NTE583 Silicon Rectifier Diode Schottky, RF Switch Description: The NTE583 is a metal to silicon junction diode featuring high breakdown, low turn–on voltage and ultrafast switching. This device is primarly intented for high level UHF/VHF detection and pulse application with broad dynamic range. Absolute Maximum Ratings: (TA = +25°C, Limiting Values) Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70V Forward Continuous Current (Figure 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15mA Surge Non–Repetitive Forward Current (tp ≤ 1s, Figure 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . 50mA Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +200°C Thermal Resistance, Junction–to–Ambient (Figure 1), RthJA . . . . . . . . . . . . . . . . . . . . . . . . 400°C/W Figure 1 d d ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ * d = 4mm ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ ÇÇÇÇÇÇ Infinite heat sinks Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Units Static Characteristics Breakdown Voltage V(BR) IR = 10µA 70 – – V Continuous Forward Voltage VF(1) IF = 1mA – – 0.41 V IF = 15mA – – 1 V VR = 50V – – 0.2 µA Continuous Reverse Current IR(1) Dynamic Characteristics Small Signal Capacitance C VR = 0, f = 1MHZ – – 2 pF Minority Carrier Life Time τ IF = 5mA, Krakauer Method – – 100 ps Note 1. Pulse Test tp ≤ 300µs δ < 2% 1.000 (25.4) Min .200 (5.08) Max .022 (.509) Dia Max Color Band Denotes Cathode .090 (2.28) Dia Max