DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3638 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3638 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and PART NUMBER PACKAGE 2SK3638-ZK TO-252 (MP-3ZK) designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES (TO-252) • Low on-state resistance RDS(on)1 = 8.5 mΩ MAX. (VGS = 10 V, ID = 32 A) RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 18 A) • Low Ciss: Ciss = 1100 pF TYP. • Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS 20 V Gate to Source Voltage (VDS = 0 V) VGSS ±20 V Drain Current (DC) (TC = 25°C) ID(DC) ±64 A ID(pulse) ±220 A Total Power Dissipation (TC = 25°C) PT1 36 W Total Power Dissipation PT2 1.0 W Channel Temperature Tch 150 °C Storage Temperature Tstg –55 to +150 °C Drain Current (pulse) Note Note PW ≤ 10 µs, Duty Cycle ≤ 1% The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D15966EJ3V0DS00 (3rd edition) Date Published January 2005 NS CP(K) Printed in Japan The mark shows major revised points. 2002 2SK3638 ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Zero Gate Voltage Drain Current IDSS VDS = 20 V, VGS = 0 V 10 µA Gate Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±10 µA VGS(off) VDS = 10 V, ID = 1 mA 1.5 2.5 V | yfs | VDS = 10 V, ID = 32 A 12 RDS(on)1 VGS = 10 V, ID = 32 A 6.8 8.5 mΩ RDS(on)2 VGS = 4.5 V, ID = 18 A 10 15 mΩ Gate Cut-off Voltage Forward Transfer Admittance Note Drain to Source On-state Resistance Note Input Capacitance 25 S Ciss VDS = 10 V 1100 pF Coss VGS = 0 V 450 pF Reverse Transfer Capacitance Crss f = 1 MHz 170 pF Turn-on Delay Time td(on) VDD = 10 V, ID = 32 A 10 ns tr VGS = 10 V 4.3 ns td(off) RG = 10 Ω 35 ns 9.7 ns Output Capacitance Rise Time Turn-off Delay Time Fall Time tf Total Gate Charge QG VDD = 16 V 22 nC Gate to Source Charge QGS VGS = 10 V 4.3 nC QGD ID = 64 A 5.1 nC VF(S-D) IF = 64 A, VGS = 0 V 1.0 V Reverse Recovery Time trr IF = 64 A, VGS = 0 V 31 ns Reverse Recovery Charge Qrr di/dt = 100 A/µs 23 nC Gate to Drain Charge Body Diode Forward Voltage Note Note Pulsed: PW ≤ 350 µs, Duty Cycle ≤ 2% TEST CIRCUIT 1 SWITCHING TIME TEST CIRCUIT 2 GATE CHARGE D.U.T. D.U.T. VGS RL VGS RG PG. Wave Form VDD 0 VGS 10% PG. 90% τ τ = 1 µs Duty Cycle ≤ 1% 2 90% VDS VDS 0 10% 10% tr td(off) Wave Form td(on) ton RL 50 Ω VDD 90% VDS VGS 0 IG = 2 mA tf toff Data Sheet D15966EJ3V0DS 2SK3638 TYPICAL CHARACTERISTICS (TA = 25°C) TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 120 50 PT - Total Power Dissipation - W dT - Percentage of Rated Power - % DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80 60 40 20 40 30 20 10 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 TC - Case Temperature - °C TC - Case Temperature - °C FORWARD BIAS SAFE OPERATING AREA 1000 PW = 10 µs 100 I D (D C ) 100 µs R D S (on) Lim ited (at V G S = 10 V ) 10 0.1 1 ms DC P ower D issipation Lim ited 1 10 m s T C = 25°C Single pulse 0.1 1 10 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - °C/W ID - Drain Current - A I D (pulse) R th(ch-A) = 125°C/W 100 10 R th(ch-C) = 3.47°C/W 1 0.1 Single pulse 0.01 10 µ 100 µ 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet D15966EJ3V0DS 3 2SK3638 DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE FORWARD TRANSFER CHARACTERISTICS 100 200 ID - Drain Current - A ID - Drain Current - A 250 V GS = 10 V 150 100 4.5 V 50 0.5 1 1.5 2 2.5 1 2 3 4 5 VDS - Drain to Source Voltage - V GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT V DS = 10 V ID = 1 m A 2.5 2 1.5 1 0.5 0 -50 RDS(on) - Drain to Source On-state Resistance - mΩ 0 0 50 100 100 T ch = −55°C 25°C 75°C 150°C 10 1 V DS = 10 V Pulsed 0.1 0.1 150 1 10 100 Tch - Channel Temperature - °C ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 Pulsed 25 20 15 V GS = 4.5 V 10 10 V 5 0 1 10 100 1000 RDS(on) - Drain to Source On-state Resistance - mΩ VGS(off) - Gate Cut-off Voltage - V 0.01 VGS - Gate to Source Voltage - V 3 ID - Drain Current - A 4 0.1 3 | yfs | - Forward Transfer Admittance - S 0 1 V DS = 10 V Pulsed Pulsed 0 T ch = −55°C 25°C 75°C 150°C 10 Data Sheet D15966EJ3V0DS 30 Pulsed 25 20 15 10 ID = 32 A 5 0 0 5 10 15 VGS - Gate to Source Voltage - V 20 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 25 10 00 0 Ciss, Coss, Crss - Capacitance - pF 20 15 V GS = 4.5 V 10 V 10 5 1 00 0 -50 0 50 100 C rs s 10 0 10 0 .01 150 Tch - Channel Temperature - °C SWITCHING CHARACTERISTICS 1 10 100 DYNAMIC INPUT/OUTPUT CHARACTERISTICS 20 VDS - Drain to Source Voltage - V V D D = 10 V V G S = 10 V R G = 10 Ω 100 t d(off) t d(on) 10 tf tr 10 V D D = 16 V 10 V 16 8 12 6 V GS 8 4 4 2 V DS I D = 64 A 0 1 0.1 1 10 0 0 100 5 ID - Drain Current - A 10 20 25 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 trr - Reverse Recovery Time - ns 1000 V G S = 10 V 100 15 QG - Gate Charge - nC SOURCE TO DRAIN DIODE FORWARD VOLTAGE IF - Diode Forward Current - A 0 .1 VDS - Drain to Source Voltage - V 1000 td(on), tr, td(off), tf - Switching Time - ns C is s C oss ID = 32 A Pulsed 0 VGS = 0 V f = 1 MHz VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-state Resistance - mΩ 2SK3638 10 0V 1 0.1 di/dt = 100 A/ µ s V GS = 0 V 100 10 Pulsed 0.01 1 0 0.5 1 1.5 VF(S-D) - Source to Drain Voltage - V Data Sheet D15966EJ3V0DS 0.1 1 10 100 IF - Diode Forward Current - A 5 2SK3638 PACKAGE DRAWING (Unit: mm) TO-252 (MP-3ZK) 2.3±0.1 1.0 TYP. 6.5±0.2 5.1 TYP. 4.3 MIN. 0.5±0.1 No Plating 2 3 0.8 1 1.14 MAX. 0.51 MIN. 4.0 MIN. 6.1±0.2 10.4 MAX. (9.8 TYP.) 4 No Plating 0 to 0.25 0.5±0.1 0.76±0.12 2.3 2.3 1. Gate 2. Drain 3. Source 4. Fin (Drain) 1.0 EQUIVALENT CIRCUIT Drain Body Diode Gate Gate Protection Diode Source Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 6 Data Sheet D15966EJ3V0DS 2SK3638 • The information in this document is current as of January, 2005. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. 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