BAT 49 ® SMALL SIGNAL SCHOTTKY DIODE DESCRIPTION General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. DO 41 (Glass) ABSOLUTE RATINGS (limiting values) Symbol VRRM Parameter Repetitive Peak Reverse Voltage Value Unit 80 V 500 mA Forward Continuous Current* Ta = 70 °C IFRM Repetitive Peak Forward Current* tp = 1s δ ≤ 0.5 3 A IFSM Surge non Repetitive Forward Current* tp ≤ 10ms 10 A Tstg Tj Storage and Junction Temperature Range - 65 to 150 - 65 to 125 °C °C TL Maximum Lead Temperature for Soldering during 10s at 4mm from Case 230 °C IF THERMAL RESISTANCE Symbol Rth(j-a) Test Conditions Junction-ambient* Value Unit 110 °C/W ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS Symbol Test Conditions Min. Typ. Max. Unit IR * * Tj = 25°C VR = 80V 200 µA VF * * Tj = 25°C IF = 10mA 0.32 V Tj = 25°C IF = 100mA 0.42 Tj = 25°C IF = 1A 1 DYNAMIC CHARACTERISTICS Symbol C Test Conditions Tj = 25°C f = 1MHz Min. Typ. VR = 0V 120 VR = 5V 35 Max. Unit pF * On infinite heatsink with 4mm lead length ** Pulse test: tp ≤ 300µs δ < 2%. August 1999 Ed : 1A 1/4 BAT 49 Figure 1. Forward current versus forward voltage at low level (typical values). Figure 2. Forward current versus forward voltage at high level (typical values). Figure 3. Reverse current versus junction temperature. Figure 4. Reverse current versus VRRM in per cent. 2/4 BAT 49 Figure 5. Capacitance C versus reverse applied voltage VR (typical values). Figure 6. Surge non repetitive forward current for a rectangular pulse with t ≤ 10 ms. Figure 7. Surge non repetitive forward current versus number of cycles. 3/4 BAT 49 PACKAGE MECHANICAL DATA DO 41 Glass DIMENSIONS C O /D A C O /D O / B REF. Millimeters Inches Min. Max. Min. Max. A 4.07 5.20 0.160 0.205 2.71 0.080 0.107 B 2.04 C 28 D 0.712 1.102 0.863 0.028 0.034 Cooling method : by convection and conduction Marking: clear, ring at cathode end. Weight: 0.34g Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics © 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 4/4