R BAT29 SMALL SIGNAL SCHOTTKY DIODES S E M I C O N D U C T O R DO-35 FEATURES Metal-on-silicon junction Low turn-on voltage Ultrafast switching speed 1.083(27.5) MIN JF Primarly intended for high level UHF mixers and ultrafast switching applications The diode is also available in the MiniMELF case with type designation LL29. 0.079(2.0) MAX DIA High temperature soldering guaranteed:260℃/10 seconds at terminals Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 0.150(3.8) MAX MECHANICAL DATA 1.083(27.5) MIN Case: DO-35 glass case 0.020(0.52) MAX DIA Polarity:color band denotes cathode end Weight: Approx. 0.13 gram Dimensions in inches and (millimeters) ABSOLUTE RATINGS(LIMITING VALUES) Symbols Peak Reverse Voltage VRRM IF IFSM TSTG TJ TL Forward Continuous Current Surge non repetitive forward current tp 1s Junction and Storage temperature range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Value Units 5 V mA mA 30 60 -65 to+150 -65 to+150 C 230 C C ELECTRICAL CHARACTERISTICS Symbols Min. Typ. Max. Unis Reverse breakover voltage at IR=100mA VR Leakage current at VR=1V IR 50 Forward voltage drop at IF=10mA Test pulse: tp ≤ 300ms d ＜ 2% VF 0.55 V CJ 1.0 pF RqJA 400 K/W Junction Capacitance at VR=0V ,f=1GHz Thermal resistance JINAN JINGHENG ELECTRONICS CO., LTD. 5 2-14 V nA HTTP://WWW.JINGHENGGROUP.COM RATINGS AND CHARACTERISTIC CURVES BAT29 Figure 1. forward current versus forward voltage (typical values) Figure 2. Capacitance CJ versus reverse applied voltage VR (typical values) IF(mA) 10 CJ(pF) 2 1 Tamb= 25 C 0.8 10 0.6 1 0.4 Tamb=150 C Tamb= 25 C Tamb= -55 C 10 -1 0.2 10 -2 0 0.2 0.4 0.6 0.8 0 1 2 4 6 8 10 VR(V) VF(V) Figure 3.Reverse current versus ambient temperature Figure 4.Reverse current versus continuous Reverse voltage(typical values) IR(mA) IR(mA) 10 10 90% confidence VR=1V 125 C 100 C max. typ. 1 1 75 C 10 -1 10 -2 10 -3 10 -1 10 -2 10 -3 50 C 25 C 0 25 50 75 100 125 0 1 2 3 84 5 VR(V) Tamb=( C) JINAN JINGHENG ELECTRONICS CO., LTD. 2-15 HTTP://WWW.JINGHENGGROUP.COM