NTE NTE703A

NTE703A
Linear Integrated Circuit
RF−IF Amplifier
Description:
The NTE703A is an RF−IF amplifier constructed on a single silicon chip and i intended for use as a
limiting or non−limiting amplifier, harmonic mixer, or oscillator to 150MHz. The low internal feedback
of the device insures a higher stability−limited gain than that available from conventional circuitry. Including the biasing network in the same package reduces the number of external components required, thereby increasing the reliability and versatility of the device.
Absolute Maximum Ratings:
Supply Voltage, V+ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V
Output Collector Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24V
Voltage Between Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±5.0V
Internal Power Dissipation (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW
Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0° to +70°C
Storage Temperature Range , Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65° to +150°C
Lead Temperature (Soldering, 60 seconds), TL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +300°C
Note 1. Rating applies for ambient temperature to +70°C.
Electrical Characteristics: (TA = 25°C, V+ = 12V unless otherwise specified)
Parameter
Test Conditions
Min
Typ
Max
Unit
Supply Current
ein = 0
−
9
14
mA
Power Consumption
ein = 0
−
110
170
mW
Quiescent Output Current
ein = 0
1.5
2.5
3.3
mA
Peak−to−Peak Output Current
ein = 400mVrms, f = 1kHz
3.0
−
−
mA
Output Saturation Voltage
I7 = 2.5mA
−
−
1.7
V
Forward Transadmittance
ein = 10mVrms, f = 1kHz
29
33
−
mmho
Input Conductance
ein < 10mVrms, f = 10.7MHz
−
0.35
1.0
mmho
Input Capacitance
ein < 10mVrms, f = 10.7MHz
−
9
18
pF
Output Capacitance
eo = 100mVrms, f = 10.7MHz
−
2.0
4.0
pF
Output Conductance
eo = 100mVrms, f = 10.7MHz
−
0.03
0.05
mmho
Noise Figure
f = 10.7MHz, RS = 500Ω
−
6
−
dB
f = 100MHz, RS = 500Ω
−
8
−
Pin Connection Diagram
(Top View)
Input Low
N.C.
Out
5
6
4
3 Input High
7
V (+)
GND/Case
8
2
1
Decoupling
N.C.
.370 (9.39) Dia Max
.335 (8.52) Dia Max
.177 (4.5)
Max
.492
(12.5)
Min
.018 (0.45) Dia Typ
3
2
4
1
45°
5
8
7
6
.032 (0.82)
.200 (5.06)
Dia