AGILENT IAM

Silicon Bipolar MMIC 5␣ GHz
Active Double Balanced
Mixer/IF␣ Amp
Technical Data
IAM-81008
Features
• RF-IF Conversion Gain
From 0.05– 5 GHz
• IF Conversion Gain From
DC to 1 GHz
• Low Power Dissipation:
65␣ mW at V CC = 5 V Typical
• Single Polarity Bias Supply:
VCC = 4 to 8 V
• Load-insensitive Performance
• Conversion Gain Flat Over
Temperature
• Low LO Power Requirements:
–5␣ dBm Typical
• Low Cost Plastic Surface
Mount Package
Description
The IAM-81008 is a complete low
power consumption, double
balanced active mixer housed in a
miniature low cost plastic surface
mount package. It is designed for
narrow or wide bandwidth commercial and industrial applications
having RF inputs up to 5 GHz.
Operation at RF and LO frequencies
less than 50 MHz can be achieved
using optional external capacitors
to ground. The IAM-81008 is
particularly well suited for applications that require load-insensitive
conversion and good spurious
signal suppression with minimum
LO and bias power consumption.
Typical applications include
frequency down conversion,
modulation, demodulation and
phase detection. Markets include
fiber-optics, GPS satelite navigation,
mobile radio, and battery powered
communications receivers.
The IAM series of Gilbert multiplierbased frequency converters is
fabricated using HP’s 10␣ GHz, f T,
25␣ GHz f MAX ISOSAT™-I silicon
bipolar process. This process uses
nitride self alignment,
submicrometer lithography, trench
isolation, ion implantation, gold
metallization and polyimide intermetal dielectric and scratch protection to achieve excellent performance, uniformity and reliability.
Plastic SO-8 Package
Pin Configuration
GROUND AND
THERMAL
1
CONTACT
8
VCC1
7
2
GROUND AND
THERMAL
CONTACT
GROUND
3
6
RFOUT AND VCC2
RFIN
4
5
POWER CONTROL
Typical Biasing Configuration and
Functional Block Diagram
Cblock
IF Output
Vee = 0 V
RF Input
1
Cblock
8
2
7
3
6
4
5
Cblock
Optional Low
Frequencies
RF Ground
VCC = 5 V
Optional Low
LO Ground
Cblock
LO Input
Note: No external baluns are required.
7-119
5965-9107E
IAM-81008 Absolute Maximum Ratings
Thermal Resistance:
θjc = 80°C/W
Absolute Maximum[1]
Parameter
Device Voltage
Power Dissipation2,3
RF Input Power
LO Input Power
Junction Temperature
Storage Temperature
10 V
300 mW
+14 dBm
+14 dBm
150°C
–65 to 150°C
Notes:
1. Permanent damage may occur if
any of these limits are exceeded.
2. TCASE = 25°C.
3. Derate at 4.4 mW/°C for TC > 82°C.
IAM-81008 Part Number Ordering Information
Part Number
Devices Per Reel
Reel Size
IAM-81008-TR1
1000
7"
For more information, see “Tape and Reel Packaging for Semmiconductor Devices”.
IAM-81008 Electrical Specifications[1], TA = 25°C
Symbol
Parameters and Test Conditions: Vcc = 5 V, ZO = 50 Ω, LO =–5 dBm, RF = –20 dBm
Units
Min.
Typ.
Max.
dB
6.0
8.5
10
GC
Conversion Gain
RF = 2 GHz, LO = 1.75 GHz
F3 dBRF
RF Bandwidth (GC 3 dB Down)
IF = 250 MHz
GHz
3.5
F3 dB IF
IF Bandwidth (GC 3 dB Down)
LO = 2 GHz
GHz
0.6
P1 dB
IF Output Power at 1 dB Gain Compression
RF = 2 GHz, LO = 1.75 GHz
dBm
–6
IP3
IF Output Third Order Intercept Point
RF = 2 GHz, LO = 1.75 GHz
dBm
3
NF
SSB Noise Figure
RF = 2 GHz, LO = 1.75 GHz
dB
RF Port VSWR
f = 0.05 to 3.5 GHz
1.5:1
VSWR
17
LO Port VSWR
f = 0.05 to 3.5 GHz
2.0:1
IF Port VSWR
f < 1 GHz
1.5:1
RFif
RF Feedthrough at IF Port
RF = 2 GHz, LO = 1.75 GHz
dBc
–25
LOif
LO Leakage at IF Port
LO = 1.75 GHz
dBm
–25
LOrf
LO Leakage at RF Port
LO = 1.75 GHz
dBm
ICC
Supply Current
mA
–30
10
13
16
Note:
1. The recommended operating voltage range for this device is 4 to 8 V. Typical performance as a function of voltage is on
the following page.
7-120
IAM-81008 Typical Performance, TA = 25°C, VCC = 5 V
RF: –20 dBm at 2 GHz, LO: –5 dBm at 1.75 GHz
(unless otherwise noted)
5
10
0
30
15
5
20
10
0
20
GC
GC (dB)
GC
10
–5
5
IF P1 dB (dBm)
5
ICC (mA)
GC (dB)
IF P1 dB (dBm)
ICC
15
ICC (mA)
15
ICC
10
–5
P1 dB
P1 dB
0
0
10
–10
0
2
4
6
8
0
–10
–55
–25
VCC (V)
+25
TEMPERATURE (°C)
Figure 1. Conversion Gain, IF P1 dB
and ICC Current vs. VCC Bias Voltage.
Figure 2. Conversion Gain, IF P1 dB
and ICC Current vs. Case Temperature.
4:1
10
10
RF
LO
IF
IF = 70 MHz
5
8
GC (dB)
VSWR
GC (dB)
3:1
0
0.2
0.5
1.0
2.0
5.0
1:1
0.1
10
RF FREQUENCY (GHz)
0
–15
10
–10
–5
0
5
LO POWER (dBm)
Figure 4. RF, LO and IF Port VSWR
vs. Frequency.
10
Figure 5. RF to IF Conversion Gain
vs. LO Power.
0
RF to IF (dBc)
LO to RF and IF (dBm)
8
6
4
2
–10
RF to IF
LO to IF
LO to RF
HARMONIC LO ORDER
LO = 2 GHz
GC (dB)
1.0
FREQUENCY (GHz)
Figure 3. Typical RF to IF Conversion
Gain vs. RF Frequency, TA = 25°C
(Low Side LO).
–2
0.01
4
2
–5
0
6
2:1
IF = 1 GHz
0.1
5
+125
+85
–20
–30
High Side LO
Low Side LO
0.1
1.0 2.0
FREQUENCY, RF–LO (GHz)
Figure 6. RF to IF Conversion Gain
vs. IF Frequency.
–40
0.1
1.0
10
FREQUENCY (GHz)
Figure 7. RF Feedthrough Relative to
IF Carrier, dBm LO to RF and IF
Leakage vs. Frequency.
7-121
0
—
21
35
74
>75
>75
1
18
0
45
48
>75
>75
2
16
35
42
72
>75
>75
3
42
20
44
59
>75
>75
4
29
44
52
64
>75
>75
5
45
36
57
64
>75
>75
0
1
2
3
4
5
HARMONIC RF ORDER
Xmn = Pif – P(m*rf – n*lo)
Figure 8. Harmonic Intermodulation
Suppression (dB Below Desired Output)
RF at 1 GHz, LO at 0.752 GHz, IF at 0.248 GHz.
Package Dimensions
SO-8 Plastic Package
1.27 (.050)
6x
3.80/4.00
(.1497/.1574)
5.84/6.20
(.230/.244)
M810
0.38 ± 0.10
(.015 ± .004) x 45°
Pin 1
1.35/1.75
(.0532/.0688)
4.72/5.00
(.186/.197)
0°/8°
0.10 (.004)
0.33/0.51
(.013/.020) 8X
0.19/0.25
(.0075/.0098)
0.10/0.25
(.004/.0098)
Note:
1. Dimensions are shown in millimeters (inches).
0.41/1.27
(.016/.050)
7-122