NTE NTE583

NTE583
Silicon Rectifier Diode
Schottky, RF Switch
Description:
The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and
ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range.
Absolute Maximum Ratings: (TA = +25°C, Limiting Values)
Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V
Forward Continuous Current (Figure 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA
Surge Non–Repetitive Forward Current (tp ≤ 1s, Figure 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . 50mA
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C
Thermal Resistance, Junction–to–Ambient (Figure 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W
Figure 1
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Infinite heat sinks
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Units
Static Characteristics
Breakdown Voltage
V(BR)
IR = 10µA
70
–
–
V
Continuous Forward Voltage
VF(1)
IF = 1mA
–
–
0.41
V
IF = 15mA
–
–
1
V
VR = 50V
–
–
0.2
µA
Continuous Reverse Current
IR(1)
Dynamic Characteristics
Small Signal Capacitance
C
VR = 0, f = 1MHZ
–
–
2
pF
Minority Carrier Life Time
τ
IF = 5mA, Krakauer Method
–
–
100
ps
Note 1. Pulse Test tp ≤ 300µs δ < 2%
1.000
(25.4)
Min
.200
(5.08)
Max
.022 (.509) Dia Max
Color Band Denotes Cathode
.090 (2.28)
Dia Max