DATA SHEET MOS FIELD EFFECT TRANSISTOR NP82N06PLG SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER LEAD PLATING NP82N06PLG-E1-AY Note NP82N06PLG-E2-AY Note Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZP) Note Pb-free (This product does not contain Pb in the external electrode.) FEATURES (TO-263) • Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A) • Low input capacitance Ciss = 5700 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 60 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±82 A ID(pulse) ±270 A Drain Current (pulse) Note1 Total Power Dissipation (TC = 25°C) PT1 143 W Total Power Dissipation (TA = 25°C) PT2 1.8 W Channel Temperature Tch 175 °C Tstg −55 to +175 °C Repetitive Avalanche Current Note2 IAR 37 A Repetitive Avalanche Energy Note2 EAR 137 mJ Storage Temperature Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1% 2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH THERMAL RESISTANCE Channel to Case Thermal Resistance Rth(ch-C) 1.05 °C/W Channel to Ambient Thermal Resistance Rth(ch-A) 83.3 °C/W The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D18777EJ1V0DS00 (1st edition) Date Published June 2007 NS Printed in Japan 2007 NP82N06PLG ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT IDSS VDS = 60 V, VGS = 0 V 1 μA IGSS VGS = ±20 V, VDS = 0 V ±10 μA VGS(th) VDS = VGS, ID = 250 μA 1.5 2.0 2.5 V | yfs | VDS = 10 V, ID = 41 A 19 40 RDS(on)1 VGS = 10 V, ID = 41 A 5.1 6.7 mΩ RDS(on)2 VGS = 5 V, ID = 41 A 6.4 8.5 mΩ Input Capacitance Ciss VDS = 25 V, 5700 8550 pF Output Capacitance Coss VGS = 0 V, 420 630 pF Reverse Transfer Capacitance Crss f = 1 MHz 275 500 pF Turn-on Delay Time td(on) VDD = 30 V, ID = 41 A, 28 70 ns Rise Time tr VGS = 10 V, 22 60 ns Turn-off Delay Time td(off) RG = 0 Ω 79 160 ns Fall Time tf 9 30 ns Total Gate Charge QG VDD = 48 V, 106 160 nC Gate to Source Charge QGS VGS = 10 V, 29 nC QGD ID = 82 A 35 nC VF(S-D) IF = 82 A, VGS = 0 V 0.9 Reverse Recovery Time trr IF = 82 A, VGS = 0 V, 43 ns Reverse Recovery Charge Qrr di/dt = 100 A/μs 65 nC Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Threshold Voltage Forward Transfer Admittance Note Note Drain to Source On-state Resistance Note Gate to Drain Charge Body Diode Forward Voltage Note S 1.5 V Note Pulsed TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 Ω D.U.T. L 50 Ω PG. VGS = 20 → 0 V TEST CIRCUIT 2 SWITCHING TIME RL RG PG. VDD VGS VGS Wave Form 0 VGS 10% 90% VDD VDS 90% IAS VDS ID VDS τ τ = 1 μs Duty Cycle ≤ 1% TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = 2 mA PG. 2 50 Ω 0 10% 10% tr td(off) Wave Form VDD Starting Tch 90% VDS VGS 0 BVDSS RL VDD Data Sheet D18777EJ1V0DS td(on) ton tf toff NP82N06PLG TYPICAL CHARACTERISTICS (TA = 25°C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 140 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % 160 100 80 60 40 20 120 100 80 60 40 20 0 0 0 25 50 75 100 125 150 175 0 25 TC - Case Temperature - °C 50 75 100 125 150 175 TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 100 R n (o DS (V ) GS ID(pulse) d it e Li m V ) i0 1 = PW =1 i0 ID(DC) 0 μs 1i DC i m s m i D er 10 1i 0 w Po s ip i ss io at 1 d it e im nL TC = 25°C Single Pulse 0.1 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 100 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A 1000 Rth(ch-A) = 83.3°C/Wi 10 1 Rth(ch-C) = 1.05°C/Wi 0.1 Single Pulse 0.01 100μ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D18777EJ1V0DS 3 NP82N06PLG DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 300 1000 VDS = 10 V Pulsed VGS = 10 V ID - Drain Current - A ID - Drain Current - A 100 5V 200 100 10 TA = 175°C 150°C 125°C 85°C 1 0.1 25°C −25°C −55°C 0.01 Pulsed 0.001 0 0 2 4 6 8 0 10 VDS - Drain to Source Voltage - V 2.5 2 1.5 1 VDS = VGS ID = 250 μA 0 -100 -50 0 50 100 150 2 100 TA = −55°C −25°C 25°C 10 0.1 1 10 8 VGS = 5 V 10 V Pulsed 0 10 100 1000 ID - Drain Current - A 4 10 100 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE RDS(on) - Drain to Source On-state Resistance - mΩ RDS(on) - Drain to Source On-state Resistance - mΩ 12 1 85°C 125°C 150°C 175°C ID - Drain Current - A 14 2 5 1 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4 4 VDS = 10 V Pulsed Tch - Channel Temperature - °C 6 3 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT | yfs | - Forward Transfer Admittance - S VGS(th) - Gate to Source Threshold Voltage - V GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 0.5 1 VGS - Gate to Source Voltage - V 14 12 10 ID = 82 A 41 A 8 6 4 16.4 A 2 Pulsed 0 0 5 10 15 VGS - Gate to Source Voltage - V Data Sheet D18777EJ1V0DS 20 NP82N06PLG CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 14 10000 ID = 41 A Pulsed VGS = 5 V 10 8 6 10 V 4 2 0 -100 Ciss Coss 1000 Crss VGS = 0 V f = 1 MHz 100 -50 0 50 100 150 200 0.1 Tch - Channel Temperature - °C 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 1000 12 60 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 10 VDS - Drain to Source Voltage - V SWITCHING CHARACTERISTICS td(off) 100 td(on) tr 10 tf VDD = 30 V VGS = 10 V RG = 0 Ω VDD = 48 V 30 V 12 V 50 40 30 10 8 6 VGS 4 20 VDS 10 2 ID = 82 A 1 0 0.1 1 10 100 0 ID - Drain Current - A 20 40 60 80 100 0 120 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 VGS = 10 V 100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1 5V 0V 10 1 0.1 Pulsed 0.01 di/dt = 100 A/μs VGS = 0 V 10 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V Data Sheet D18777EJ1V0DS 1 10 100 IF - Diode Forward Current - A 5 VGS - Gate to Source Voltage - V 12 Ciss, Coss, Crss - Capacitance - pF RDS(on) - Drain to Source On-state Resistance - mΩ DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE NP82N06PLG PACKAGE DRAWING (Unit: mm) 10.0 ±0.3 7.88 MIN. 4.45 ±0.2 1.3 ±0.2 0.5 9.15 ±0.3 8.0 TYP. 4 15.25 ±0.5 No plating 1.35 ±0.3 TO-263 (MP-25ZP) 0.025 to 0.25 .2 0 to 8 ˚ 0.25 1 2 3 2.5 2.54 1. Gate 2. Drain 3. Source 4. Fin (Drain) 2.54 ±0.25 0.6 ±0 0.75 ±0.2 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D18777EJ1V0DS NP82N06PLG TAPE INFORMATION There are two types (-E1, -E2) of taping depending on the direction of the device. Draw-out side Reel side MARKING INFORMATION NEC 82N06 LG Pb-free plating marking Abbreviation of part number Lot code RECOMMENDED SOLDERING CONDITIONS The NP82N06PLG should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html) Soldering Method Infrared reflow Soldering Conditions Maximum temperature (Package's surface temperature): 260°C or below Recommended Condition Symbol IR60-00-3 Time at maximum temperature: 10 seconds or less Time of temperature higher than 220°C: 60 seconds or less Preheating time at 160 to 180°C: 60 to 120 seconds Maximum number of reflow processes: 3 times Maximum chlorine content of rosin flux (percentage mass): 0.2% or less Partial heating Maximum temperature (Pin temperature): 350°C or below P350 Time (per side of the device): 3 seconds or less Maximum chlorine content of rosin flux: 0.2% (wt.) or less Caution Do not use different soldering methods together (except for partial heating). Data Sheet D18777EJ1V0DS 7 NP82N06PLG • The information in this document is current as of June, 2007. The information is subject to change without notice. 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