0.07 0.1 -0.03 SC O NT IN Source Drain Source Gate DI 1. 2. 3. 4. EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM PRINTED IN USA ON RECYCLED PAPER -8/98 DATA SUBJECT TO CHANGE WITHOUT NOTICE