NEC NP82N06PLG-E1-AY

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP82N06PLG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
LEAD PLATING
NP82N06PLG-E1-AY
Note
NP82N06PLG-E2-AY
Note
Pure Sn (Tin)
PACKING
Tape
800 p/reel
PACKAGE
TO-263 (MP-25ZP)
Note Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
(TO-263)
• Super low on-state resistance
RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A)
RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
• Low input capacitance
Ciss = 5700 pF TYP.
• Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
60
V
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±82
A
ID(pulse)
±270
A
Drain Current (pulse)
Note1
Total Power Dissipation (TC = 25°C)
PT1
143
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Tstg
−55 to +175
°C
Repetitive Avalanche Current
Note2
IAR
37
A
Repetitive Avalanche Energy
Note2
EAR
137
mJ
Storage Temperature
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Tch ≤ 150°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
1.05
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18777EJ1V0DS00 (1st edition)
Date Published June 2007 NS
Printed in Japan
2007
NP82N06PLG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
IDSS
VDS = 60 V, VGS = 0 V
1
μA
IGSS
VGS = ±20 V, VDS = 0 V
±10
μA
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
V
| yfs |
VDS = 10 V, ID = 41 A
19
40
RDS(on)1
VGS = 10 V, ID = 41 A
5.1
6.7
mΩ
RDS(on)2
VGS = 5 V, ID = 41 A
6.4
8.5
mΩ
Input Capacitance
Ciss
VDS = 25 V,
5700
8550
pF
Output Capacitance
Coss
VGS = 0 V,
420
630
pF
Reverse Transfer Capacitance
Crss
f = 1 MHz
275
500
pF
Turn-on Delay Time
td(on)
VDD = 30 V, ID = 41 A,
28
70
ns
Rise Time
tr
VGS = 10 V,
22
60
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
79
160
ns
Fall Time
tf
9
30
ns
Total Gate Charge
QG
VDD = 48 V,
106
160
nC
Gate to Source Charge
QGS
VGS = 10 V,
29
nC
QGD
ID = 82 A
35
nC
VF(S-D)
IF = 82 A, VGS = 0 V
0.9
Reverse Recovery Time
trr
IF = 82 A, VGS = 0 V,
43
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
65
nC
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Note
Drain to Source On-state Resistance
Note
Gate to Drain Charge
Body Diode Forward Voltage
Note
S
1.5
V
Note Pulsed
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D18777EJ1V0DS
td(on)
ton
tf
toff
NP82N06PLG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
140
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
160
100
80
60
40
20
120
100
80
60
40
20
0
0
0
25
50
75
100
125
150
175
0
25
TC - Case Temperature - °C
50
75
100
125 150
175
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
100
R
n
(o
DS
(V
)
GS
ID(pulse)
d
it e
Li m V )
i0
1
=
PW
=1
i0
ID(DC)
0
μs
1i
DC
i
m
s
m
i
D
er
10
1i 0
w
Po
s
ip
i ss
io
at
1
d
it e
im
nL
TC = 25°C
Single Pulse
0.1
0.1
1
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
1000
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 1.05°C/Wi
0.1
Single Pulse
0.01
100μ
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D18777EJ1V0DS
3
NP82N06PLG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
300
1000
VDS = 10 V
Pulsed
VGS = 10 V
ID - Drain Current - A
ID - Drain Current - A
100
5V
200
100
10
TA = 175°C
150°C
125°C
85°C
1
0.1
25°C
−25°C
−55°C
0.01
Pulsed
0.001
0
0
2
4
6
8
0
10
VDS - Drain to Source Voltage - V
2.5
2
1.5
1
VDS = VGS
ID = 250 μA
0
-100
-50
0
50
100
150
2
100
TA = −55°C
−25°C
25°C
10
0.1
1
10
8
VGS = 5 V
10 V
Pulsed
0
10
100
1000
ID - Drain Current - A
4
10
100
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
RDS(on) - Drain to Source On-state Resistance - mΩ
RDS(on) - Drain to Source On-state Resistance - mΩ
12
1
85°C
125°C
150°C
175°C
ID - Drain Current - A
14
2
5
1
200
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
4
4
VDS = 10 V
Pulsed
Tch - Channel Temperature - °C
6
3
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
VGS(th) - Gate to Source Threshold Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
0.5
1
VGS - Gate to Source Voltage - V
14
12
10
ID = 82 A
41 A
8
6
4
16.4 A
2
Pulsed
0
0
5
10
15
VGS - Gate to Source Voltage - V
Data Sheet D18777EJ1V0DS
20
NP82N06PLG
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
14
10000
ID = 41 A
Pulsed
VGS = 5 V
10
8
6
10 V
4
2
0
-100
Ciss
Coss
1000
Crss
VGS = 0 V
f = 1 MHz
100
-50
0
50
100
150
200
0.1
Tch - Channel Temperature - °C
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
12
60
VDS - Drain to Source Voltage - V
td(on), tr, td(off), tf - Switching Time - ns
10
VDS - Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
td(off)
100
td(on)
tr
10
tf
VDD = 30 V
VGS = 10 V
RG = 0 Ω
VDD = 48 V
30 V
12 V
50
40
30
10
8
6
VGS
4
20
VDS
10
2
ID = 82 A
1
0
0.1
1
10
100
0
ID - Drain Current - A
20
40
60
80
100
0
120
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
100
VGS = 10 V
100
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
1
5V
0V
10
1
0.1
Pulsed
0.01
di/dt = 100 A/μs
VGS = 0 V
10
0
0.5
1
1.5
VF(S-D) - Source to Drain Voltage - V
Data Sheet D18777EJ1V0DS
1
10
100
IF - Diode Forward Current - A
5
VGS - Gate to Source Voltage - V
12
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
NP82N06PLG
PACKAGE DRAWING (Unit: mm)
10.0 ±0.3
7.88 MIN.
4.45 ±0.2
1.3 ±0.2
0.5
9.15 ±0.3
8.0 TYP.
4
15.25 ±0.5
No plating
1.35 ±0.3
TO-263 (MP-25ZP)
0.025
to 0.25
.2
0 to 8
˚
0.25
1 2
3
2.5
2.54
1. Gate
2. Drain
3. Source
4. Fin (Drain)
2.54 ±0.25
0.6 ±0
0.75 ±0.2
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
6
Data Sheet D18777EJ1V0DS
NP82N06PLG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
82N06
LG
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP82N06PLG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Infrared reflow
Soldering Conditions
Maximum temperature (Package's surface temperature): 260°C or below
Recommended
Condition Symbol
IR60-00-3
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
P350
Time (per side of the device): 3 seconds or less
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D18777EJ1V0DS
7
NP82N06PLG
• The information in this document is current as of June, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may
appear in this document.
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• Descriptions of circuits, software and other related information in this document are provided for illustrative
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The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC
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(2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as
defined above).
M8E 02. 11-1